10N90
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V = 12 A ID25 RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
O-204
O-247
O-247
O-204
10N90
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weight TO-264
Abstract: No abstract text available
Text: Advance Technical Information IXTK 250N10 High Current MegaMOSTMFET VDSS ID25 = 100 V = 250 A Ω = 5 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 100
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250N10
728B1
123B1
728B1
065B1
weight TO-264
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IXTK80N25
Abstract: 80N25 megamos
Text: IXTK 80N25 High Current MegaMOSTM FET VDSS ID25 = 250 V = 80 A Ω = 33 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS
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80N25
IXTK80N25
80N25
megamos
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110N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ
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110N30
728B1
123B1
728B1
065B1
110N30
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75N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A Ω = 42 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 300
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75N30
O-264
728B1
123B1
728B1
065B1
75N30
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120N25
Abstract: SiEMENS EC 350 98 0
Text: IXTK 120N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 120 A Ω = 20 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250 V VGS
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120N25
120N25
SiEMENS EC 350 98 0
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IRFP
Abstract: No abstract text available
Text: IRFP 470 VDSS MegaMOSTMFET ID cont RDS(on) = 500 V = 24 A = 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 500 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30
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O-247
IRFP
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75N10
Abstract: No abstract text available
Text: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 IXTH/IXTM 75 N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 100 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 100 V
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67N10
75N10
O-204
O-247
O-204
O-247
75N10
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40N30
Abstract: IXTH40N30 IXTM35N30 IXTM40N30 40AA
Text: VDSS MegaMOSTMFET IXTH/IXTM 35 N30 IXTH 40 N30 IXTM 40 N30 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 300 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 300 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C
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35N30
40N30
O-204
O-247
O-204
40N30
IXTH40N30
IXTM35N30
IXTM40N30
40AA
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62n25 mosfet
Abstract: No abstract text available
Text: Advance Technical Information IXTK 62N25 High Current MegaMOSTMFET VDSS ID25 = 250 V = 62 A Ω = 35 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1.0 MΩ 250
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62N25
O-264
728B1
62n25 mosfet
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VMO 580-02F
Abstract: zy180l
Text: Advanced Technical Information MegaMOSTMFET Module VMO 580-02F VDSS ID25 RDS on = 200 V = 580 A Ω = 3.8 mΩ N-Channel Enhancement Mode D S D G KS G KS S Features MOSFET Symbol Conditions VDSS TVJ = 25°C to 150°C Maximum Ratings VGS 200 V ±20 V ID25
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580-02F
UL758,
ZY180L
350mm
ZY180R
D-68623
VMO 580-02F
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12n120
Abstract: No abstract text available
Text: Advance Technical Information MegaMOSTMFET VDSS = 1200 V ID cont = 12 A RDS(on)= 1.3 Ω IXTH 12N120 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1200 V VGS Continuous
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12N120
O-247
728B1
12n120
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10N100
Abstract: N100 12n100 TO204AA
Text: VDSS MegaMOSTMFET ID25 RDS on 1000 V 10 A 1.20 Ω 1000 V 12 A 1.05 Ω IXTH/IXTM 10 N100 IXTH/IXTM 12 N100 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 1000 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 1000 V
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10N100
12N100
O-247
O-204
10N100
N100
12n100
TO204AA
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V ID25 = 50 A Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient
