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Catalog Datasheet	MFG & Type	PDF	Document Tags
33L2600 Abstract: No abstract text available Text: VDSM = 2800 V ITAVM = 3740 A ITRMS = 5880 A ITSM = 60000 A VT0 = 0.95 V rT = 0.100 mΩ Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	5SYA1011-03 33L2800 33L2800 33L2600 33L2200 67xVDRM CH-5600
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.1 mΩ Ω Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	33L2800 5SYA1011-03 33L2600 33L2200 CH-5600
33L2600 Abstract: No abstract text available Text: Key Parameters VDSM = 2800 ITAVM = 3300 ITRMS = 5180 ITSM = 60000 VT0 = 0.95 rT = 0.100 V A A A V mΩ Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA 1011-02 May, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	PDF	33L2800 33L2800 33L2600 33L2200 67xVDRM CH-5600
ABB thyristor 5 Abstract: 33L2800 Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 2800 V 3740 A 5880 A 60000 A 0.95 V 0.100 mΩ Ω Phase Control Thyristor 5STP 33L2800 Doc. No. 5SYA1011-03 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	PDF	33L2800 5SYA1011-03 33L2800 33L2600 33L2200 CH-5600 ABB thyristor 5