KSH200
Abstract: BUD620 BUD87 MMBT6427 MMBTA13 MMBTA14 MMBTA63 MMBTA64 TD13002 TD13003
Text: Surface Mount Darlington Transistors hFE Part No., Marking Code and Polarity VCEO NPN MMBT6427 TMPT6427 MMBTA13 MMBTA14 - IC MMBTA63 MMBTA64 V (A) 40 40 30 30 30 30 0.5 0.5 0.3 0.3 0.5 0.5 2U 2V V C E(sat) & V B E(sat) @ I C & IB fT @ VCE & IC Package PNP
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Original
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MMBTA63
MMBTA64
MMBT6427
TMPT6427
MMBTA13
MMBTA14
MMBT3640
KSH200
BUD620
BUD87
MMBT6427
MMBTA13
MMBTA14
MMBTA63
MMBTA64
TD13002
TD13003
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PDF
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Hall sensors marking code D
Abstract: 502a hall sensor TRANSISTOR SMD MARKING CODES SMD marking codes Hall sensors 4 Pin SMD Hall sensors SMD codes Hall sensors linear TRANSISTOR SMD MARKING CODE ag SMD Hall sensors code C transistor smd code marking KEY hall 502a
Text: General Literature S p eci a l To p i c s Hall Sensors: Ordering Codes, Packaging, Handling Edition Nov. 9, 2007 GL000002-003EN Hall Sensors: Ordering Codes, Packaging, Handling Copyright, Warranty, and Limitation of Liability The information and data contained in this document are believed to be accurate and reliable.
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Original
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GL000002-003EN
6200-249-1E.
6200-249-2E.
6200-249-3E.
GL000002
002EN.
003EN.
D-79108
D-79008
Hall sensors marking code D
502a hall sensor
TRANSISTOR SMD MARKING CODES
SMD marking codes Hall sensors
4 Pin SMD Hall sensors
SMD codes Hall sensors linear
TRANSISTOR SMD MARKING CODE ag
SMD Hall sensors code C
transistor smd code marking KEY
hall 502a
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PDF
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502a hall sensor
Abstract: hall sensor smd 502A TO-92UA SMD Hall sensors code se micronas ordering codes SMD Hall sensors code C to92ua hal 502a
Text: Hall Sensors: Ordering Codes, Packaging, Handling Edition Sept. 12, 2001 6200-249-2E Hall Sensors: Ordering Codes, Packaging, Handling Contents Page Section Title 3 3 4 4 4 4 5 6 6 7 1. 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 Ordering Codes for Hall Sensors Overview
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Original
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6200-249-2E
502a hall sensor
hall sensor smd 502A
TO-92UA
SMD Hall sensors code se
micronas ordering codes
SMD Hall sensors code C
to92ua
hal 502a
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PDF
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IEC60115-2
Abstract: marking 2u 36 JIS C 0806-1
Text: KMY Last update: 2012.8.30 No.RC-K-HTS-0002-10 Uncontrolled copy Sp e c i f i c a t i o n (Reference) Title: FIXED CONDUCTIVE PATH RESISTORS Style: RC1/2U RoHS COMPLIANCE ITEM Product specification contained in this specification are subject to change at any time without notice
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Original
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RC-K-HTS-0002-10
RC-K-HTS-0002
IEC60115-2
marking 2u 36
JIS C 0806-1
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PDF
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Valere
Abstract: H1250C CA210203104 48v output rectifiers circuit diagrams Valere NIC1000 CA312181178 NIC1000 H2000A 10 amp fuse NIC1001
Text: Naming & Ordering Guide for The Mini 1U Power System Issue Date: January, 2006 Issue 1.7 Supersedes Issue 1.5 12/25/05 Mini Power System Description .- 3 Mini Power System Numbering Convention.- 3 AC Input Types .- 4 Shelf Family Letter Codes.- 4 Mini System Shelf and Distribution Concepts .- 5 DC Distribution Circuits .- 5 H Series Rectifiers Numbering Convention .- 6 H Series Rectifiers Basic Models .- 7 Mini System Alarm and Communication Options .- 8 NIC Network Interface Card .- 8 NIC Naming Convention.- 8 NIC Basic Models.- 8 Sample Operating Parameters.- 9 H-TRIO-02 (Thermal Relay Input/Output) .- 13 HC Display.- 13 Line Cord Naming Convention.- 14 Line Cord Examples .- 14 LI Type.- 15 LU Type .- 15 NEMA Plugs .- 15 Non-Locking Plugs .- 15 Locking Plugs .- 15 Alarm Cables.- 16 Temperature Probes .- 16 Circuit Breaker Naming Convention .- 17 Fuse Naming Convention .- 18 Fuse Examples.- 18 How to Order. 19
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Original
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H-TRIO-02
1-877-Valere1
Valere
H1250C
CA210203104
48v output rectifiers circuit diagrams
Valere NIC1000
CA312181178
NIC1000
H2000A
10 amp fuse
NIC1001
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PDF
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KST63
Abstract: marking 2U 20 diode marking 2U 40 diode marking 2U diode marking codes fairchild KST64 ST64 marking 2U
Text: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage
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Original
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KST63/64
OT-23
KST63
marking 2U 20 diode
marking 2U 40 diode
marking 2U diode
marking codes fairchild
KST64
ST64
marking 2U
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PDF
