TOROIDS transformer
Abstract: GP 841 Diode
Text: AN ALO G D E V IC E S 5-Bit Programmable Triple Power Supply Controller for Pentium III Processors ADP3155 FEATURES Active V oltage Positioning w ith Gain and Offset A djustm ent O ptim al Com pensation for Superior Load Transient Response VRM 8.2, VRM 8.3 and VRM 8.4 Com pliant
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ADP3155
TSSOP-20
20-Lead
RU-20
TOROIDS transformer
GP 841 Diode
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3155 power transistor
Abstract: No abstract text available
Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BO L Collector-Base Voltage VALUE UNIT V CBO
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ZTX214C
-10hA,
-100mA,
-10mA,
100MHz
200Hz,
15KHZ
3155 power transistor
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3155 power transistor
Abstract: ZTX214C equivalent ZTX214C DSA003764
Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 MARCH 94 FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO
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ZTX214C
-10mA,
-100mA,
200Hz,
100MHz
15KHz
3155 power transistor
ZTX214C equivalent
ZTX214C
DSA003764
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PDF
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR LOW NOISE TRANSISTOR ZTX214C ISSUE 2 - MARCH 94_ FEATURES * Low noise * High gain APPLICATIONS * Audio circuits * Instrumentation E-Line T092 Compatible - ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage
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ZTX214C
001G35S
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A 3131
Abstract: CA3110 ca3109 CA3150 4-input nand gates ttl 4-input or gates ttl ca3104 CA3105 CA3125
Text: fl MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise
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3120/C,
3121/C
3122/C,
3123/C,
3124/C,
3125/C
3126/C
3128/C,
3129/C
3130/C
A 3131
CA3110
ca3109
CA3150
4-input nand gates ttl
4-input or gates ttl
ca3104
CA3105
CA3125
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c 3725 transistor
Abstract: 2N3725 3725 transistor 3725
Text: 2N 3725 SILICON PLANAR NPN HIG H -VO LTAG E, H IG H -CU R REN T SWITCH The 2N 3725 is a silicon planar epitaxial transistor in T O -3 9 metal case. It is a high-voltage, high-current switch used for memory applications requiring breakdown voltages up to 50V
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G-3155
c 3725 transistor
2N3725
3725 transistor
3725
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ZTX214C
Abstract: T092 ZTX300
Text: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTOR ISSU E 2 - MARCH 94_ FEATURES * 15 Volt V,CEO fT=500 M H z ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAMETER Coliector-Base Voltage VALUE V CBO 40 Collector-Emitter Voltage
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lc-10mA,
-10mA,
-100mA,
f-100MHz
U-200MA
200Hz,
15KHz
ZTX214C
T092
ZTX300
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PDF
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Untitled
Abstract: No abstract text available
Text: MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor logic designed for general purpose digital applications. The family has a high operating speed 30-50 MHz clock rate , good external noise
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16-LEAD
10-LEAD
24-LEAD
12-LEAD
40-LEAD
20-LEAD
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PDF
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Untitled
Abstract: No abstract text available
Text: LA NS DA LE SEMICONDUCTOR 35E D • SBfiflDB 0 0 0 0 3 5 ^ 2 ■ LTE MAXIMUM RATINGS T -4 3 -0 1 Rating Supply Operating Voltage Range - Vco TTL III MOTOROLA INTEGRATED CIRCUITS 3100 Series 3000 Series TTL III integrated circuits com prise a family of transistor-transistor
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14-LEAD
16-LEAD
10-LEAD
24-LEAD
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PDF
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1RFD120
Abstract: 6ati T3B diode 2s4 4pin XSTR IRFD212
