Untitled
Abstract: No abstract text available
Text: Technical Data Sheet PIM Master MW82119B Passive Intermodulation Analyzer with Site Master™ Cable & Antenna Analyzer Option Introduction Anritsu introduces the first fully integrated Passive Intermodulation PIM Analyzer plus Cable and Antenna Analyzer (Option 331) suitable for
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MW82119B
MW82119B
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phototransistor 650 nm
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
phototransistor 650 nm
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transistor d-331
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
transistor d-331
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phototransistor 650 nm
Abstract: phototransistor peak 550 nm
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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331-JK
Q65110A2821
2006-0y
phototransistor 650 nm
phototransistor peak 550 nm
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Untitled
Abstract: No abstract text available
Text: SMT Multi TOPLED Lead Pb Free Product - RoHS Compliant SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender (635 nm) und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar
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circuit diagram for audible thermometers
Abstract: induction furnace circuit diagram Pyropen peak and hold diesel peak hold diesel Raytek temperature raytek Calex testo rs232 cable RAYTEK MX4
Text: Issued March 2001 284-3017 Data Pack A Infra-red Temperature Measurement Data Sheet RS stock nos. 254-112, 290-2526,238-4451, 288-9518, 263-9688, 264-6579, 330-7679, 341-3493, 344-3488, 331-7468, 341-5411,341-5427, 315-3422, 373-8461, 373-8483, 373-8499, 373-8506, 358-8474, 358-8496,358-8503,
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transistor d 331
Abstract: D F 331 TRANSISTOR d 331 TRANSISTOR equivalent switching transistor 331 Q62702-P1634 phototransistor 650 nm phototransistor peak 550 nm transistor d 331 data c 331 transistor transistor C 331
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale Features • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten
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331-JK
Q62702-P1634
transistor d 331
D F 331 TRANSISTOR
d 331 TRANSISTOR equivalent
switching transistor 331
Q62702-P1634
phototransistor 650 nm
phototransistor peak 550 nm
transistor d 331 data
c 331 transistor
transistor C 331
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transistor h 331
Abstract: c 331 transistor 331 transistor switching transistor 331 phototransistor 650 nm transistor 331 d 331 Transistor Q62702-P1634 phototransistor 550 nm phototransistor peak 550 nm
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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331-JK
Q62702-P1634
GPLY6924
transistor h 331
c 331 transistor
331 transistor
switching transistor 331
phototransistor 650 nm
transistor 331
d 331 Transistor
Q62702-P1634
phototransistor 550 nm
phototransistor peak 550 nm
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TXS2-L2-H-6V
Abstract: TXS2-12V TXS2-24V TXS2-H-12V TXS2-H-24V TXS2-L-12V TXS2-L2-12V TXS2-L2-24V TXS2-L-24V TXS2-L-H-12V
Text: TXS.fm Page 167 Wednesday, April 25, 2001 9:40 PM TESTING TX-S RELAYS SMALL POLARIZED RELAY WITH HIGH SENSITIVITY 50mW 15 .591 FEATURES 7.4 .291 8.2 .323 15 .591 7.4 .291 8.4 .331 SA type mm inch Outstanding surge resistance Surge withstand between open contacts:
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fototransistor
Abstract: phototransistor peak 550 nm fototransistor led
Text: 2009-03-05 SMT Multi TOPLED SMT Multi TOPLED Version 1.0 SFH 331 Features: Besondere Merkmale: • SMT package with red emitter 635 nm and Si-phototransistor • Suitable for SMT assembly • Available on tape and reel • Emitter and detector can be controlled separately
