KMM581000An-8
Abstract: No abstract text available
Text: DRAM MODULES KMM581000AN 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KM M 581000A N consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
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KMM581000AN
581000AN
81000A
44C1000AJ
20-pin
30-pin
130ns
581000AN-
150ns
KMM581000An-8
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41C16000
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC L.7 E D • KMM5Ô16000/T 7 «it.4 m S 001522^ 32S » S M 6K DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5816000/T is a 16M b itx 8 Dynamic RAM high density memory module. The Samsung
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16000/T
16Mx8
KMM5816000/T
5816000/T
41C16000/T
24-pin
30-pin
KMM5816000-6
110ns
KMM5816000-7
41C16000
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KMM581000N8
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC M2E D H KMM581000N 7=^4142 0Q10434 b DRAM MODULES 1M x8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N Is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs
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KMM581000N
0Q10434
KMM581000N
KM44C1000J-1M
20-pin
30-pin
KMM581000N-8
150ns
KMM581000N-10
KMM581000N8
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC bME » • 7Tfcj4142 D 0 1 4 4 4 4 50b ■ SÎ1G K KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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7Tfcj4142
KMM581000AN
581000AN
81000A
KM44C1OOOAJ
20-pin
30-pin
581000AN-
130ns
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Untitled
Abstract: No abstract text available
Text: SAM S UN G E L E C T R O N I C S INC b4E » • 7^4142 KMM581020AN GG14454 455 ■ SM6K DRAM MODULES 1 M x 8 DRAM SIMM Memory Module with Low Power GENERAL DESCRIPTION FEATURES • Performance range: KMM581020AN-7 • • • » • • • tiuc tcAc I rc
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KMM581020AN
GG14454
KMM581020AN-7
130ns
KMM581020AN-8
150ns
KMM581020AN-10
100ns
180ns
cycles/128ms
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KMM581000N8
Abstract: No abstract text available
Text: KMM581000N DRAM MODULES 1 M x 8 D R A M S IM M M em ory M odule FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000N is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000N c o n s is t o f tw o 4M b it DRAMs KM44C1000J-1M x 4 in 20-pin SOJ package mounted
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KMM581000N
150ns
180ns
KMM581000N
KM44C1000J-1M
20-pin
30-pin
22/iF
KMM581000N8
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LN65V
Abstract: No abstract text available
Text: DRAM MODULES KMM581020AN 1 M x 8 DRAM SIMM Memory Module with Low Power FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581020AN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581020AN co n sist o f tw o 4M b it DRAMs
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KMM581020AN
KMM581020AN
KM44C1020ALJ
20-pin
30-pin
22/iF
KMM581020AN-7
LN65V
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Untitled
Abstract: No abstract text available
Text: KMM581000C DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung KMM581000C consist of eight KM41C1000C DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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KMM581000C
KMM581000C-6
KMM581000C-7
KMM581000C-8
110ns
130ns
150ns
KMM581000C
KM41C1000C
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5816000A/AT Fast Page Mode / 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package / GENERAL DESCRIPTION FEATURES The Samsung KMM5816000A is a 16M bit x 8 Dynamic RAM high density memory module. The Samsung KMM5816000A consists of eight CMOS
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KMM5816000A/AT
16Mx8
KMM5816000A
16Mx1bit
24-pin
30-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte KMM5816000A/AT Fast Page Mode 16Mx8 DRAM SIM M , 4K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5816000A is a 16M bit x 8 Dynamic RAM high density memory module The • Performance Range.
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KMM5816000A/AT
16Mx8
KMM5816000A
24-pin
30-pin
KMM5016OOOA
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"30 pin simm"
Abstract: 30-pin simm memory "16m x 8" KM68512 256K x 8 SRAM dip 30-pin SIMM RAM 30-pin SIMM 30 pin simm
Text: FUNCTION GUIDE MEMORY ICs 2.2 Dynamic RAM Module Continued Based Component 16M DRAM Base 2.3 Part Number Organization KMM53281OOV/VG/VP KMM5368100G KMM5368000H/HG KMM5368100H/HG KMM5816000T KMM5816100T KMM5916000T KMM5916100T 8Mx32 8M x 36 8Mx36 8M X 36
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KMM53281OOV/VG/VP
KMM5368100G
KMM5368000H/HG
KMM5368100H/HG
KMM5816000T
KMM5816100T
KMM5916000T
KMM5916100T
8Mx32
8Mx36
"30 pin simm"
30-pin simm memory "16m x 8"
KM68512
256K x 8 SRAM dip
30-pin SIMM RAM
30-pin SIMM
30 pin simm
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S INC b?E ]> • 7 RbM lM2 0 0 1 S 224 KMM5816100/T 343 I SM6 K DRAM MODULES 16 M x8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION * Performance range: The Samsung KMM5816100/T is a 16M bitx8 Dynamic RAM high density memory module. The Samsung
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KMM5816100/T
KMM5816100/T
KM41C16000/T
24-pin
30-pin
KMM5816100-6
110ns
KMM5816100-7
130ns
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Untitled
Abstract: No abstract text available
Text: SAMSUNG E L E C T R O N I C S INC b?E D • KMM581000C 001 S 02 M Tfll S N G IC DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000C is a 1M b it x 8 Dynamic RAM high density memory module The Samsung
