2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6926DQ
Text: SI6926DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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SI6926DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6926DQ
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FDW2501NZ
Abstract: 2501NZ DIODE marking S4 06 2502P CBHK741B019 F63TNR FDW2502P
Text: FDW2501NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2501NZ
FDW2501NZ
2501NZ
DIODE marking S4 06
2502P
CBHK741B019
F63TNR
FDW2502P
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2506p
Abstract: diode s4 53a 2506p marking FDW2502P 2502P CBHK741B019 F63TNR FDW2506P
Text: FDW2506P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2506P
2506p
diode s4 53a
2506p marking
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2506P
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P FDW2507NZ
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
2502P
CBHK741B019
F63TNR
FDW2502P
FDW2507NZ
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MOSFET TSSOP-8
Abstract: 2502P 2507N CBHK741B019 F63TNR FDW2502P FDW2507N Fairchild MOSFET TSSOP-8 dual n-channel
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
MOSFET TSSOP-8
2502P
2507N
CBHK741B019
F63TNR
FDW2502P
FDW2507N
Fairchild MOSFET TSSOP-8 dual n-channel
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DIODE S4 75a
Abstract: No abstract text available
Text: FDW2507NZ Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507NZ
DIODE S4 75a
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Si6435DQ
Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Text: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6435DQ
2502P
CBHK741B019
F63TNR
FDW2502P
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FDW2502P
Abstract: 2502P CBHK741B019 F63TNR FDW252P
Text: FDW252P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW252P
FDW2502P
2502P
CBHK741B019
F63TNR
FDW252P
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DIODE marking S4 06
Abstract: MOSFET TSSOP-8 S4 DIODE schottky 2502P CBHK741B019 F63TNR FDW2502P FDW6923
Text: FDW6923 P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It is combined with a low forward drop Schottky diode which is isolated from the
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FDW6923
DIODE marking S4 06
MOSFET TSSOP-8
S4 DIODE schottky
2502P
CBHK741B019
F63TNR
FDW2502P
FDW6923
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P SI6966DQ Diode S4 55a
Text: SI6966DQ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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SI6966DQ
2502P
CBHK741B019
F63TNR
FDW2502P
SI6966DQ
Diode S4 55a
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DIODE marking S4 97
Abstract: No abstract text available
Text: Si6963DQ Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si6963DQ
DIODE marking S4 97
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Untitled
Abstract: No abstract text available
Text: FDW2507N Dual N-Channel 2.5V specified PowerTrench MOSFET General Description Features This dual N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced PowerTrench process to optimize the RDS ON @ VGS = 2.5v on special TSSOP-8 lead frame with all the drains
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FDW2507N
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Untitled
Abstract: No abstract text available
Text: FDW258P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW258P
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Untitled
Abstract: No abstract text available
Text: FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDW262P
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FDW2502P
Abstract: 2502P CBHK741B019 F63TNR FDW2520C
Text: FDW2520C Complementary PowerTrench MOSFET General Description Features This complementary MOSFET device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
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FDW2520C
FDW2502P
2502P
CBHK741B019
F63TNR
FDW2520C
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Untitled
Abstract: No abstract text available
Text: Si6953DQ Dual 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6953DQ
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Untitled
Abstract: No abstract text available
Text: FDW2508P Dual P-Channel 1.8 V Specified PowerTrench MOSFET General Description Features This P-Channel –1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
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FDW2508P
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Untitled
Abstract: No abstract text available
Text: Si6467DQ P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si6467DQ
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Diode S4 55a
Abstract: No abstract text available
Text: FDW2503NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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FDW2503NZ
Diode S4 55a
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Untitled
Abstract: No abstract text available
Text: FDW262P 20V P-Channel PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
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FDW262P
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F63TNR
Abstract: 2502P CBHK741B019 FDW2502P L86Z
Text: TSSOP 8lds Tape and Reel Data TSSOP(8lds) Packaging Configuration: Figure 1.0 ATTENTION OBSERVEPRECAUTIONS FOR HANDLING ELECTROSTATIC SENSITIVE DEVICES Packaging Description: Embossed ESD Marking TION ATTEN IONS RECAUT LING RVEPHA OBSEFO R NDTATIC TROSITIVE
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P Si6933DQ s4 35 diode marking code
Text: Si6933DQ Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage
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Si6933DQ
2502P
CBHK741B019
F63TNR
FDW2502P
s4 35 diode marking code
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2502P
Abstract: CBHK741B019 F63TNR FDW2502P Si6415DQ
Text: Si6415DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive
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Si6415DQ
2502P
CBHK741B019
F63TNR
FDW2502P
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6463 tube
Abstract: 2502P CBHK741B019 F63TNR FDW2502P Si6463DQ
Text: Si6463DQ P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate
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Si6463DQ
6463 tube
2502P
CBHK741B019
F63TNR
FDW2502P
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