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331-JK
Q65110A2821
D-93055
fototransistor
phototransistor peak 550 nm
fototransistor led
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phototransistor 650 nm
Abstract: Q62702-P1634 fototransistor led c 331 transistor transistor d 331 331 transistor
Text: SMT Multi TOPLED SFH 331 Wesentliche Merkmale • SMT-Gehäuse mit rotem Sender 635 nm und Si-Fototransistor • Geeignet für SMT-Bestückung • Gegurtet lieferbar • Sender und Empfänger getrennt ansteuerbar • Geeignet für IR-Reflow Löten Features
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Q62702-P1634
OHF01924
GPL06924
phototransistor 650 nm
Q62702-P1634
fototransistor led
c 331 transistor
transistor d 331
331 transistor
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SGRAM
Abstract: ddr SGRAM 1993 synchronous dram jedec dram ddr 1997
Text: Memory Application Team Tel: 82-331-209-5371 Fax: 82-2-760-7990 GRAPHIC MEMORY APPLICATION NOTE How to implement DDR SGRAM in Graphic System 1 General concept of DDR SGRAM DDR SGRAM stands for “Double Data Rate Synchronous GRAM”. The term “double data rate” can
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125MHz
SGRAM
ddr SGRAM
1993 synchronous dram jedec
dram ddr 1997
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LR26550
Abstract: TXS2-12V TXS2-24V TXS2-H-12V TXS2-H-24V TXS2-L2-H-12V TXS2-L2-H-24V TXS2-L-H-12V TXS2-L-H-24V double coil latching relays relay 48v dc
Text: SMALL POLARIZED RELAY WITH HIGH SENSITIVITY 50mW TM TX-S RELAYS UL File No.: E43149 CSA File No.: LR26550 7.4 .291 15 .591 8.2 .323 7.4 .291 15 .591 8.4 .331 SA type mm inch FEATURES TYPICAL APPLICATIONS High sensitivity • 50mW nominal operating power single side stable 1.5-12V
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E43149
LR26550
LR26550
TXS2-12V
TXS2-24V
TXS2-H-12V
TXS2-H-24V
TXS2-L2-H-12V
TXS2-L2-H-24V
TXS2-L-H-12V
TXS2-L-H-24V
double coil latching relays relay 48v dc
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relay 5v 5 pin
Abstract: TXS2-12V relay 12v 5 pin 5 pin relay 12v 5 pin relay data sheet 5 V DC RELAY 5v relay pin relay 6v 5 pin relay 12v dc relay 12v mA
Text: SMALL POLARIZED RELAY WITH HIGH SENSITIVITY 50mW TM TX-S RELAYS UL File No.: E43149 CSA File No.: LR26550 7.4 .291 15 .591 8.2 .323 7.4 .291 15 .591 8.4 .331 SA type mm inch FEATURES TYPICAL APPLICATIONS High sensitivity • 50mW nominal operating power single side stable 1.5-12V
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E43149
LR26550
relay 5v 5 pin
TXS2-12V
relay 12v 5 pin
5 pin relay 12v
5 pin relay data sheet
5 V DC RELAY
5v relay pin
relay 6v 5 pin
relay 12v dc
relay 12v mA
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TM4C1230E6PM
Abstract: RTCC active smd semiconductor components marking codes 2014
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1230E6PM
LM4F111E5QR)
RTCC
active smd semiconductor components marking codes 2014
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Untitled
Abstract: No abstract text available
Text: TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Tiva TM4C1230E6PM Microcontroller identical to LM4F111E5QR D ATA SH E E T D S -T M 4C 1230 E 6 P M - 1 4 6 0 2 . 2 6 4 8 S P M S 331 C o p yri g h t 2 0 07-2013 Te xa s In stru me n ts In co rporated Copyright
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TM4C1230E6PM
LM4F111E5QR)
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Untitled
Abstract: No abstract text available
Text: SMD SERIES WIRE WOUND SMD CHIP INDUCTORS Applications : ．Communication infrastructures Including xDSL and mobile base stations. ．Onboard automobile equipment Including car audio and ECU systems. ．Audio-visual equipment including TVs and VCRs. ．Other electronic equipment including HDDs and ODDs.
