DN2620
Abstract: No abstract text available
Text: DN2620 DN2624 Advanced Information N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Num ber / Package BV dsx / B^DGX ^DS ON Idss (max) (min) TO-92 DICE 200V 4.0Q 600mA DN2620N3 DN2620ND 240V 4.0Q 600mA DN2624N3 DN2624ND Advanced DMOS Technology
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DN2620
DN2624
600mA
600mA
DN2620N3
DN2624N3
DN2620ND
DN2624ND
300mA,
300jxs
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VN2780
Abstract: No abstract text available
Text: VN2780 Advanced Information N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVdss / ^D S O N ^D(ON) b v dgs (max) (min) SO-8 Dice 800V 16Q 500mA VN2780LG VN2780ND Features Advanced DMOS Technology □ Free from secondary breakdown
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VN2780
VN2780LG
500mA
VN2780ND
500mA,
500mA
300jxs
VN2780
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Untitled
Abstract: No abstract text available
Text: LP0801 h m . _ Low ThreshoJ P relim ina ry P-Channel Enhancement-Mode Lateral MOSFET Ordering Information BV DSS / BV DGS -16.5V D max (min) V GS(th) (max) 12.0Q -20 0m A -1.0V DS(ON) ^D(ON) Order Number / Package TO-236AB*
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LP0801
O-236AB*
LP0801K1
0801N
-150m
-100m
-200m
300jxs
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Untitled
Abstract: No abstract text available
Text: VN0300 N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v dss/ ^DS ON I d (ON) BVdgs (max) (min) TO-39 TO-92 30V 1 .2 0 . 1.0A V N 0 30 0B V N 0 30 0L Advanced DMOS Technology High Reliability Devices See pages 5 -4 and 5-5 fo r M ILIT A R Y S T A N D A R D P rocess Flows
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VN0300
300jxs
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11n50
Abstract: No abstract text available
Text: PRELIMINARY 15R6CT/3 SOLID STATE DEVICES, INC 14849 Firestone Boulevard - La Mirada,CA 90638 Phone: 714 670-SSDI (7734) Fax: (714) 522-7424 A ^ Designer’s Data Sheet FEATURES: tmr High Voltage Schottky Process Minimal recovery time and leakage increase over
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670-SSDI
15R6CT/3
50nsec
500mA,
250mA,
11n50
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Ztx458
Abstract: No abstract text available
Text: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSU E 2 - MARCH 1994_ FEATURES * 400 Volt VCE0 * 0.5 Am p continuous current * 1 Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage
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cH7Q57Ã
001G35S
Ztx458
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MB437
Abstract: No abstract text available
Text: NEW PRODUCT NEW PRODUCT NEW PRODUCT SBLB25L20CT THRU SBLB25L30CT SCHOTTKY RECTIFIER Reverse Voltage - 20 and 25 Volts Forward Current - 25,0 Amperes FEATURES TO-263AB Plastic package has Underwriters Laboratory Flammability Classification 94V-0 Metal silicon junction, majority carrier conduction
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SBLB25L20CT
SBLB25L30CT
O-263AB
MB437
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Untitled
Abstract: No abstract text available
Text: 6KA24 TRANSIENT SUPPRESSOR PREMIUM AUTOMOTIVE TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 24 Volts Peak Pulse Power - 6000 Watts FEATURES ♦ Designed for under the hood applications ♦ Plastic package has Underwriters Laboratories Flammability Classification 94V-0
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6KA24
is/50ms
10/1000H8OC.
100ps
10Oms
10fisec.
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K1001
Abstract: 654V k1001 transistor
Text: r=7 SGS-THOMSON m 7M [^D l]©llLl©Tri©K1001_ MJE802 SILICON NPN POWER DARLINGTON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN DARLINGTON APPLICATIONS . GENERAL PURPOSE SWITCHING DESCRIPTION The MJE802 is a silicon epitaxial-base NPN transistor in monolithic Darlington configuration
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K1001_
MJE802
MJE802
OT-32
300jxs,
K1001
654V
k1001 transistor
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ZTX1051A
Abstract: transistor 3342
Text: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ZTX1051A ISSUE 2 -JANUARY 95. " ABSOLUTE MAXIMUM RATINGS. PARAM ETER SYM BOL ZTX1051A UNIT Collector-Base Voltage VCBO 150 V Collector-Em itter Voltage VCEO 40 V Em itter-Base Voltage VEBO
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ZTX1051A
ZTX1051A
100nA
Vcb-120V
lB-10mA*
lB-100mA*
lc-10mA,
f-100MHz
transistor 3342
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NTC2335
Abstract: NTC23
Text: SEC SILICON POWER TRANSISTOR ELECTRON DEVICE NTC2335 HIGH S P E E D HIGH C U R R E N T SW IT C H IN G NPN S IL IC O N T R IP L E D IFF U S E D T R A N S IS T O R Industrial Use DESCRIPTION Suitable for switching regulator, DC-DC converter and ultrasonic appliance applications.
