30N12 Search Results

30N12 Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TRS30N120HB		Toshiba Electronic Devices & Storage Corporation	SiC Schottky Barrier Diode (SBD), 1200 V, 30 A, 2 in 1, TO-247
TW030N120C		Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET, 1200 V, 60 A, 0.04 Ω@18 V, TO-247

30N12 Price and Stock

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Infineon Technologies AG IPT030N12N3GATMA1 TRENCH >=100V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPT030N12N3GATMA1	Digi-Reel	5,635		1	1 $5.78 10 $4.165 100 $5.78 1000 $2.7082 10000 $2.7082	Buy Now
	IPT030N12N3GATMA1	Cut Tape	5,635		1	1 $5.78 10 $4.165 100 $5.78 1000 $2.7082 10000 $2.7082	Buy Now
	IPT030N12N3GATMA1	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $2.543	Buy Now
Mouser Electronics	IPT030N12N3GATMA1		2,905			1 $5.39 10 $4.15 100 $3.02 1000 $2.55 10000 $2.52	Buy Now
Newark	IPT030N12N3GATMA1	Cut Tape	1,441		1	1 $5.9 10 $4.11 100 $3.08 1000 $2.87 10000 $2.87	Buy Now
Rochester Electronics	IPT030N12N3GATMA1		11,959		1	1 $2.83 10 $2.83 100 $2.66 1000 $2.41 10000 $2.41	Buy Now
Chip One Stop	IPT030N12N3GATMA1	Cut Tape	2,000	0 Weeks, 1 Days	1	1 $4.95 10 $3.81 100 $2.93 1000 $2.61 10000 $2.61	Buy Now

EBV Elektronik	IPT030N12N3GATMA1			17 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG IPD30N12S3L31ATMA1 MOSFET N-CHANNEL_100+
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPD30N12S3L31ATMA1	Cut Tape	1,718		1	1 $1.66 10 $1.053 100 $1.66 1000 $0.50828 10000 $0.50828	Buy Now
	IPD30N12S3L31ATMA1	Digi-Reel	1,718		1	1 $1.66 10 $1.053 100 $1.66 1000 $0.50828 10000 $0.50828	Buy Now
Newark	IPD30N12S3L31ATMA1	Cut Tape	3,997		1	1 $1.87 10 $1.27 100 $0.902 1000 $0.704 10000 $0.704	Buy Now
Rochester Electronics	IPD30N12S3L31ATMA1		2,350		1	1 $0.4701 10 $0.4701 100 $0.4419 1000 $0.3996 10000 $0.3996	Buy Now
Chip One Stop	IPD30N12S3L31ATMA1	Cut Tape	2,420	0 Weeks, 1 Days	5	1 - 10 $1.43 100 $0.636 1000 $0.504 10000 $0.504	Buy Now
EBV Elektronik	IPD30N12S3L31ATMA1		5,000	143 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Littelfuse Inc IXFB30N120P MOSFET N-CH 1200V 30A PLUS264
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFB30N120P	Tube	648		1	1 $42.79 10 $42.79 100 $32.5324 1000 $32.5324 10000 $32.5324	Buy Now
RS	IXFB30N120P	Bulk		8 Weeks	25	1 - 10 - 100 $50.32 1000 $50.32 10000 $50.32	Get Quote
onsemi NTBG030N120M3S SILICON CARBIDE (SIC) MOSFET - E
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTBG030N120M3S	Cut Tape	565		1	1 $11.55 10 $8.011 100 $11.55 1000 $11.55 10000 $11.55	Buy Now
	NTBG030N120M3S	Digi-Reel	565		1	1 $11.55 10 $8.011 100 $11.55 1000 $11.55 10000 $11.55	Buy Now
Mouser Electronics	NTBG030N120M3S		939			1 $10.77 10 $8.02 100 $6.02 1000 $5.83 10000 $5.83	Buy Now
Newark	NTBG030N120M3S	Cut Tape	160		1	1 $7.76 10 $7.76 100 $6.29 1000 $6.29 10000 $6.29	Buy Now
Richardson RFPD	NTBG030N120M3S		800		800	1 - 10 - 100 - 1000 $5.55 10000 $5.55	Buy Now
Avnet Asia	NTBG030N120M3S		160	17 Weeks	800	1 - 10 - 100 - 1000 $11.76843 10000 $10.17025	Buy Now