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5650VL
SMD4532VP
SMD5650V
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SMR 4000
Abstract: 495p topled SFH 4501
Text: IR-LUMINESZENZDIODEN INFRARED EMITTERS TYPENÜBERSICHT IR-L SUMMARY OF TYPES (I UMINESZENZDIODEN 1. Emitter in SMT NFRARED EMITTERS) 1. Emitters in SMT TOPLED SFH 420 / SFH 4211 / SFH 421 / SFH 4200 SMARTLED SFH 4000 / SFH 4010 / SFH 4020 SFH 4080 / SFH 4209 / SFH 4219
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S321RDB
Abstract: s 316 hwb S321HWB S315GWA 7 segment cc S511GWA infra red 11 pin 7 segment LED pin configuration s322 10NOPIN
Text: EVERLIGHT ELECTRONICS • BM D 3 M 15703 I ■ INFRA RED/SUPER-INFRARED LEDS J / - ^ j 00G D 002 3 ■ EVEC LED INDICATOR LAMPS 1 SILICON PIN PHOTODIODES PHOTO TRANSISTORS | 50 30 G IB f Jjîl jjfty “ ■ fl t 3 PT 331 C PT 202 C 7 - SEGMENT DIGIT DISPLAYS
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3M15703
S315GWA
S321RDB
s 316 hwb
S321HWB
S315GWA
7 segment cc
S511GWA
infra red
11 pin 7 segment LED pin configuration
s322
10NOPIN
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sb 050 D 331
Abstract: Transistor sb 050 D
Text: SLOTTED OPTICAL SWITCH OPTOELECTRONICS QVE11233 PACKAGE DIMENSIONS 175 4 45’ L 250 (6 35 I_ — r* 331 (6 3S) .071 (1.70) J_ _ Lead spacing .300". Gap width of .150". Printed circuit board mounting. 2 mm aperture width. 350 <8 SB) MIN J_ _ _ •SEE NOTE 3
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QVE11233
QVE11233
ST2176
sb 050 D 331
Transistor sb 050 D
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540-99-044-24-000
Abstract: Brass QQ-B-626 200JW ZL 264
Text: BBEEIIDIB • Series 540 PLCC sockets are designed to accept JEDEC type MO 047 leaded plastic substrates. THROUGH BOARD MOUNT .047 MIN. .331 MAX. z z l Series 540 SPECIALTY PRODUCTS PLCC Sockets For Through Board Mount T • Body has polarizing features for both substrate and socket
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ti771
0GD072
540-99-044-24-000
Brass QQ-B-626
200JW
ZL 264
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Untitled
Abstract: No abstract text available
Text: • b427525 O O ^ O il *=331 B i N E C E PPD75036 Family JUPD75028/036/P036 4-Bit, General-Purpose Microcontrollers With A/D Converter NEC Electronics Inc. March 1994 Description The ¿/PD75036 family of high-performance 4-bit single chip CMOS microcontrollers includes the following
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b427525
PPD75036
JUPD75028/036/P036)
/PD75036
D75028
pPD75036
JPD75P036
768-kHz
060AB
49NR-6SQB
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7032S
Abstract: pf8282a
Text: Index J u n e 1996 Numerics B 3.3-V devices C onfiguration EPROM devices 393 F L EX 8000 devices 121 M A X 7000 devices 331 selection guide 26 3 .3 -V /5 .0 -V operation C onfiguration EPRO M devices 394 B & C M icrosystem s, Inc. 591 BBS 708 BitBlaster Serial D ow nload Cable
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Untitled
Abstract: No abstract text available
Text: SLOTTED OPTICAL SWITCH 0PTOELECT H011CS QVE11233 DESCRIPTION The QVE11233 is designed to allow the user maximum flexibility in applications. Each switch consists of an infrared emitting diode facing an NPN phototransistor across a .150" 3.81 mm gap. FEATURES
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H011C
QVE11233
QVE11233
ST2176
74bbA51
0D0b354
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