30N50
Abstract: IXFR32N50
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions
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ISOPLUS247TM
32N50
30N50
30N50
IXFR32N50
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32n50
Abstract: ixfh 26 n 49 30N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
O-247
32N50
ixfh 26 n 49
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32n50
Abstract: 32n50k transistor ixfh application note 30N50 1910 0016 diode 125OC IXFH30N50 IXFH32N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
125OC
32n50
32n50k
transistor ixfh application note
30N50
1910 0016 diode
125OC
IXFH30N50
IXFH32N50
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Untitled
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW VGS VGSM Continuous Transient ID25 TC = 25°C IDM IAR TC = 25°C
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30N50
32N50
125OC
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PDF
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30N50
Abstract: IXFR32N50
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 32N50 IXFR 30N50 Electrically Isolated Back Surface N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family ID25 500 V 30 A 500 V 29 A trr £ 250 ns RDS(on) 0.15 W 0.16 W Preliminary data Symbol Test Conditions
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ISOPLUS247TM
32N50
30N50
30N50
IXFR32N50
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PDF
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32n50
Abstract: 30N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Maximum Ratings VDSS VDGR TJ= 25°C to 150°C TJ= 25°C to 150°C; RGS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20 ±30
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30N50
32N50
O-247
O-268
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30N50
Abstract: 32n50 HiperFET HiPerFET Power MOSFETs 125OC IXFH30N50 IXFH32N50
Text: HiPerFETTM Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS TM Family Symbol Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; R GS = 1 MΩ 500 500 V V VGS VGSM Continuous Transient ±20
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30N50
32N50
32N50
30N50
HiperFET
HiPerFET Power MOSFETs
125OC
IXFH30N50
IXFH32N50
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PDF
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30N50
Abstract: 30n5
Text: MegaMOSTMFET IXTH 30N50 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 30 A IDM TC = 25°C, pulse width limited by TJM
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30N50
O-247
728B1
30N50
30n5
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PDF
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 30N50 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings V DSS TJ = 25°C to 150°C 500 V V DGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 30 A IDM TC = 25°C, pulse width limited by TJM
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30N50
O-247
728B1
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PDF
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30n45
Abstract: megamos 30N50 IXTH30N50 f g megamos IXTH30N45 IXTH30N50S
Text: Preliminary Data Sheet TM MegaMOS FET IXTH 30N45 IXTH 30N50 N-Channel Enhancement Mode VDSS ID25 RDS on 450 V 500 V 30 A 30 A 0.16 Ω 0.17 Ω TO-247 AD Symbol Test Conditions Maximum Ratings D (TAB) VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; RGS = 1 MΩ
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30N45
30N50
O-247
30n45
megamos
30N50
IXTH30N50
f g megamos
IXTH30N45
IXTH30N50S
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PDF
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IXFR32N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 500 V 29 A 500 V 30 A trr ≤ 250 ns RDS(on) 0.16 Ω 0.15 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
32N50
247TM
IXFR32N50
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IXFR32N50
Abstract: No abstract text available
Text: Advanced Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface ID25 RDS(on) 0.16 Ω 0.15 Ω 500 V 29 A 500 V 30 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
32N50
125OC
IXFR32N50
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PDF
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30N50
Abstract: 32N50 32N50Q IXFR30N50 IXFR32N50
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions
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Original
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ISOPLUS247TM
30N50Q
32N50Q
247TM
125OC
30N50
32N50
32N50Q
IXFR30N50
IXFR32N50
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PDF
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IXFR32N50
Abstract: No abstract text available
Text: HiPerFETTM Power MOSFETs ISOPLUS247TM VDSS Electrically Isolated Back Surface IXFR 30N50Q IXFR 32N50Q ID25 500 V 29 A 500 V 30 A trr £ 250 ns RDS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data Symbol Test Conditions
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ISOPLUS247TM
30N50Q
32N50Q
30N50
32N50
IXFR32N50
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PDF
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240 L025
Abstract: No abstract text available
Text: AdvancedTechnical Information HiPerFET Power MOSFETs ISOPLUS247™ IXFR 30N50 D25 Electrically Isolated Back Surface Test Conditions v D SS ^ DGR Tj v Vos v t G SM ^D2 5 >OM 'ar 500 500 V V Continuous Transient 120 ¿30 V V Tc = 2 5°C Tc = 25° C, pulse width limited by TJM