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50N20
O-247
O-204
O-247
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75N30
Abstract: No abstract text available
Text: Advance Technical Information IXTK 75N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 75 A Ω = 42 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Continuous ±20 V
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75N30
728B1
123B1
728B1
065B1
75N30
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Untitled
Abstract: No abstract text available
Text: MegaMOSTMFET IXTH 12N90 IXTM 12N90 VDSS = 900 V ID25 = 12 A RDS on = 0.90 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS T J = 25°C to 150°C 900 V VDGR T J = 25°C to 150°C; RGS = 1 MΩ 900 V VGS Continuous ±20 V VGSM Transient
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12N90
O-204
O-247
O-247
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nf 931 diode
Abstract: 400-02F C150 D-68623 megamos nf 931 vmo 400-02f
Text: MegaMOSTMFET Module VMO 400-02F VDSS ID25 RDS on = 200 V = 418 A Ω = 4.2 mΩ 1 N-Channel Enhancement Mode 11 10 Symbol Test Conditions 2 TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; R GS = 10 kΩ 200 V V GS Continuous ±20 V V GSM Transient ±30
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400-02F
nf 931 diode
C150
D-68623
megamos
nf 931
vmo 400-02f
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Diode D25 N10 R
Abstract: 75N10 IXTH75N10
Text: VDSS MegaMOSTMFET IXTH/IXTM 67 N10 100 V IXTH/IXTM 75 N10 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V V GS
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67N10
75N10
O-204
O-247
O-204
O-247
Diode D25 N10 R
75N10
IXTH75N10
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Untitled
Abstract: No abstract text available
Text: Advance Technical Information IXTK 110N30 High Current MegaMOSTMFET VDSS ID25 = 300 V = 110 A Ω = 26 mΩ RDS on N-Channel Enhancement Mode Symbol Test conditions Maximum ratings VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Continuous ±20
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110N30
728B1
123B1
728B1
065B1
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Untitled
Abstract: No abstract text available
Text: □ IX Y S V DSS MegaMOS FET IXTH/IXTM21N50 IXTH/IXTM24N50 500 V 500 V □ ^D25 DS on 21 A 0.25 Q 24 A 0.23 Q N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V VDOR Tj = 25 °C to 150°C; RGS = 1 MQ 500
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IXTH/IXTM21N50
IXTH/IXTM24N50
O-247
21N50
24N50
4bflb22b
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Untitled
Abstract: No abstract text available
Text: 11 Y\. YS mma f X 1 .1 O v DSS MegaMOS FET IXTH / IXTM 11N80 800 V IXTH / IXTM 13N80 800 V p ^D25 DS on 11 A 0.95 fì 13 A 0.80 Q N-Channel Enhancement Mode Symbol Test Conditions V * DSS ^ V DGR VGS v GSM ' d 25 •d m PD Maximum Ratings = 25°C to 150°C
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11N80
13N80
11N80
13N80
O-204
O-247
IXTM13N80
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15N60
Abstract: IXTM15N60
Text: I X Y S IDE CORP D I 4bflb22b D00034Ö /S' □IX Y S MegaMOS'" FETs IXTH15N60, 55 IXTM15N60, 55 M A X IM U M R ATIN G S Sym. IXTH15N55 IXTM15N55 IXTH15N60 IXTM15N60 U nit Drain-Source Voltage 1 Vdss 550 600 Vdc Drain-Gate Voltage (R q s = 1.0MÜ) (1) Vd g r
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4bflb22b
D00034Ö
IXTH15N60,
IXTM15N60,
IXTH15N55
IXTM15N55
IXTH15N60
IXTM15N60
50-600V,
O-247
15N60
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21N100
Abstract: 21N10 ixtw DIXYS IXTN21N100
Text: g ix Y S _ IXTK 21N100 IXTN 21N100 High Voltage MegaMOS FETs VDSS ^D25 P DS on = 1000 = 21 A = 0.55 N-Channel, Enhancement Mode TO-264 AA (IXTK) Symbol Test Conditions Maximum Ratings IXTK IXTN VDSS Tj =25°Cto150°C Tj = 25° C to 150° C; RGS= 1 MQ
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21N100
O-264
Cto150
OT-227
21N100
21N10
ixtw
DIXYS
IXTN21N100
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Untitled
Abstract: No abstract text available
Text: VMO 450-02F MegaMOS FET Module N-Channel Enhancement Mode ps Maximum Ratings Symbol Conditions Voss VdgR T j = 25°C to 150°C 200 V T j = 25°C to 150°C; RGS = 10 k£i 200 V VGS C ontinuous ±20 V VgsM Transient ±30 V Id25 Tc = 25°C 450 A Id80 Tc = 80°C
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450-02F
C3-16
C3-17
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