W2464AK
Abstract: W2464AK-20 W2464AK-25 W2464A W2464 w2464aj-20 tda 3350
Text: MIS 1 5 1992 Winbond W2464A 8K X 8 HIGH SPEED CMOS STATIC RAH FEATURES DESCRIPTION • Low Power Consumption : Active : 400mW Typ. Standby : 25/zW(Typ.)- L-Version • Fast Access Time : 20/25 ns (Max.) • Single +5V Supply • Fully Static Operation •Direct TTL Compatible : All Inputs and
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W2464A
400mW
25/zW
8192X8
B-1930
W2464AK
W2464AK-20
W2464AK-25
W2464A
W2464
w2464aj-20
tda 3350
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CY7C419
Abstract: IDT7200 IDT7201 IDT7202 IDT7203 1DT7 CY7C424-40DMB CY7C421-30AC cy7c421
Text: CY7C419/21/25/29/33 ’* CYPRESS Features 256x9,512x9, lK x9, 2Kx9, 4K x 9 C ascadable FIFO Functional Description • 256 x 9, 512 x 9,1,024 x 9,2048 x 9, and 4096 x 9 FIFO buffer memory • Dual-port RAM cell • Asynchronous read/write • High-speed 50.0-MHz read/write
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CY7C419/21/25/29/33
300-mil
IDT7200,
IDT7201,
IDT7202,
IDT7203,
1DT7204
256x9
512x9,
CY7C419
IDT7200
IDT7201
IDT7202
IDT7203
1DT7
CY7C424-40DMB
CY7C421-30AC
cy7c421
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Untitled
Abstract: No abstract text available
Text: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static
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65536-BIT
MB82B75-1B
MB82B75-20
TS270-A893
MB82B75
384-words
30Qmil
C24G62S-1C
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C2104C
Abstract: No abstract text available
Text: KM48C2004C, KM48C2104C KM48V2004C, KM48V2104C CMOS DRAM 2M x 8Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 2,097,152 x 8 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power supply voltage +5.0V or +3.3V , refresh cycle (2K Ref. or 4K
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KM48C2004C,
KM48C2104C
KM48V2004C,
KM48V2104C
64ms/32ms
C2104C
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