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OCR Scan
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ISOPLUS247TM
30N50
to150
00A/ns,
240 L025
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PDF
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32n50
Abstract: No abstract text available
Text: DIXYS HiPerFET Power MOSFETs IXFH/IXFT 30N50 IXFH/IXFT 32N50 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family VDSS ^D25 500 V 500 V 30 A 32 A D DS on 0.16 Q 0.15 £2 trr <250 ns Preliminary data Symbol v DOR v r . VGSM Test Conditions Tj= 25° C to 150° C
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OCR Scan
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30N50
32N50
32N50
O-247AD
O-268
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PDF
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30n45
Abstract: 30n50 IXTH30N50
Text: mm □ ix Y S Prelim inary Data Sheet M egaM O S F E T IXTH 30N45 IXTH 30N50 N-Channel Enhancement Mode Vv DSS ^D25 450 V 500 V 30 A 30 A □ DS on 0A6Q. 0.17 a TO-247 AD Symbol Test Conditions V Tj = 2 5°C to 15 0 °C v DQR ^ Maximum Ratings = 25°C to 150°C; Ras = 1 M il
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OCR Scan
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30N45
30N50
Cto150Â
30N50
O-247
4bflb22b
000402e}
IXTH30N50
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30N50
Abstract: No abstract text available
Text: □ IXYS X H H ifl JL æ* HiPerFET Power MOSFETs i x f h / ix f t SONSO IXFH/IXFT 32N50 N-Channel Enhancement Mode Highdv/dt, Lowtrr, HDMOS™ Family Symbol V v DGR VGSM L = 25°C to 150°C 25°C to 150°C; RGS = 1 M£i = 25°C = 25°C pulse width limited
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OCR Scan
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32N50
30N50
30N50
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PDF
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IXFH30N50
Abstract: IXFH32N50
Text: P R E L IM IN A R Y D A T A S H E E T V DSS HiPerFET Power MOSFETs IXFH30N50 IXFH32 N50 ^D25 p DS on 500 V 30 A 0.16 Q 500 V 32 A 0.15 a trr < 250 ns N-Channel Enhancement Mode High dv/dt, Low HDMOS™ Family Symbol Test Conditions V DSS Tj V DCR Tj = 25°C to
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OCR Scan
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IXFH30N50
IXFH32
30N50
32N50
00030clÃ
IXFH32N50
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PDF
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30N50
Abstract: 32N50 32N50Q ISOPLUS247 IXFR30N50 lt 715 IXFR32N50
Text: □ IXYS Advanced Technical Information Vv DSS HiPerFET Power MOSFETs ISOPLUS247™ IXFR 30N50Q IXFR 32N50Q Electrically Isolated Back Surface p ^D25 29 A 500 V 30 A 500 V t rr £ 250 ns DS(on) 0.16 W 0.15 W N-Channel Enhancement Mode High dV/dt, Low t , HDMOS™ Family
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ISOPLUS247â
30N50Q
32N50Q
30N50
32N50
32N50
ISOPLUS247
IXFR30N50
lt 715
IXFR32N50
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PDF
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IRFP 260 M
Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH
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OCR Scan
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67N10
75N10
42N20
50N20
35N30
40N30
12N50A
21N50
24N50
30N50
IRFP 260 M
5n100
6n80
IRFP
IXTN 36N50 C
irfp 240
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PDF
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6N80
Abstract: IXTN 36N50 C 40N160 40N140 ixtn 79n20 30N45 irfp 240 IXTK33N50 IXTN21N100 IRFP
Text: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode t jm = 150°c ► New V p >D25 Tc = 25°C A DS on Tc = 25°C a 200 30 42 50 IRFP 254 250 ► IRFP 264 thJC K/W W 300 4 180 360 140 0.65 190 4600 285 400 220 0.42 300 360 max. max. max. 68
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67N10
75N10
42N20
50N20
68N20
35N30
40N30
30N45
12N50A
21N50
6N80
IXTN 36N50 C
40N160
40N140
ixtn 79n20
irfp 240
IXTK33N50
IXTN21N100
IRFP
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PDF
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IRFP 640
Abstract: IRFP 260 M 6N80A 0 280 130 023 IRFP 24n50 5N10 IXTM20N60 6N90A 01N100
Text: Standard Power MOSFETs and MegaMOSmFETs T series Standard types t jm = ► New 150°c V T c = 25°C A R c es DS on Tc = 25°C Q tr typ. 25aC ns Qfl ^ th J C Po max. max. nC K/W W 260 0.42 300 6 180 285 360 400 140 220 0.65 0.42 190 300 150 280 370 370 140
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135XTP
01N100
1N100
2N100
2N100
100X2
01N100X3
O-251,
O-220AB
IRFP 640
IRFP 260 M
6N80A
0 280 130 023
IRFP
24n50
5N10
IXTM20N60
6N90A
01N100
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30n50 mosfet
Abstract: DSE119-06AS VM0400-02F MCC SMD DIODE 300-06DA smd43 35-06AS 500-06DA 250-12DA mosfet p channel
Text: Contents Insulated Gate Bipolar Transistors IGBT Package style vCES Tc = 2S°C 2. TO-247 SMD 1a. TO-263AA 2a. TO-247 SMD Page A V 1 600 20 48 3.0 2.7 3 600 60 2.5 2 600 75 2.7 1 600 20 20 2.5 3.0 600 48 60 60 2.7 2.9 2.5 600 16 25 16 2.5 600 48 2.7 7 600
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O-263
O-263AA
O-247
IXGA10N60A
IXGA24N60A
IXGH32N60B
IXGH50N60AS
IXGA10N60U1
30n50 mosfet
DSE119-06AS
VM0400-02F
MCC SMD DIODE
300-06DA
smd43
35-06AS
500-06DA
250-12DA
mosfet p channel
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PDF
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