30 pin simm
Abstract: 30-pin SIMM RAM 30 pin simm memory 256KX8 SIMM 512KX40 1 x 32 72-pin SIMM KMM581020BN 72 simm function KMM5362000 30-pin SIMM
Text: MEMORY ICs FUNCTION GUIDE 2.2 Dynamic RAM Module Based Component Part Number Organization Speed ns Features Packages PCB height(ln) Remark 1M DRAM KMM58256CN 256Kx8 60/70/80 F ast Page S, 30 Pin SIMM 650 Now Base KMM59256CN 256K X 9 70/80 F ast Page S, 30 Pin SIMM
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KMM58256CN
KMM59256CN
KMM532256CV/CVG
KMM536256C/CG
KMM32512CV/CVG
KMM536512C/CG
KMM536512CH
KMM540512C/CG'
KMM540512CM
KMM581000C
30 pin simm
30-pin SIMM RAM
30 pin simm memory
256KX8 SIMM
512KX40
1 x 32 72-pin SIMM
KMM581020BN
72 simm function
KMM5362000
30-pin SIMM
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30-pin simm memory "16m x 8"
Abstract: No abstract text available
Text: STI916100 30-PIN SIMMS 1 6 MX 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI916100 is a 16M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI916100 consist of nine CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
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STI916100
30-PIN
STI916100
24-pin
STI916100-xxT)
STI916100-xxG)
30-pin simm memory "16m x 8"
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30-pin simm memory "16m x 8"
Abstract: 30-pin simm memory 30-pin SIMM RAM
Text: 30-PIN SIMMS STI816100 16M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI816100 is a 16M bit x 8 Dynamic RAM high density memory module. The Simple Technology STI816100 consist of eight CMOS 16M x 1 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A
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STI816100
30-PIN
STI816100
24-pin
STI816100-xxT)
STI816100-xxG)
30-pin simm memory "16m x 8"
30-pin simm memory
30-pin SIMM RAM
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Untitled
Abstract: No abstract text available
Text: STI84000A 30-PIN SIMMS 4M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI84000A is a 4M bii: x 8 Dynamic RAM high density memory module. The Simple Technology STI84000A consist of two CMOS 4M x 4 DRAMs in 24-pin SOJ package mounted on a 30-pin glass epoxy substrate. A 0.1 ^F
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STI84000A
STI84000A-60
STI84000A-70
STI84000A-80
110ns
130ns
150ns
30-PIN
STI84000A
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MCM91000
Abstract: motorola mcm91000s
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 MCM9L1000 1Mx9 Bit Dynamic Random Access Memory Module The MCM 91000 and MCM9L1000 are 9M dynam ic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single-in-line memory m odules (SIMM) or 30-pin single-in-line packages (SIP)
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MCM9L1000
30-lead
30-pin
CM511000A
MCM511000A
9L1000
MCM91000AS70
MCM91000AS00
M91000AS
MCM9L1000AS70
MCM91000
motorola mcm91000s
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MCM91000-70
Abstract: MCM91000SG motorola mcm91000s
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1M x 9 Bit Dynamic Random Access Memory Module MCM91000 MCM9L1000 The MCM91000 and MCM9L1000 are 9M dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead single in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP) consisting of
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MCM91000
MCM9L1000
30-lead
30-pin
MCM511000A
9L1000
MCM91000L70
MCM91000L80
MCM9L1000L70
MCM91000-70
MCM91000SG
motorola mcm91000s
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Untitled
Abstract: No abstract text available
Text: 30-PIN SIMMS STI91000 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000 is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91000 consist of nine CMOS 1M x 1 DRAMs in 20-pin SOJ package
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STI91000
STI91000-60
STI91000-70
STI91000-80
110ns
130ns
150ns
30-PIN
STI91000
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MCM91000SG
Abstract: 91000S-80 91000S-70 91000LH70
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A
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MCM91000
30-lead
30-pin
MCM511000A
91000LH70
91000LH80
91000S70
91000S80
MCM91000SG
91000S-80
91000S-70
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mcm91000as
Abstract: 91000LH70 mcm91000s
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 1M x 9 Bit Dynamic Random Access Memory Module The MCM91000 is a 9M dynamic random access memory DRAM module or ganized as 1,048,576 x 9 bits. The module is a 30-lead single-in-line memory mod ule (SIMM) or 30-pin single-in-line package (SIP) consisting of nine MCM511000A
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MCM91000
30-lead
30-pin
MCM511000A
91000LH70
91000LH80
91000S70
91000S80
mcm91000as
mcm91000s
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30-pin SIMM RAM
Abstract: No abstract text available
Text: STI94000 30-PIN SIMMS 4M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI94000 is a 4M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI94000 consist of nine CMOS 4 M x 1 DRAMs in 20-pin SOJ package
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STI94000
30-PIN
110ns
130ns
150ns
STI94000
20-pin
30-pin SIMM RAM
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KMM591000C8
Abstract: KMM591000C KMM591000C7 KMM591000C-7
Text: KMM591000C DRAM MODULES 1 M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM591000C is a 1M b itx 9 Dynamic RAM high density memory module. The Samsung KMM591000C consist of nine KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM591000C
110ns
130ns
150ns