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KMM581000C
KMM581000C
KM41C1000C
20-pin
30-pin
110ns
KMM581000C-7
130ns
KMM581000C-8
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC m 42E D 7^4142 KMM581000B GGlüMlö ñ «SPICK DRAM MODULES i'T 'Q U ^ n 1MX8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B Is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung
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KMM581000B
581000B
KMM581
KM41C1OOOBJ
20-pln
30-pin
581000B-
130ns
150ns
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KMM581000AN
Abstract: 581000A KMM581000A
Text: DRAM MODULES KMM581000AN 1M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: KMM581 OOOAN- 7 • • • • • • • tR A C tC A C tR C 70ns 20ns 130ns KMM581 OOOAN- 8 80ns 20ns 150ns KMM581 OOOAN-10 100ns 25ns 180ns Fast Page Mode operation
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KMM581000AN
KMM581
OOOAN-10
100ns
130ns
150ns
180ns
581000AN
KMM581000AN
581000A
KMM581000A
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KMM581000BN-6
Abstract: ic sc 4145 KM44C1000BJ KMM581000BN
Text: SAMSUNG EL E C T R O N I C S INC b?E D • 7Tbm4E KMM581000BN DQ15ü7b 3ÖT M S I I G K DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M b it x 8 Dynamic RAM high density memory module. The Samsung
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KMM581000BN
KMM581000BN-6
KMM581000BN-7
KMM581000BN-8
110ns
130ns
150ns
KMM581000BN
KM44C1000BJ
ic sc 4145
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Untitled
Abstract: No abstract text available
Text: KMM5816000/T DRAM MODULES 16Mx8 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION The S am sung KMM5816000/T is a 16M bit x 8 D ynam ic RAM high d e nsity m em ory m odule. The S am sung KMM5816000/T con sist o f eight KM41C16000H' DRAMs in 24-pin SOJ/TSOP II package m o unte d on a 30-pin
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KMM5816000/T
16Mx8
KMM5816000-6
KMM5816000-7
KMM5816000-8
KMM5816000/T
KM41C16000H'
24-pin
30-pin
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KMM581000A
Abstract: KM41C1000AJ KMM481000A-8
Text: KMM481000A/KMM581000A MEMORY MODULES 1 M x 8 Bit DRAM SIP and SIMM Memory Modules FEATURES GENERAL DESCRIPTION • 1,048,576 x 8-bit Organization • Performance range: The Samsung KMM481000A and KMM581000A are 1 M x 8 dynamic RAM high density memory modules.
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KMM481000A/KMM581000A
KMM481000A-8
KMM581000A-8
KMM481000A-10
KMM581000A-10
150ns
180ns
180ns
KMM481000A
KMM581000A
KM41C1000AJ
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km44c1000aj
Abstract: KMM581000AN
Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000AN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM 44C1000AJ - 1 M X 4 in 20-pin SOJ package
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OCR Scan
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KMM581000AN
581000AN
KMM581
44C1000AJ
20-pin
30-pin
KMM581OOOAN
km44c1000aj
KMM581000AN
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km44c1000aj
Abstract: 581000A
Text: KMM581000AN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581OOOAN is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581 OOOAN consist of two 4M bit DRAMs KM44C1000AJ - 1MX4 in 20-pin SOJ package
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OCR Scan
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KMM581000AN
130ns
150ns
180ns
KMM581
30-pin
KMM581OOOAN
KM44C1000AJ
20-pin
581000A
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64 mega bit ram simm
Abstract: No abstract text available
Text: DRAM MODULE 16 Mega Byte Preliminary KMM5816000AK Fast Page Mode 16Mx8 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package GENERAL DESCRIPTION The Sam sung KM M 5816000AK is a 16M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The
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KMM5816000AK
16Mx8
5816000AK
16Mx1
24-pin
816000A
KMM5016OOOAK
KMM5016QOOAK
64 mega bit ram simm
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KMM581000BN
Abstract: KMM581000BN-7 KM44C1000BJ KMM581000BN-6 KMM581000
Text: KMM581000BN DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM581000BN is a 1M bit x 8 Dynamic RAM high density memory module. The Samsung KMM581000BN co n sist o f two 4M b it DRAMs KM44C1000BJ 1 M x4 in 20-pin SOJ package mount
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OCR Scan
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KMM581000BN
KMM581000BN
KM44C1000BJ
20-pin
30-pin
22juF
KMM581000BN-6
KMM581000BN-7
KMM581000
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SS1000
Abstract: KMM581000B
Text: KMM581000B DRAM MODULES 1 M X 8 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 581000B is a 1M bit X 8 Dynamic RAM high density memory module. The Samsung KMM581OOOB consist of eight KM41C1OOOBJ DRAMs in 20-pin SOJ package mounted on a 30-pin glass-epoxy
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OCR Scan
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KMM581000B
581000B
KMM581OOOB
KM41C1OOOBJ
20-pin
30-pin
581000B-
KMM581
SS1000
KMM581000B
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44C10
Abstract: No abstract text available
Text: DRAM MODULE 1 Mega Byte KMM581000CN Fast Page Mode 1Mx8 DRAM SIM M , 1K Refresh , 5V G EN E R A L DES C R IPTIO N The Sam sung K M M 581000C N is a 1M bit x 8 FEATURES • Performance Range: D ynam ic RAM high density m em ory module. The S am sung KM M 581000C N consists of tw o CMOS
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KMM581000CN
581000C
20-pin
130ns
150ns
44C10
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