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    322 MOSFET Search Results

    322 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    322 MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    "AN-978" IR2110

    Abstract: IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A
    Text: APPLICATION NOTES Savings tips that add value to your designs. INTERNATIONAL RECTIFIER¥APPLICATION ENG¥233 KANSAS ST.¥EL AN-990AJ IGBTの応用特性 HEXFREDはInternational Rectifier社の商標 By Steve Clemente


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    PDF AN-990AJ AN-983AIGBT AN-983A IRGBC40F IR2110 83E-02 17E-04 13E-04 9E-03 "AN-978" IR2110 IR2110 CHOPPER AN937A AN-978 IR2110 bc40f AN-937A IR2110 LDIC NOTES ENG233 AN944A

    SI9952

    Abstract: SI9956 12V convert to 3.3V Si9410 "Industry Part" tip dt97 IRF9410 IRF9952 IRF9953 IRF9956
    Text: DT 97-1 DESIGN TIPS INTERNATIONAL RECTIFIER • 233 KANSAS ST. • EL SEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 REDUCING SWITCHING LOSSES IN PORTABLE DC/DC CONVERTERS By Chris Davis Efficiency and power density is critical in power converters for portable systems. Synchronous buck


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    PDF Si9410 IRF9410 IRF9410 Si9410 IRF9956 Si9956 IRF9953 Si9953 IRF9952 Si9952 SI9952 SI9956 12V convert to 3.3V "Industry Part" tip dt97 IRF9952 IRF9953 IRF9956

    SI9952

    Abstract: si9410 tip dt97 IRF9410 IRF9952 IRF9953 IRF9956 MAX786 Si9953 DT97
    Text: Index DT 97-1 DESIGN TIPS INTERNATIONAL RECTIFIER • 233 KANSAS ST. • EL SEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 REDUCING SWITCHING LOSSES IN PORTABLE DC/DC CONVERTERS By Chris Davis Efficiency and power density is critical in power converters for portable systems. Synchronous buck


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    PDF Si9410 IRF9410 IRF9410 Si9410 IRF9956 Si9956 IRF9953 Si9953 IRF9952 Si9952 SI9952 tip dt97 IRF9952 IRF9953 IRF9956 MAX786 Si9953 DT97

    EPR-89

    Abstract: Power Integrations LNK362 equivalent LNK362
    Text: Title Engineering Prototype Report for 2.0 W CV Adapter using LinkSwitchTM-XT LNK362P Specification 85 VAC - 265 VAC Input, 6.2 V, 322 mA Output Application Low Cost Adapter Author Applications Engineering Department Document Number EPR-89 Date April 26, 2013


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    PDF LNK362P EPR-89 EPR-89 Power Integrations LNK362 equivalent LNK362

    Untitled

    Abstract: No abstract text available
    Text: 1102 Silver Lake Road, Cary, IL 60013-9919 800/322-COIL Fax 847/639-1469 SU RFACE M OU N T I N DU CT OR: U 6 9 0 4 -A FOR USE WITH MOTOROLA SEMICONDUCTORS: MC33470 SYNCHRONOUS RECTIFICATION DC-DC CONVERTER IC, MMSF3300 POWER MOSFET AND MBRD1035CTL SCHOTTKY RECTIFIER


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    PDF 800/322-COIL MC33470 MMSF3300 MBRD1035CTL U6904-A 035CTL U6904-A

    SNX-1378

    Abstract: EE16 10 pin snx1378 LSLA40343 EE16 transformer working taicon capacitors LNK362P LNK362 ee16 lnk E-Shield Transformer Techniques for Low EMI EE16
    Text: Engineering Prototype Report for 2.0 W CV Adapter using LNK362P Title Specification 85-265 VAC Input, 6.2 V, 322 mA Output Application Low Cost Adapter Author Power Integrations Applications Department Document Number EPR-89 Date 08-Nov-05 Revision 1.0 Summary and Features