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NTC2335
NTC2335
NTC23
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Untitled
Abstract: No abstract text available
Text: _| _ Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CUlOQIC c o r p o r a t io n ^ 3N161 ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified FEATURES • Channel Cut Off W ith Zero Gate Voltage • Square-Law Transfer Characteristic Reduces Distortion
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3N161
300jxs;
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Untitled
Abstract: No abstract text available
Text: TN0635 TN0640 Supertexinc. Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BV Dss / R dS ON •d (ON) V GS(th) b v dgs (max) (min) (max) TO-92 Diet 350V ion -ion 1.0A 1.8V TN0635N3 TN0635ND 1.0A 1.8V
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TN0635
TN0640
TN0635N3
TN0640N3
TN0635ND
TN0640ND
TN0635/TN0640
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p023 diode
Abstract: No abstract text available
Text: DN2530 Prelim inary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d sx/ ^DS ON Id s s B^ dgx (max) (min) TO-92 TO-243AA* DIE 300V 12Q 200mA DN2530N3 DN2530N8 DN2530ND * Sam e as SOT-89. For carrier tape reels sp ecify P023 fo r 1,000 units o r P024 fo r 2,000 units.
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DN2530
DN2530N3
200mA
O-243AA*
DN2530N8
DN2530ND
OT-89.
150mA
150mA
150mA,
p023 diode
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D240C
Abstract: No abstract text available
Text: KM29N16000T/R FLASH MEMORY 2M x 8 Bit NAND Flash Memory FEATURES GENERAL DESCRIPTION • Single 5.0 - volt Supply • Organization - Memory Celi Array : 2M +64K x 8 bit - Data Register : (256 + 8) x 8 bit • Automatic Program and Erase - Page Program : (256 + 8)Byte
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KM29N16000T/R
D240C
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Untitled
Abstract: No abstract text available
Text: SBLF1630CT AND SBLF1640CT SCHOTTKY RECTIFIER VOLTA GE RANGE 30 and 40 Volts CURRENT -16.0 Amperes - FEATURES Isolated Plastic Package has Underwriters Flammability Classification 94V-0 Isolated overmolded package ige Metal to silicon rectifier, majority carrier con
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SBLF1630CT
SBLF1640CT
IT0-22QCT
300jxs
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IRF 544 N MOSFET
Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511
Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no
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VN1304N2
Abstract: VN1306N2 VN1310N3
Text: ^ VN1304 ¿¿rsiLi N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R d S ON I d (ON) Order Number / Package BVdgs (max) (min) TO-243AA* TO-39 TO-92 40V 8Q 0.5A
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VN1304
O-243AA*
VN1310N8
VN1304N2
VN1306N2
VN1310N2
VN1304N3
VN1306N3
VN1310N3
VN1304/VN1306/VN1310
VN1310N3
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N-Channel Depletion-Mode MOSFET
Abstract: No abstract text available
Text: LND250 P relim ina ry N-Channel Depletion-Mode MOSFET Ordering Information Order Num ber / Package Product marking for SOT-23: min TO-236AB* NDE* 1.0mA LND250K1 where * = 2-week alpha date code BVd s x / ^DS(ON) Idss B V dgx (max) 500V 1.0KQ *S am e as SO T-23. All units shipped on 3,000 piece carrier tape reels.
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LND250
O-236AB*
LND250K1
OT-23:
300jxs
N-Channel Depletion-Mode MOSFET
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DN2635
Abstract: No abstract text available
Text: DN2635 DN2640 Prelim inary N-Channel Depletion-Mode Vertical DMOS FETs Orderina Informât on Order Number / Package b v d sx/ ^DS ON Id ss B^ dgx (max) (min) TO-92 DIE 350V 6.0Q 300mA DN2635N3 DN2635ND 400V 6.0Q 300mA DN2640N3 DN2640ND Features Advanced DMOS Technology
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DN2635
DN2640
DN2635N3
DN2640N3
300mA
300mA
DN2635ND
DN2640ND
150mA
150mA
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Untitled
Abstract: No abstract text available
Text: VN2222LL N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package b v d ss/ ^D S O N ^D(ON) b v dgs (max) (min) TO-92 60V 7.5Q 0.75A VN2222LL Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement
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VN2222LL
300jxs
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MOSFET 4407 a
Abstract: MOSFET 4407 4406 mosfet 4407 mosfet mosfet 4407 8pin TC4407 c4407 4407E 4407M TC4406
Text: leluom Semiconductor, Inc. TC4406 TC4407 3A DUAL OPEN-DRAIN MOSFET DRIVERS FEATURES GENERAL DESCRIPTION • ■ ■ ■ ■ The T C 4406 and T C 4407 are CM O S buffer-drivers constructed with com plem entary M OS outputs, w here the drains of the totem -pole output have been left separated so
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TC4406
TC4407
V-18V)
TC4406
TC4407
MOSFET 4407 a
MOSFET 4407
4406 mosfet
4407 mosfet
mosfet 4407 8pin
c4407
4407E
4407M
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Untitled
Abstract: No abstract text available
Text: SOT223 NPN SILICON PLANAR SWITCHING TRANSISTOR FZT2222A ISSUE 3 - OCTOBER 1995_ FEATURES * 40 Volt VCE0 * Fast switching COMPLEMENTARY TYPE • PARTMARKtNG DETAIL - FZT2907A FZT2222A ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage
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OT223
FZT2222A
FZT2907A
-55to
140KHz
150mA,
150mA
200ns
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marking BSs sot23 siemens n-channel
Abstract: VN2110N3 marking BSs sot23 siemens
Text: U ,1 VN2106 VN2110 r* N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information b v dss/ R dS ON BVdgs (max) 60V 100V Order Number / Package 4Q 4Q TO-92 20 Terminal Ceramic LCC Diet TO-236AB* Product marking for SOT-23: VN2106N3 VN2106NF VN2106ND
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VN2106
VN2110
VN2106N3
VN2110N3
VN2106NF
VN2110NF
VN2106ND
VN2110ND
O-236AB*
VN2110K1
marking BSs sot23 siemens n-channel
VN2110N3
marking BSs sot23 siemens
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