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dz2j027
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J027 (Tentative) Silicon epitaxial planar type For constant voltage • Absolute Maximum Ratings Ta = 25°C Parameter Package Symbol Rating Unit IFRM 200 mA PT 200 mW Junction temperature
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Original
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2002/95/EC)
DZ2J027
dz2j027
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PDF
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SSMini2-F5-B
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2S027 (Tentative) Silicon epitaxial planar type For constant voltage • Package Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Unit IFRM 200 mA PT 150 mW Junction temperature
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Original
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2002/95/EC)
DZ2S027
SSMini2-F5-B
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PDF
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marking 2u
Abstract: 2U marking code KST63 marking 2U 20 diode marking 2U 40 diode marking 2U diode KST64 ST64 code marking 2U
Text: KST63/64 KST63/64 Darlington Transistor 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage
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Original
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KST63/64
OT-23
marking 2u
2U marking code
KST63
marking 2U 20 diode
marking 2U 40 diode
marking 2U diode
KST64
ST64
code marking 2U
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PDF
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marking 2U 20 diode
Abstract: KST63 2U marking code marking 2U 40 diode marking 2U diode KST64 ST64
Text: KST63/64 KST63/64 Darlington Transistor 3 2 1 SOT-23 1. Base 2. Emitter 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO Collector-Base Voltage Parameter Value -30 Units V VCES VEBO Collector-Emitter Voltage
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Original
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KST63/64
OT-23
marking 2U 20 diode
KST63
2U marking code
marking 2U 40 diode
marking 2U diode
KST64
ST64
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PDF
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sensor u58
Abstract: sensor u57 eeprom 2016 u58 136
Text: 16GB, 32GB x72, ECC, QR x4 240-Pin DDR3L 1.35V 2U LRDIMM Features DDR3L 1.35V SDRAM LRDIMM MT72KHF2G72LZ – 16GB MT72KHF4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM • 240-pin, load-reduced dual in-line, 54.4mm, memory module (2U LRDIMM) • Memory buffer (MB)
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Original
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240-Pin
MT72KHF2G72LZ
MT72KHF4G72LZ
240-pin,
PC3-10600,
PC3-8500,
PC3-6400
09005aef84751df1
khf72c2g
4gx72lz
sensor u58
sensor u57
eeprom 2016
u58 136
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PDF
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Untitled
Abstract: No abstract text available
Text: 16GB, 32GB x72, ECC, QR x4 240-Pin DDR3L 1.35V 2U LRDIMM Features DDR3L 1.35V SDRAM LRDIMM MT72KHF2G72LZ – 16GB MT72KHF4G72LZ – 32GB Features Figure 1: 240-Pin LRDIMM • 240-pin, load-reduced dual in-line, 54.4mm, memory module (2U LRDIMM) • Memory buffer (MB)
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Original
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240-Pin
MT72KHF2G72LZ
MT72KHF4G72LZ
240-pin,
PC3-10600,
PC3-8500,
PC3-6400
09005aef84751df1
khf72c2g
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PDF
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DZ2J027
Abstract: marking 2U 40 diode ZKE00077BED zener 2J
Text: This product complies with the RoHS Directive EU 2002/95/EC . DZ2J027 Silicon epitaxial planar type For constant voltage / waveform clipper and surge absorption circuit Low noise type • Package Features Excellent rising characteristics of zener current Iz
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Original
|
2002/95/EC)
DZ2J027
DZ2J027
marking 2U 40 diode
ZKE00077BED
zener 2J
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PDF
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Untitled
Abstract: No abstract text available
Text: Type 715P Vishay Sprague Polypropylene Film Capacitors ORANGE DROP , Low Loss Polypropylene plastic film is employed as the dielectric in Type 715P ORANGE DROP® capacitors. Type 715P capacitors are ideal for applications where high AC current flow is found,
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Original
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18-Jul-08
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PDF
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CMSH3-40
Abstract: CMPS5064 CMPD1001A marking db6 BCW71 AG marking 1FF MARKING CODE 8Y marking code k9 MARKING CODE 9k 6K MARKING CODE
Text: Marking Codes Marking Code Part Number Marking Code Part Number Marking Code Part Number 02D CMPS5064 5G BC808.40 91E CMPZ4706 1A BC846A 6A BC817.16 91F CMPZ4707 1B BC846B 6B BC817.25 91G CMPZ4708 1E BC847A 6B CMPF5484 91H CMPZ4709 1F BC847B 6B1 CMPF5485 91J
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OCR Scan