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    PDF LNK362P EPR-89 08-Nov-05 humidit89 SNX-1378 EE16 10 pin snx1378 LSLA40343 EE16 transformer working taicon capacitors LNK362P LNK362 ee16 lnk E-Shield Transformer Techniques for Low EMI EE16

    irf3203

    Abstract: irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722
    Text: IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 N’CHANNEL POWER MOSFETS FEATURES • Lower R ds on • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area


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    PDF IRF720/721/722/723 IRFP320/321/322/323 IRF320/321/322/323 IRF720/IRFP320/IRF320 IRF721 /IRFP321 /IRF321 IRF/22/IH FP322/IRF322 IRF723/IRFP323/IRF323 irf3203 irf3203 MOSFET IRFP320-3 IRFP3203 irfp321 irf320 F321 IRF N-Channel Power MOSFETs jys 33 ST E 722

    irfr320

    Abstract: U320 DIODE 322 mosfet U322
    Text: N-CHANNEL POWER MOSFET IRFR320/322 IRFU320/322 FEATURE • • • • • • • D-PACK Lower R d s ON Improved inductive ruggedess Fast switching time Rugged polysilicon gate cell structure Lower input capacitance Extended sate operating area Improved high temperature reliability


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    PDF IRFR320/322 IRFU320/322 IRFR320/322 IRFR320/U320 IRFR322/U322 irfr320 U320 DIODE 322 mosfet U322

    ci ir2110

    Abstract: IR igbt gate driver ic dc control using ir2110 and mosfet 47N IGBT h bridge ir2110 IG8T IR2110 10DF6 IR211 IRGPC50F
    Text: International Hü] Rectifier D e sig n T ips DT 92-3B INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 USING STANDARD CONTROL IC'S TO GENERATE NEGATIVE GATE BIAS FOR MOSFETS AND IGBTS


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    PDF 92-3B RH89BB, Ligurla49 ci ir2110 IR igbt gate driver ic dc control using ir2110 and mosfet 47N IGBT h bridge ir2110 IG8T IR2110 10DF6 IR211 IRGPC50F

    fu320

    Abstract: u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320
    Text: SAMSUNG ELECTRONICS INC b4E D • 7^4142 IRFR320/322 IRFU320/322 N-CHANNEL POWER MOSFET FEATURE • • • • • • • QG1235G 044 ■ SflGK D-PACK Lower R ds <0N Improved inductive ru gged ess Fast switching time R ugged polysllic on gate cell structure


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    PDF Q1235G IRFR320/322 IRFU320/322 IRFR320/U320 IRFR322/U322 loS-20W fu320 u322 IRFR322 i FU320 322 mosfet tag t 2512 u320 diode 160Tl IRFR320

    IRL2203

    Abstract: 17JE
    Text: International [ioniRectifier D e sig n T ip s INTERNATIONAL RECTIFIER - APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 - FAX (310)322-3332 CURRENT CAPABILITY OF TO-220 PACKAGE by Steve Clemente and Shahin Maloyans i. Background


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    PDF O-220 IRL2203 17JE

    ir21xx

    Abstract: IR2125 kira 1N4107 1N4110
    Text: International Hü] Rectifier D e sig n T ips DT 94-1A INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 KEEPING THE BOOTSTRAP CAPACITOR CHARGED IN BUCK CONVERTERS By Laszlo Kiraly


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    PDF IR2125. 1N4110 1N4107. ir21xx IR2125 kira 1N4107

    IR2125 CIRCUIT SCHEMATIC

    Abstract: ic 555 timer igbt driver with 555 timer 555 timer ICL71555IPA 555 timer igbt driver IR power mosfet switching power supply ic 555 timer gate drive mosfet igbt capacitor charge pump ic 555 timer gate drive schematic circuit
    Text: International Hü] Rectifier D e sig n T ips DT 92-4A INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 SIMPLE HIGH SIDE DRIVE PROVIDES FAST SWITCHING AND CONTINUOUS ON-TIME


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    power supply using IR2155