Text: MOTOROLA SC IM E L> I X S T R S /R F b 3 b ?2 S 4 Q G Ô IT E l 4 | MOTOROLA • I SEM ICO NDUCTOR I TECHNICAL DATA IR FD 210 IRFD211 IR FD 212 IR FD 213 Advance Information Sm all-Sign al T M O S Field Effect Transistors N -C h ann el Enh an cem en t-M ode
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IRFD210
IRFD211
IRFD212
IRFD213
I0I01Â
1RFD120
6ati
T3B diode
2s4 4pin
XSTR
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PDF
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Untitled
Abstract: No abstract text available
Text: Q D 1 7b S f i MITSUBISHI RF POWER TRANSISTOR TIS 2SC3022 NPN EP IT A X IA L PLANAR T Y P E DESCRIPTION 2SC3022 is a silicon NPN epitaxial planar type transistor specifi cally designed for UHF high power amplifier applications. OUTLINE DRAWING Dim e n sio n s in mm
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2SC3022
2SC3022
520MHz,
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2N6122 transistor
Abstract: 2N6121 2n6123 2N6I24 2N6124 2N61 2N6122 2N6126
Text: MOTOROLA SC X S T R S /R 1 SE F b3b7254 I QQ ÔM Si'l I fl t lB U N rn MOTOROLA 2N6121, 2N61*2 2N6123 SEMICONDUCTOR TECHNICAL DATA PNP 2N6124, 2N6125 COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 4 AM PERE . . . designed for use in power amplifier and switching circuits, —
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b3b7254
2N6121,
2N6123
2N6124,
2N6125
2N6121
2N6124
2N6122
2N612S
2N6122 transistor
2n6123
2N6I24
2N61
2N6126
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PDF
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irfd211
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA IR FD 210 IRFD211 IRFD212 IRFD213 Advance Information S m all-S ig n al T M O S Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S 4-Pin DIP 1 WATT TM O S FETs rDS on = 1.5 O HM 200 VOLTS T h e s e T M O S F E T s a r e d e s ig n e d f o r lo w v o lt a g e , h ig h
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IRFD211
IRFD212
IRFD213
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PDF
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transistor equivalent table
Abstract: 3155 power transistor P6042 transistor crossover
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6836 D esigner’s Data Sheet Switchmode Series Ultra-Fast NPN Silicon Power Transistors These transistors are designed for high-voltage, high-speed, power switching in inductive circuits w here fall tim e is critica l. They are p a rticu la rly suited for
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2N6836
P-6042
transistor equivalent table
3155 power transistor
P6042
transistor crossover
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PDF
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Untitled
Abstract: No abstract text available
Text: TN6726A / NZT6726 TN6726A NZT6726 C C B TO-226 B SOT-223 E C E PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A. Sourced from Process 77. Absolute Maximum Ratings*
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TN6726A
NZT6726
TN6726A
O-226
OT-223
O-226
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PDF
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IRF612
Abstract: IRF613 IRF611 IRF610 IRFB10 power MOSFET IRF610 IRF 513#
Text: Standard Power MOSFETs- IRF610, IRF611, IRF612, IRF613 File Number 1576 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.0A and 2.5A, 150V-200V
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IRF610,
IRF611,
IRF612,
IRF613
50V-200V
IRF612
IRF613
IRF611
IRF610
IRFB10
power MOSFET IRF610
IRF 513#
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PDF
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Untitled
Abstract: No abstract text available
Text: ÂV A N T E K Q INC a v a 44E D n t e El 1141%!= 0DQÔ07S T BIAVA U T O /U T C 1511 S eries T h in -F ilm C a s c a d a b ie A m p lifie r 5 to 1500 M H z k FEATURES APPLICATIONS • Frequency Range: 5 to 1500 MHz • Noise Figure: 3 .5 d B T y p • Low Power Consumption
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PDF
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D-90491
Abstract: PJ 1179