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CMPS5064
BC846A
BC846B
BC847A
BC847B
CMPT5551
BC847C
BC848A
BC848B
BC848C
CMSH3-40
CMPD1001A
marking db6
BCW71 AG
marking 1FF
MARKING CODE 8Y
marking code k9
MARKING CODE 9k
6K MARKING CODE
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PDF
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Untitled
Abstract: No abstract text available
Text: ES R o H S fc fiS iS Miniature Slide Switches IP ^0lîÎW /P art Numbering- ES 1 3-^I• Series code 15 A cCurrent tlswSwitching il function $§§&• Number of poles * ? 'S i# 2 5 0 S i : £10 TAB#250 (style : — 1
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OCR Scan
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ES225KI-Z
ES225N1-Z
AC250V
AC1500V
100MQ
ES225P1-Z
100mA)
DC500V)
ES225PB-Z
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PDF
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X16-BIT
Abstract: 64K SRAM
Text: H Y 6 2U F 1 610 1C S eries 64K x16bit full CMOS SRAM DESCRIPTION FEATURES The HY62UF16101C is a high speed, super low power and 1M bit full CMOS SRAM organized as 65,536 words by 16bit. The HY62UF16101C uses high performance full CMOS process technology and designed for high speed low power circuit
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OCR Scan
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HY62UF16101C
x16bit
16bit.
HYUF611CC
100ns
X16-BIT
64K SRAM
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon N Channel MOSFET Triode BF 999 For high-frequency stages up to 300 MHz, preferably in FM applications Type Marking Ordering Code tape and reel PinCtonfigu ation 1 2 3 Package1) BF 999 LB Q62702-F1132 G SOT-23 D S Maximum Ratings Parameter
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OCR Scan
|
Q62702-F1132
OT-23
T073H
400Mh
fl235b05
PlS174fl
fl235bGS
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PDF
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HYUF6406C
Abstract: 6406C
Text: H Y 6 2U F 1 640 6C S eries 256K X16bit full CMOS SRAM DESCRIPTION FEATURES The H Y62UF16406C is a high speed, super low power and 4M bit full CM O S SRAM organized as 256K w ords by 16bits. The HY62UF16406C uses high perform ance full CM OS process technology
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OCR Scan
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X16bit
Y62UF16406C
16bits.
HY62UF16406C
48-ball
HYUF6406C
6406C
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PDF
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60nag
Abstract: No abstract text available
Text: SIPMOS N Channel MOSFET BSP 88 Preliminary Data • SIPMOS - enhancement mode • Drain-source voltage Vfcs = 240V • Continuous drain current I o = 0.29A • Drain-source on-resistance • Total power dissipation flbs on = 8.0Q P0 = 1.5W Type Marking Ordering code for
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OCR Scan
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Q67000-S070
60nag
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PDF
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HYUF6404D
Abstract: HYUF6404
Text: H Y 6 2U F 1 640 4D S eries 2 56K X 16bit full C M O S SRAM Preliminary DESCRIPTION FEATURES The HY62UF16404D is a high speed, super low power and 4Mbit full CMOS SRAM organized as 256K words by 16bits. The HY62UF16404D uses high performance full CMOS process technology
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OCR Scan
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16bit
HY62UF16404D
16bits.
48-ball
HYUF6404D
HYUF6404
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PDF
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Untitled
Abstract: No abstract text available
Text: H Y 6 2U 820 0B Series 256K x8b it CMOS SRAM DESCRIPTION FEATURES Th e H Y 6 2 U 8 2 0 0 B is a high speed, low power and 2 M bit C M O S S R A M organized as 2 6 2 ,1 4 4 words by 8bit. T h e H Y 6 2 U 8 2 0 0 B uses high perform ance C M O S process technology and designed for high
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OCR Scan
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HY62U
8200B
|
PDF
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Untitled
Abstract: No abstract text available
Text: Axial Leaded Capacitors Metallized Polypropylene Dielectric Across-the-Line Capacitors Type AFPX Tape Wrapped with Epoxy Endfill Insulation Resistance Category 600VDC, 275VAC 200,000 MegOhms x jxF MegOhms Maximum Need Not Exceed 1,000,000 Test Voltage 100VDC
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OCR Scan
|
600VDC,
275VAC
100VDC
|
PDF
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Untitled
Abstract: No abstract text available
Text: 100 SERIES 3 ROW RIGHT ANGLE PLUG Dimensions No. of Cnt's P/N FLR X X XX - X XX - XX - X XX Body Style Contact Code -see page F30 H ardware Code see pages F19-F20, F23 Special Variation see page F35 — Polarization see page F23 "A " „QM "C ” "U" "h
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OCR Scan
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F19-F20,
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PDF
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