Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    333MM Search Results

    SF Impression Pixel

    333MM Price and Stock

    Cornell Dubilier Electronics Inc 333MMR400K

    CAP FILM 0.033UF 10% 400VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 333MMR400K Bulk 27,438 1
    • 1 $0.46
    • 10 $0.272
    • 100 $0.1746
    • 1000 $0.12317
    • 10000 $0.10231
    		Buy Now
    Mouser Electronics 333MMR400K 6,242
    • 1 $0.44
    • 10 $0.187
    • 100 $0.128
    • 1000 $0.114
    • 10000 $0.089
    		Buy Now
    Verical 333MMR400K 14,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.09
    		Buy Now

    Cornell Dubilier Electronics Inc 333MMR630K

    CAP FILM 0.033UF 10% 630VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 333MMR630K Bulk 11,748 1
    • 1 $0.56
    • 10 $0.336
    • 100 $0.2183
    • 1000 $0.15597
    • 10000 $0.13066
    		Buy Now
    Mouser Electronics 333MMR630K 4,005
    • 1 $0.52
    • 10 $0.247
    • 100 $0.219
    • 1000 $0.149
    • 10000 $0.129
    		Buy Now
    Verical 333MMR630K 7,926 582
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1257
    • 10000 $0.1187
    		Buy Now
    333MMR630K 2,000 61
    • 1 -
    • 10 -
    • 100 $0.1528
    • 1000 $0.109
    • 10000 $0.109
    		Buy Now
    333MMR630K 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.109
    		Buy Now
    Arrow Electronics 333MMR630K 2,000 18 Weeks 1
    • 1 $0.4512
    • 10 $0.2322
    • 100 $0.1528
    • 1000 $0.109
    • 10000 $0.109
    		Buy Now
    Newark 333MMR630K Bulk 7,936 1
    • 1 $0.086
    • 10 $0.086
    • 100 $0.086
    • 1000 $0.086
    • 10000 $0.086
    		Buy Now
    TTI 333MMR630K Bulk 17,000 500
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.148
    • 10000 $0.124
    		Buy Now

    Cornell Dubilier Electronics Inc 333MMR250K

    CAP FILM 0.033UF 10% 250VDC RAD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 333MMR250K Bulk 744 1
    • 1 $0.52
    • 10 $0.311
    • 100 $0.2009
    • 1000 $0.1428
    • 10000 $0.11923
    		Buy Now
    Mouser Electronics 333MMR250K
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    3M Interconnect 233-3MMX55M

    TAPE MASKING GREEN 0.12"X60YDS
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey 233-3MMX55M Bulk 12 1
    • 1 $8.61
    • 10 $6.509
    • 100 $5.4174
    • 1000 $4.19007
    • 10000 $3.96691
    		Buy Now

    Kyocera AVX Components CKR22BX333MM

    CAP CER 0.033UF 50V BX 2-DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey CKR22BX333MM Bulk 200
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.4529
    • 10000 $3.4529
    		Buy Now
    Find more 333MM price and stock on Findchips.com

    333MM Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    333MMR250K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 0.033UF 10% 250VDC RAD Original PDF
    333MMR400K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 0.033UF 10% 400VDC RAD Original PDF
    333MMR630K Illinois Capacitor Capacitors - Film Capacitors - CAP FILM 0.033UF 10% 630VDC RAD Original PDF

    333MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fairchild MLP8

    Abstract: max 232 8-soic
    Text: High-Speed, Low-Side Gate Drivers Fairchild’s Offering The FAN3000 series low-side gate drivers offer an unequaled combination of higher performance, smaller size, and more input options for driving N-channel power MOSFETs and IGBTs: • Industry’s smallest packages 232 and 333mm MLP


    Original     		PDF FAN3000 333mm fairchild MLP8 max 232 8-soic

    Untitled

    Abstract: No abstract text available
    Text: 3757 W. Touhy Ave., Lincolnwood, IL 60712 847 675-1760 • (847) 673-2850 · www.illcap.com +105°C Small Size Epoxy Dipped Radial Lead Metallized Polyester Capacitors Part Number: 333MMR400K This part is RoHS compliant Electrical Specifications Capacitance: 0.033uF


    Original     		PDF 333MMR400K 033uF

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		PDF MMBTA65 PZTA65 OT-23 OT-223 MPSA64 OT-223 MPSA65 CBVK741B019 F63TNR MMBTA65 PN2222N PZTA65 bel 188 transistor

    Si4450DY

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si4450DY CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    2502P

    Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
    Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF SI6926DQ 2502P CBHK741B019 F63TNR FDW2502P SI6926DQ

    SI9955DY

    Abstract: fairchild NDS 1182
    Text: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		PDF Si9955DY fairchild NDS 1182

    transistor 2N5461

    Abstract: No abstract text available
    Text: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		PDF 2N5460 2N5461 2N5462 MMBF5460 MMBF5461 2N5462 transistor 2N5461

    FDS9953A

    Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
    Text: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive


