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    3030BG Search Results

    3030BG Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    UPD70F3030BGF-3BA-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), , / Visit Renesas Electronics Corporation
    UPD70F3030BGC-8EU-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
    UPD703030BGF-XXX-3BA Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), QFP, / Visit Renesas Electronics Corporation
    UPD703030BGC-XXX-8EU Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion), LQFP, / Visit Renesas Electronics Corporation
    UPD703030BGC-8EU-A Renesas Electronics Corporation 32-bit Microcontrollers (Non Promotion) Visit Renesas Electronics Corporation
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    3030BG Price and Stock

    Renesas Electronics Corporation UPD70F3030BGC-8EU-A

    IC MCU 32BIT 256KB FLSH 100LFQFP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey UPD70F3030BGC-8EU-A Reel
    • 1 -
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    • 100 -
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    • 10000 -
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    Vishay Intertechnologies P-0402E3030BGWI

    P-0402 25PPM 303 0.1% G WI e4 - Bulk (Alt: P-0402E3030BGWI)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas P-0402E3030BGWI Bulk 19 Weeks 100
    • 1 -
    • 10 -
    • 100 $4.4196
    • 1000 $1.0234
    • 10000 $1.0234
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    3030BG Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    VTE3175L

    Abstract: VTE3176L
    Text: SbE D m 3030bG^ 0DD1EE1 GaAIAs Infrared Emitting Diodes VTE3175L, 3176L Coax Package w/ Cathode Lead — 880 nm 8. E G bb^ H V C T _ G VACTEC T ~ 4 \ “ J3 PACKAGE DIMENSIONS inch mm DESCRIPTION CASES COAX HERMETIC (WITH CASE LEAD) CHIP SIZE: .011 ’ *.011"


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    3030bG^ VTE3175L, 3176L VTT312xE VTE3175L VTE3176L VTE3175L VTE3176L PDF

    IC 7405

    Abstract: FFD-100 FFD-040
    Text: E G & G JUDSON 27E D • 3030bG5 ODOOlâT G ■ T"4/-'5/ F Series FFD-040;FFD-100;FFD-200 _ Features • • • • Low Operating Voltage High Responsivity Ultra-Fast Rise and FallTime Isolated Photodiode Chip • • • Large ActiveArea Wide Spectral Range


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    3030bG5 FFD-040 FFD-100 FFD-200) FFD-200 10-1S 3030bDS IC 7405 PDF

    NEP 250

    Abstract: photodiode "interference filter" photodiode interference filter SALEM 15-V 5006 OPTICAL
    Text: G E & G JUDSON 27E D • 3030bGS QQQQ1ÔS 3 ■ DFA Series DFA-XXXX1 _ Features • • Built-in Low Noise Amplifier Large Active Area • Groundable Case • Built-in Interference Filter • Shielded Amplifier • Wide Spectral Range Operating Data and Specifications at 23°C


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    3030LGS NEP 250 photodiode "interference filter" photodiode interference filter SALEM 15-V 5006 OPTICAL PDF

    Untitled

    Abstract: No abstract text available
    Text: DUAL E LE M E N T P H O T O C O N D U C T IV E C E L L VT300C T Series PACKAGE D IM EN SIO N S inch mm .355 (9.02) .016(0.41) .365 (9.27) .019(0.48) DIA. 1 .320 (8.13) =#= .330 (8.38) t .035 (0.89) - * .250 (6.35) .050 (1.27) .172 (4.37) 1.00(25.4) .202 (5.13)


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    VT300C R10/R100) VT30CT VT33CT 3030bG PDF

    J16-18A-R01M-SC

    Abstract: J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent
    Text: Germanium Detector Operating Notes 0.8 to 1.8 ¡im General Responsivity Operating Circuit J1 6 S eries d etectors are hig h -q u ality G erm an iu m photodiodes designed for th e 800 to 1800 n m w avelen g th range. T he eq u iv alen t circu it for a G erm a­


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    J16TE 303Gb05 J16-18A-R01M-SC J16-8SP-R05M J16-5SP-R02M-HS J16-5SP-R02M-SC photodiode ge J16-18A-R01M photodiode germanium J16-18A-R01M-HS J16-5SP-R03M-HS germanium diode equivalent PDF

    UV-040BG

    Abstract: UV-444BQ uv photodiode UV-444BQ UV-215BG CI 7405 UV-100BG UV-250BQ UV100BG UV-100BQ UV-250BG
    Text: E G & G JUDSON 27E D • 3030tiQS Q 00G lb 3 4 ■ UV Series Features • • • • • Planar Diffused Structure Oxide Passivated Wide Spectral Range Flat Noise Spectrum to DC • • Linearity Over W ide Dynamic Range Peak Responsivity: 0.62 A /W at 900 Nanometers


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    00001h3 t-41-51 UV-040BG UV-040BQ UV-100BG UV-100BQ UV-215BG UV-215BQ UV-250BG UV-250BQ UV-444BQ uv photodiode UV-444BQ CI 7405 UV-250BQ UV100BG UV-100BQ PDF