    Abstract: electronic ballast kW power ir2155 ir2155 design tips IR2155 electronic ballast ir2151 IC 555 as temperature controller 555 timer igbt driver igbt driver with 555 timer transistor Electronic ballast
    Text: International Hü] Rectifier D e sig n T ips DT 94-1OA INTERNATIONAL RECTIFIER • APPLICATIONS ENG. • 233 KANSAS ST. • ELSEGUNDO, CA. 90245 • TEL 310 322-3331 • FAX (310)322-3332 CHOOSING THE CORRECT DROPPING RESISTOR VALUE FOR THE IR2151/IR2152/IR2155 CONTROL IC'S


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    PDF IR2151/IR2152/IR2155 IR2155/51 power supply using IR2155 electronic ballast kW power ir2155 ir2155 design tips IR2155 electronic ballast ir2151 IC 555 as temperature controller 555 timer igbt driver igbt driver with 555 timer transistor Electronic ballast

    ifu320

    Abstract: fu320 IFR321 fr320
    Text: IRFR320/321/322 IRFU320/321/322 HARRIS N-Channel Power MOSFETs Avalanche-Energy-Rated A u g u st 1991 Packages Features IR F U 3 2 0 /3 2 1 /3 2 2 T O -2 5 1 A A TOP VIEW • 2.6A and 3.1A, 350V and 400V • rDS on = 1 .8 0 fl and 2.5CI > SOURCE • Single Pulse Avalanche Energy Rated


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    PDF IRFR320/321/322 IRFU320/321/322 IRFR320, IRFR321, IRFR322, IRFU320, IRFU321 IRFU322 ifu320 fu320 IFR321 fr320

    transistor IRF 9205

    Abstract: all transistor IRF 310 IRF 9205 list of n channel power mosfet HEXFET IRF igbt spice model AN-975 IRF n CHANNEL MOSFET Depletion-Mode MOSFET mosfet n channel irf
    Text: International S Rectifier M- r^ * _ f k«JJ Q < DT 92-5 INTERNATIONAL RECTIFIER APPLICATIONS • 233 KANSAS ST. • EL SEGUNDO, CA 90245 • TEL: 310) 322-3331 • FAX: (310) 322-3332 SPICE MODELS FOR MOS-GATED POWER DEVICES By Donald A. Dapkus II As PCs become more powerful and


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    IRLML

    Abstract: 10BQ015 10BQ040 IRF7401 IRF7601 IRF7604 IRLML2402 ENG233 rapid discharge mosfet circuit
    Text: ^Rectifier I“ R D esign T ips DT 94-8 INTERNATIONAL RECTIFIER-APPLICATIONS ENG.-233 KANSAS ST. • EL SEGUNDO, CA. 9 0 245-TEL 310 322-3331 • FAX (310)322-3332 REVERSE BATTERY PROTECTION WITH HEXFETs DOUBLES BATTERY LIFE Introduction In low voltage applications, the widely used reverse battery


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    PDF 90245-TEL IRF7604 IRF7601 IRF7401 150min. IRLML 10BQ015 10BQ040 IRLML2402 ENG233 rapid discharge mosfet circuit

    IN4148

    Abstract: Gate Drive Characteristics AN-937A Isolated mosfet gate drive circuit rectifier design international rectifier application note AN937A Rectifier application note high side drive high side mosfet drive
    Text: International [»»¡Rectifier. DT 94-12 INTERNATIO NAL RECTI FIER • A PPLIC A TIO N S ENG. • 233 K A N S A S ST. • ELSEG UNOO , C A . 9 0 2 4 5 • TEL 310 322 3331 • FA X (310)322-3332 Optically Isolated Gate Drive Circuit by Jamie Catt Features:


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    PDF AN-937A: IN4148 Gate Drive Characteristics AN-937A Isolated mosfet gate drive circuit rectifier design international rectifier application note AN937A Rectifier application note high side drive high side mosfet drive

    irf1010 applications

    Abstract: IRF1010 IRFZ34N for irfz34n IRF1010N IRFZ34 replacement guide irfz34 mosfets *rfz34n
    Text: International T \ ¥7 T t t ic 1 H R e d i f i e r U E M l j l l 1 1 F !^ OT« INTERNA TIO NAL R E C T IF IE R C O R P. A PPLIC A TIO N S ENG. 233 KANSAS ST., EL SEGUNDO, CA 90245 TEL 310 322-3331 FAX (310)322-3332 IR ’S NEW FIFTH GENERATION PO W ER MOSFETS:


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    PDF IRFZ34N IRF1010N 390nC 540nC IRF1010 IRF1010N irf1010 applications for irfz34n IRFZ34 replacement guide irfz34 mosfets *rfz34n

    IRF470

    Abstract: LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740
    Text: International d iiRectifier D e sig n T ip s IN TE R N A TIO N A L R E C TIFIER • A P P LIC A T IO N S ENG. - 23 3 K AN S A S ST • E LS E G U N D O , CA. 9 0 2 4 5 - TE L 310 322-3331 • F A X (310)322-3332 LOW GATE CHARGE HEXFETS SIMPLIFY GATE DRIVE AND LOWER COST


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    PDF 90245-TEL AN-944A: AN-937B: IRF470 LRF740 IR2110 equivalent IR2110 gate driver for mosfet h bridge irf740 IRF470 mosfet 1rf740 IR2112 equivalent power MOSFET IRF740 driver circuit gate drive circuit for power MOSFET IRF740

    scr gate driver ic

    Abstract: ic 555 timer gate drive scr scr driver ic for rectifier 3 phase T106-26 IR2151 DT 94-3 ic 555 timer gate drive mosfet electronic ballast with 555 ic igbt driver with 555 timer RC snubber mosfet design ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn
    Text: s s D esig n T ips D T 94-9 IX T K K N A T IO N A I. K l.C t J lU .R CORI*. A IT I.1 C A T 1 0N S K \ ;. 233 K A N S A S Vi'. I I. S K U N D O . C A 911245 I VI . <310>322-333l 1 A \ <.U 11 322-3332 MAXIMIZING THE LATCH IMMUNITY OF THE IR2151 & IR2152 IN BALLAST APPLICATIONS


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    PDF UHMJ22-333I JIWJ22-3JJ2 IR2151 IR2152 IR2151 scr gate driver ic ic 555 timer gate drive scr scr driver ic for rectifier 3 phase T106-26 IR2151 DT 94-3 ic 555 timer gate drive mosfet electronic ballast with 555 ic igbt driver with 555 timer RC snubber mosfet design ELECTRONIC BALLAST 4 LAMP SCHEMATIC npn

    irfp321

    Abstract: IRFP320 IRFP323 IRFP322 mosfet p.321 samsung tv
    Text: "OT^JT-" 7964 142 SAMSUNG SEMI CONDUCTOR. .INC 98D 05189 D e | TlbMlMS DOOSlflT S I N-CHANNEL POWER MOSFETS •' IRFP320/321/322/323 FEATURES • LowRDS{on • • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


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    PDF IRFP320/321/322/323 IRFP320 IRFP321 IRFP322 IRFP323 00GS435 irfp321 mosfet p.321 samsung tv

    fd320

    Abstract: No abstract text available
    Text: 2 HARRIS IRFD320/321/322/323 IRFD320R/321R/322R/323R N-Channel Power MOSFETs Avalanche Energy Rated* A u g u st 1991 Features Package 4-P IN DIP • 0.5A and 0.4A, 350V - 400V TOP VIEW • rDS(on = 1-8n and 2 .5 fi • Single Pulse Avalanche Energy Rated*


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    PDF IRFD320/321/322/323 IRFD320R/321R/322R/323R IRFD320, IRFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, IRFD322R, IRFD323R fd320

    FD-321

    Abstract: No abstract text available
    Text: • 43D2271 005*4125 fili ■ OR HARRIS HAS IR FD 320/321/322/323 IRFD320R/321R /322R /323R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features • Package 4 - P IN D IP 0.5A and Q.4A, 350V - 400V T O P VIE W • rDS on = 1-8H and 2 .5 fl


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    PDF 43D2271 IRFD320R/321R /322R /323R IRFD320, 1RFD332, IRFD322, IRFD323 IRFD320R, IRFD332R, FD-321