Text: SALES OFFICES EUROPE AMERICAS DENMARK ITALY BRAZIL 2730 HERLEV Herlev Torv, 4 Tel. 45-44 94.85.33 Telefax: (45-44) 948694 20090 ASSAGO (MI) V.le Milanofiori - Strada 4 - Palazzo A'4/A Tel. (39-2) 57546.1 <10 linee) Telefax: (39-2) 8250449 05413 SÀO PAULO
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TeW39-51)
i39-6)
286-CJ33
55-11i
SF-08150
Ga6814
D-90491
PJ 1179
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PDF
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BF 6591
Abstract: transistor on 4409 2SC5617 NE685 NE685M13 NE685M13-T3-A S21E NEC JAPAN 7915 nec 7915 6004 0215
Text: NEC's NPN SILICON TRANSISTOR NE685M13 OUTLINE DIMENSIONS Units in mm FEATURES PACKAGE OUTLINE M13 2 1 (Bottom View) 0.5+0.1 ñ0.05 0.3 3 0.2+0.1 ñ0.05 0.35 LOW NOISE FIGURE: NF = 1.5 dB at 2 GHz 0.35 • 1.0+0.1 ñ0.05 HIGH GAIN BANDWIDTH PRODUCT: fT = 12 GHz
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NE685M13
NE685M13
BF 6591
transistor on 4409
2SC5617
NE685
NE685M13-T3-A
S21E
NEC JAPAN 7915
nec 7915
6004 0215
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PDF
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transistor D 4515
Abstract: PJ 1179 D 4515 ST2000 4463 SL71Y STE2001 701023 Pj 1189 1 928 403 226
Text: Solutions for Sales Offices 69050-002 Manaus/AM Costantino Nery Street, 2789 80 Stair - 806 Room Chapada Tel. +55 92 657 0017 Fax +55 92 657 0157 COLORADO Longmont Tel. +303 772 9729 Fax +303 381 3680 CONNECTICUT Woodstock Tel. +860 928 7700 Fax +860 928 2722
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BRLCD/0201
286-CJ33
transistor D 4515
PJ 1179
D 4515
ST2000
4463
SL71Y
STE2001
701023
Pj 1189
1 928 403 226
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PDF
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Discriminator sot-23-5
Abstract: T893
Text: Semiconductor, Inc. TC44 Series VOLTAGE DETECTOR FEATURES GENERAL DESCRIPTION • ■ The TC44 Series are CMOS voltage detectors, suited especially for battery-powered applications because of their extremely low 1 pA operating current and small surfacemount packaging. Each part is laser trimmed to the desired
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OT-23-5
OT-89-3
OT-89
OT-23-5:
OT-23-5/SOT-89:
OT-23-5
OT-89-3
Discriminator sot-23-5
T893
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PDF
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LM339
Abstract: No abstract text available
Text: National LP339 & Semiconductor LP339 Ultra-Low Power Quad Comparator General Description The LP339 consists of lour independent voltage compara tors designed specifically to operate from a single power supply and draw typically 60 /j.A of power supply drain cur
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LP339
LP339
TL/H/5226-23
TL/H/522B-24
TL/H/5226-20
TL/H/5226-27
TLVH/5226-29
LM339
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PDF
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2H2222
Abstract: 2H222 LM339 1S47b schematic diagram 50 VDC POWER SUPPLY VOLTAGE LEVEL RELAY SM 125 220 156 power supply schematic diagram transistor 79t AN-450 LP339M
Text: LP339 National Semiconductor LP339 Ultra-Low Power Quad Comparator General Description The LP339 consists of four independent voltage compara tors designed specifically to operate from a single power supply and draw typically 60 ¡iA of power supply drain cur
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LP339
2H2222
1/4LP339^
LP339
TL/H/5226-29
TL/H/5226-27
TL/H/5226-30
TL/H/5226-28
b5D1124
2H222
LM339
1S47b
schematic diagram 50 VDC POWER SUPPLY
VOLTAGE LEVEL RELAY SM 125 220 156
power supply schematic diagram
transistor 79t
AN-450
LP339M
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PDF
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MFE9200
Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Text: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com
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DK101/D.
O-22QI
0020-H
MFE9200
BUZ84A
BUZ90 equivalent
IRF150 MOSFET AMP circuit
BUZ35S
MTP40N06M
IRFZ22 mosfet
1RF620
MTM12N10L
MTP25N10E
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