KMM591000C
KM41C1000C
20-pin
30-pin
KMM591000C8
KMM591000C7
KMM591000C-7
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Untitled
Abstract: No abstract text available
Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM594000A
130ns
150ns
180ns
KMM594000A
30-pin
KM41C4000AJ
20-pin
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Samsung Capacitor sms
Abstract: km41c4000aj KM41C4000A
Text: D3AM MODULES KMM59400QA 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KMM594000A consist of nine KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM59400QA
KMM594000A
KM41C4000AJ
20-pin
30-pin
KMM594000A-
Samsung Capacitor sms
KM41C4000A
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KMM584000A
Abstract: km41c4000aj
Text: KMM584000A DRAM MODULES 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KMM584000A consist of eight KM41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
KMM584000A
KM41C4000AJ
20-pin
30-pin
KMM584000A-
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
84000A-
84000A-10
100ns
130ns
150ns
180ns
84000A
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SS1000
Abstract: KMM581000B
Text: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM581000B
581000B
KMM581OOOB
KM41C1OOOBJ
20-pin
30-pin
581000B-
KMM581
SS1000
KMM581000B
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mcm91000s
Abstract: motorola 30-pin simm memory dynamic mcm511000 MCM91000L MCM91000-80 simm 30-pin 9-bit MCM91000
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM91000 Product Preview 1 M x 9 Bit Dynam ic Random Access M em ory M odule The MCM91000L and MCM91000S are 9M , dynamic random access memory DRAM modules organized as 1,048,576 x 9 bits. The modules are 30-lead singlein-line memory modules (SIMM) or 30*pin single-in-line packages (SIP) consist
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MCM91000
MCM91000L
MCM91000S
30-lead
MCM511000
MCM91000S
MCM91000L
motorola 30-pin simm memory dynamic
MCM91000-80
simm 30-pin 9-bit
MCM91000
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MCM81000AS10
Abstract: motorola 30-pin simm memory dynamic mcm81000s
Text: M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA 1Mx8 Bit Dynamic Random Access Module MCM81000 MCM8L1000 The MCM81000 and M CM8L1000 are 8M dynamic random access memory DRAM modules organized as 1,048,576 x 8 bils. The modules are 30-lead single-in-line memory modules (SIMM) or 30-pin single-in-line packages (SIP)
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MCM81000
CM8L1000
30-lead
30-pin
CM5110OOA
MCM511000A
8L1000
MCM81000AS70
MCM81000AS80
MCM81000AS10
motorola 30-pin simm memory dynamic
mcm81000s
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KMM584000
Abstract: KM41C4000J
Text: KM M584000 DRAM MODULES 4 M x 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM584000 is a 4M b itx 8 Dynamic RAM high density memory module. The Samsung KMM584000 consist of eight KM41C4000J DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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M584000
KMM584000-8
KMM584000-10
100ns
150ns
180ns
KMM584000
KM41C4000J
20-pin
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dram simm memory module samsung 30-pin 16M
Abstract: No abstract text available
Text: KMM5916100/T DRAM MODULES 16Mx9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59161QG/T is a 16M bit x 9 Dynamic RAM high density memory module. The Samsung «1^5916100^ consist of nine KM41C16100/T DRAMs in 24-pin SOJ/TSOP II packages mounted on a 30-pin
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KMM5916100/T
16Mx9
KMM59161QG/T
KM41C16100/T
24-pin
30-pin
KMM5916100/T
KMM5916100-6
KMM5916100-7
dram simm memory module samsung 30-pin 16M
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333z
Abstract: 333z capacitor 00A80
Text: STI91OOOA 30-PIN SIMMS 1M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI91000A is a 1M bit x 9 Dynamic RAM high density memory module. The Simple Technology STI91 OOOA consist of two CMOS 1M x 4 DRAMs in 20-pin SOJ package and one CMOS 1M x 1 DRAM in 20-pin SOJ package
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STI91OOOA
STI91000A-60
STI91000A-70
STI91000A-80
110ns
130ns
150ns
30-PIN
STI91000A
STI91
333z
333z capacitor
00A80
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594000A
Abstract: No abstract text available
Text: KMM594000A DRAM MODULES 4 M X 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 594000A is a 4M bit X 9 Dynamic RAM high density memory module. The Samsung KM M 594000A consist of nine KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM594000A
94000A
41C4000AJ
20-pin
30-pin
94000A-
594000A
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Untitled
Abstract: No abstract text available
Text: DRAM MODULES KMM584000A 4 M X 8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 584000A is a 4M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 584000A consist of eight KM 41C4000AJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM584000A
84000A
41C4000AJ
20-pin
30-pin
130ns
84000A-
150ns
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Untitled
Abstract: No abstract text available
Text: STI94000A 30-PIN SIM M S 4M X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology ST I94000A is a 4 M bil x 9 Dynamic R A M high density memory module. The Simple Technology STI94000A consist of two C M O S 4M x 4 D R A M s in 20-pin S O J
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STI94000A
30-PIN
STI94000A-60
STI94000A-70
STI94000A-80
110ns
130ns
150ns
I94000A
STI94000A
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