Avnet Silica	NTBG030N120M3S			18 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTBG030N120M3S		9,600	19 Weeks	800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NTBG030N120M3S		80		1	1 - 10 - 100 $7.27 1000 $7.27 10000 $7.27	Buy Now
IXYS Corporation IXGH30N120B3D1 IGBT PT 1200V TO-247AD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXGH30N120B3D1	Tube	482		1	1 $10.68 10 $10.68 100 $7.97433 1000 $7.97433 10000 $7.97433	Buy Now
TTI	IXGH30N120B3D1	Tube			300	1 - 10 - 100 - 1000 $8.42 10000 $8.42	Buy Now
TME	IXGH30N120B3D1				1	1 $10.77 10 $8.55 100 $7.68 1000 $7.68 10000 $7.68	Get Quote

Find more 30N12 price and stock on Findchips.com

30N12 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
30N120D2		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

30N12 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	30N120 30N120 247TM E153432 IXDR30N120	PDF
Untitled Abstract: No abstract text available Text: Advanced Technical Information IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package = 1200 V = 60 A = 2.4 V VCE sat typ (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM	Original	30N120 30N120 247TM E153432 D-68623	PDF
IXDR30N120 Abstract: 30N120 5027A R30N120 30n120d1 MJ10 Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 5027A R30N120 30n120d1 MJ10	PDF
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type unshielded GND electrode	Original	30N1200	PDF
30n120 Abstract: 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600 Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V C G TO-247 AD (IXDH) G E E IXDH 30N120 IXDT 30N120 G C IXDH 30N120 D1 IXDT 30N120 D1	Original	30N120 30N120 O-247 O--268 30N120D1 TRANSISTOR D1879 IXDH30N120 IXDH30N120D1 6T600	PDF
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable	Original	30N1200	PDF
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable	Original	30N1200	PDF
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode	Original	30N1200	PDF
Untitled Abstract: No abstract text available Text: Capacitive Sensors CFAK 30N1200 Capacitive Sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm	Original	30N1200	PDF
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 25 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift	Original	30N1200	PDF
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm mounting type non-flush GND electrode	Original	30N1200	PDF
IXDR30N120 Abstract: 30N120 50 a diode 600v high R30N120 Text: IXDR 30N120 D1 VCES IC25 IXDR 30N120 High Voltage IGBT with optional Diode ISOPLUSTM package VCE sat typ = 1200 V = 50 A = 2.4 V (Electrically Isolated Back Side) Short Circuit SOA Capability Square RBSOA C C G ISOPLUS 247TM E153432 G G C E E Isolated Backside*	Original	30N120 30N120 247TM E153432 IXDR30N120 IXDR30N120 50 a diode 600v high R30N120	PDF
30N120D1 Abstract: 30n120d 30N120 T30N120 ixdh 30n120d1 Text: IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 IXDT 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA C C G G E Preliminary Data VCES = 1200 V = 60 A IC25 VCE sat typ = 2.4 V E IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1	Original	30N120 30N120 IXDH30N120 D-68623 30N120D1 30n120d T30N120 ixdh 30n120d1	PDF
30n12 Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30N1200 Capacitive proximity sensors dimension drawing 72 58 M30 x 1,5 SW 36 LED Pot general data photo mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable 5 . 30 mm temperature drift	Original	30N1200 30n12	PDF