    Original     		PDF FDS9953A FDS9953A 9953A CBVK741B019 F011 F63TNR F852 L86Z

    FDC6331L

    Abstract: SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR
    Text: FDC6331L Integrated Load Switch Features General Description • –2.8 A, –8 V. RDS ON = 55 mΩ @ V GS = –4.5 V RDS(ON) = 70 mΩ @ V GS = –2.5 V RDS(ON) = 100 mΩ @ V GS = –1.8 V This device is particularly suited for compact power management in portable electronic equipment where


    Original     		PDF FDC6331L FDC6331L SSOT-6 ZENER SINGLE COLOR CODE FDC633N 125OC AN1030 CBVK741B019 F63TNR

    FDW2501NZ

    Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
    Text: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDW2501NZ FDW2501NZ 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P

    2506p

    Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
    Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate


    Original     		PDF FDW2506P 2506p diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P

    D 1437 transistor

    Abstract: CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
    Text: SOIC-16 Tape and Reel Data SOIC 16ld s Packaging Configuration: Figure 1.0 N Packaging Description: ELECTROSTATIC SENSITIVE DEVICES DO NOT SHIP O R STORE NEAR STRONG ELECTROSTATIC ELECTROM AGNETIC, MAGNETIC OR RADIOACTIVE FIELDS T NR DATE PT NUM BER PEEL STRENGTH M IN _gms


    Original     		PDF SOIC-16 330cm D 1437 transistor CBVK741B019 F63TNR L86Z NDM3000 NDM3001

    F63TNR

    Abstract: FDFS2P102A soic-8 33a
    Text: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.


    Original     		PDF FDFS2P102A F63TNR FDFS2P102A soic-8 33a

    diode sod123 W1

    Abstract: CBVK741B019 F63TNR MMSZ5221B sod123 E2
    Text: SOD-123 Tape and Reel Data SOD123 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOD123 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		PDF OD-123 OD123 177cm 330cm diode sod123 W1 CBVK741B019 F63TNR MMSZ5221B sod123 E2

    rf transistor mark code H1

    Abstract: CBVK741B019 F63TNR MMBTH24 MPSH11 MPSH24 PN2222N
    Text: MPSH24 / MMBTH24 MPSH24 MMBTH24 C E C B TO-92 B SOT-23 E Mark: 3A NPN RF Transistor This device is designed for common-emitter low noise amplifier and mixer applications with collector currents in the 100 µA to 20 mA range to 300 MHz, and low frequency drift commonbase VHF oscillator applications with high output levels for


    Original     		PDF MPSH24 MMBTH24 MPSH24 OT-23 MPSH11 rf transistor mark code H1 CBVK741B019 F63TNR MMBTH24 MPSH11 PN2222N

    SSOT-3

    Abstract: CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3
    Text: FSB649 FSB649 C E B SuperSOTTM-3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process NC. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF FSB649 SSOT-3 CBVK741B019 F63TNR FSB649 MMSZ5221B SuperSOTTM -3

    FDS6688

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
    Text: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDS6688 FDS6688 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56

    FDS9945

    Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
    Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		PDF FDS9945 FDS9945 CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
    Text: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.


    Original     		PDF FDS3812 CBVK741B019 F011 F63TNR F852 FDS3812 FDS9953A L86Z

    CBVK741B019

    Abstract: F011 F63TNR F852 FDS6692 FDS9953A L86Z
    Text: FDS6692 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		PDF FDS6692 CBVK741B019 F011 F63TNR F852 FDS6692 FDS9953A L86Z

    2502P

    Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
    Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains


    Original     		PDF FDW2507NZ 2502P CBHK741B019 F63TNR FDW2502P FDW2507NZ

    F852 transistor

    Abstract: F852 CBVK741B019 F63TNR PN2222A
    Text: SOT-223 Tape and Reel Data SOT-223 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative carbon filled polycarbonate resin. The cover tape is a multilayer film (Heat Activated


    Original     		PDF OT-223 330cm 177cm F852 transistor F852 CBVK741B019 F63TNR PN2222A

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 333MMR250K t S M ALL SIZE EPOXY DIPPED RADIAL LEAD M ETALLIZED POLYESTER CAPACITO RS Parts are RoHS com pliant Date code w hen parts became RoHS: 14 ELECTRICAL SPECIFICATIONS C apacitance: 0.033 uF T ole ra n ce: -10 % . +10 % Dissipation Factor: 0.01 Max at 1000 Hz and 25°C


    OCR Scan     		PDF 333MMR250K

    Untitled

    Abstract: No abstract text available
    Text: PART NUMBER: 333MMR250K t GENERAL PURPOSE FILM P a rts a re R oH S c o m p lia n t D a te c o d e w h e n p a rts b e c a m e RoHS: 14 FEATURES Radial lead, self healing metallized polyester, small size ELECTRICAL SPECIFICATIONS C apacitance: 0.033 uF T ole ra n ce: -10 % . +10 %


    OCR Scan     		PDF 333MMR250K 125at