Untitled Abstract: No abstract text available Text: IXDH 30N120 IXDH 30N120 D1 VCES = 1200 V IC25 = 60 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode C C G G E Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kΩ VGES VGEM Continuous Transient IC25 IC90 ICM TC = 25°C	Original	30N120 30N120 IXDH30N120	PDF
diode 439 Abstract: 30N120 IXDR30N120 R30N120 Text: IXDR 30N120 D1 IXDR 30N120 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.4 V High Voltage IGBT with optional Diode ISOPLUSTM package (Electrically Isolated Back Side) C ISOPLUS 247TM E153432 C G G G C E E E IXDR 30N120 Isolated Backside* IXDR 30N120 D1 Symbol	Original	30N120 30N120 247TM E153432 IXDR30N120 diode 439 IXDR30N120 R30N120	PDF
30N120AU1 Abstract: robot control TO-268 IXDH30N120AU1 Text: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 VCES = 1200 V IC25 = 50 A VCE sat typ = 2.5 V Short Circuit SOA Capability Preliminary Data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	30N120AU1 O-268 30N120AU1 robot control TO-268 IXDH30N120AU1	PDF
Untitled Abstract: No abstract text available Text: 30N120IHRWG IGBT with Monolithic Free Wheeling Diode This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering	Original	NGTB30N120IHRWG NGTB30N120IHR/D	PDF
Untitled Abstract: No abstract text available Text: 30N120CN / 30N120CN Data Sheet August 2002 75A, 1200V, NPT Series N-Channel IGBT Features The 30N120CN and 30N120CN are NonPunch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar	Original	HGTG30N120CN HGTG5A30N120CN HGT5A30N120CN TA49281.	PDF
Untitled Abstract: No abstract text available Text: Capacitive proximity sensors CFAK 30 Sn = 30 mm Capacitive proximity sensors sample drawing 72 58 M30 x 1,5 SW 36 LED Pot sample picture general data special type liquid level sensor mounting type unshielded nominal sensing distance Sn 30 mm nominal sensing distance Sn adjustable	Original	30N1200 30N3200 30P1200 30P3200	PDF
Untitled Abstract: No abstract text available Text: Capacitive sensors Versatile, contactless, durable Edition 2012/2013 With capacitive sensors from Baumer you can complete almost any task. Visibly better: Baumer sensors. The Baumer Group is an internationally leading manufacturer of sensors and system solutions for factory and process automation. Partnership, precision and	Original	CH-8501 0x/12 11xxxxxx	PDF
30N120 Abstract: 30n120d Text: □IXYS IXDH 30N120 IXDH 30N120 D1 IXDT 30N120 30N120 D1 High Voltage IGBT with optional Diode Short Circuit SOA Capability Square RBSOA IXDH 30N120 IXDT 30N120 IXDH 30N120 D1 IXDT 30N120 D1 Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcGR Tj = 25°C to 150°C; RGE= 20 k£l	OCR Scan	30N120 30N120 IXDT30N120 O-247 D-68623 30n120d	PDF
30N120A Abstract: No abstract text available Text: Advanced Data High Voltage IGBT with Diode IXDH 30N120AU1 VCES IC25 VCE sat typ SCSOA Capability Symbol Test Conditions V CES Tj =25°C to 150°C Vco„ T, = Maximum Ratings 25°C to 150°C; RGE= 1 M fi 1200 V 1200 V V GES Continuous ±20 V V QE„ T ransient	OCR Scan	30N120AU1 O-247 30N120A	PDF
IXDH30N120AU1 Abstract: 30N120A Text: High Voltage IGBT with Diode IXDH 30N120AU1 IXDT 30N120AU1 V CES 1200 V 50 A 2.5 V ^C25 V CE sat typ S hort C ircuit SOA Capability Prelim inary Data Symbol Test Conditions V CES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M£i 1200 V V GES	OCR Scan	30N120AU1 O-268 IXDH30N120AU1 30N120A	PDF

30N12 Search Results

30N12 Result Highlights (2)

30N12 Price and Stock

Infineon Technologies AG IPT030N12N3GATMA1

Infineon Technologies AG IPD30N12S3L31ATMA1

Littelfuse Inc IXFB30N120P

onsemi NTBG030N120M3S

IXYS Corporation IXGH30N120B3D1

30N12 Datasheets (1)

30N12 Datasheets Context Search

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IXDR30N120

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30n120

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IXDR30N120

30N120D1

30n12

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diode 439

30N120AU1

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30N120

30N120A

IXDH30N120AU1