RFMA2124-2W
Abstract: No abstract text available
Text: RFMA2124-2W-P3 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 01/09/2007 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm
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RFMA2124-2W-P3
-39dBc
20dBm
RFMA2124
RFMA2124-2W
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Untitled
Abstract: No abstract text available
Text: RFMA2124-2W 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 10/25/2006 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm
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RFMA2124-2W
-39dBc
20dBm
RFMA2124
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RFMA2124-2W
Abstract: power amplifier mmic
Text: RFMA2124-2W 21.2 – 23.6 GHz Power Amplifier MMIC UPDATED: 07/28/2006 FEATURES • • • • 21.2– 23.6GHz Operating Frequency Range 31.0dBm Output Power at 1dB Compression 22dB Typical Power Gain @ 1dB Gain Compression -39dBc Typical OIM3 @ each tone Pout 20dBm
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RFMA2124-2W
-39dBc
20dBm
RFMA2124
RFMA2124-2W
power amplifier mmic
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Untitled
Abstract: No abstract text available
Text: Preliminary Product Description Sirenza Microdevices’ SZA-3044 is a high linearity class AB Heterojunction Bipolar Transistor HBT amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology
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SZA-3044
10mil
EDS-103989
SZA-3044"
SZA3044
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8G436
Abstract: No abstract text available
Text: K0!=3DBCAH0 C0=30A30E10G0D10 >>C?A8=C K0)8G0)83430)784;38=6 K0)054CH064=2H04AC85820C8>=B K09F,0>A0D9, 0!=?DC &60"0*&20 & ,&-21020D//+)$"2).-1 *4;42>< 0C02>< 'A>24BB0>=CA>; '. EC-0)4A84B )8=6;400=30 D0;0&DC?DC0 EC-0 9 0>=E4AC4AB '. EC-0 40CDA4B00=304=458CB
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30A30E10G0D10
054CH0
4AC85820C8>
-21020D//+
24BB0
4A84B
40CDA4B00
458CB
40CDA4B
8G436
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8C430
Abstract: 8G435 CD50B
Text: K0 =3DBCAH0 C0=30A30CM0G0CM00 >>C?A8=C K08E,0>A0C8,0 =?DC K0'8=030)DA50240$>D=C0$>34;B K0 558284=2H0D?0C>02 K0 8G430BF8C278=60 A4@D4=2H "10 ,&".0"$ ").-010A+'% .%*)*4;42><A0C2>< 'A>24BB0>=CA>; -8A4;4BB0%4CF>A: $40BDA4<4=C030*4BC '.C0)4A84B
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30A30CM0G0CM00
DA50240$
8G430BF8C278
-010A+
24BB0
4A84B
40CDA4B00
458CB
40CDA4B
DA50240<
8C430
8G435
CD50B
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Untitled
Abstract: No abstract text available
Text: RFPA1002 RFPA1002 9.8GHz to 13.5GHz High Linearity 9.8GHz TO 13.5GHz HIGH LINEARITY POWER AMPLIFIER Package: Ceramic QFN, 40-pin, 6mm x 6mm x 0.95mm 40 Features 39 38 37 36 Vd1 35 Vg2 34 33 Vd2a 32 31 1 30 2 GND 29 3 28 RFin Frequency Range: 9.8GHz to
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RFPA1002
40-pin,
17dBm
50dBc
22dBm
39dBc
25dBm
32dBc
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Untitled
Abstract: No abstract text available
Text: AIM & THURLBY THANDAR INSTRUMENTS TGR6000 6GHz RF signal generator - CW with sweep 10MHz to 6,000MHz at -110Bm to +7dBm High purity output with low phase noise Custom level trim of up to 100 points Fast full-range sweep using step or list modes Remote control via RS232, USB, GPIB and LAN interfaces
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TGR6000
10MHz
000MHz
-110Bm
RS232,
TGR6000
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transistor 10mhz 60w
Abstract: UGF21060 UGF21060F UGF21060P mosfet class ab rf
Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
700mA
30kHz
2140MHz
84MHz
10MHz
UGF21060
transistor 10mhz 60w
UGF21060F
UGF21060P
mosfet class ab rf
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Cree Microwave
Abstract: UGF21060 UGF21060F UGF21060P
Text: UGF21060 60W, 2.17GHz, 28V, Broadband RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications at UMTS frequency bands from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA, W-CDMA, GSM and Multi-Carrier power amplifiers in class
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UGF21060
17GHz,
MRF21060/MRF21060S.
UGF21060
Cree Microwave
UGF21060F
UGF21060P
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Untitled
Abstract: No abstract text available
Text: 8885D:8C3:7;0<13082><93C< B6 C D K0 A& 0=30 ><?;80=C0#>34;B K0,8340'0=6400 =?DC K0#43820;04AC85820C8>=B ':0#3,'50 ' .'/54010E11-+%#5+0/4 #43820;60 =3DBCA80;0><?DC8=66 "8540(284=24B090"01>A0C>AH )#F70(4A84B EA,0C>0F,0#43820;0070 GC4A=0;0&>F4A0(D?;84B
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8885D
4AC85820C8>
/54010E11-+
3DBCA80
24B090
4A84B
40CDA4B00
458CB
40CDA4B
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RF FET transistor
Abstract: fet transistor rf
Text: MAPL-000822-002PP LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V Discontinued For Reference Only Product Image Designed for broadband commercial applications up to 2.2GHz • • • High gain, high efficiency and high linearity Ease of design for gain and insertion phase flatness
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MAPL-000822-002PP
17GHz,
28Vdc
28dBm
-39dBc
11GHz
960MHz,
26Vdc,
960MHz
QFN-16
RF FET transistor
fet transistor rf
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RF7321
Abstract: band21 RFMD LTE Band 40 rf732 RF7321PCBA-410 LTE RFMD mems matching network RFMD PA LTE
Text: RF7321 3V LTE Band 11, 21 Linear PA Module Package Style: Module, 10-Pin, 3mm x 3mm x 0.8mm Features Fully Compliant to LTE Modulation LTE Bands 11, 21 Best-in-Class Efficiency 47%, +28.5dBm Rel 99 output power High Power Gain : 28dB
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RF7321
10-Pin,
-38dBc
-39dBc
RF7321
203mm
330mm
025mm
DS120906
band21
RFMD LTE Band 40
rf732
RF7321PCBA-410
LTE RFMD mems matching network
RFMD PA LTE
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transistor z9
Abstract: transistor Z2 RT240PD cdma repeater circuit TRANSISTOR Z4 B 1449 transistor transistor z5 RT240 gsm wcdma repeater 1608 B 100NF
Text: Preliminary 10W Power Transistor RT240PD Product Features Application • High Output Power P1dB = 40dBm Typ. @2.14GHz • High Efficiency • High Power Gain G1dB = 17dB(Typ.)@900MHz G1dB = 13dB(Typ.)@2.14GHz • High Linearity • Hermetically sealed package
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RT240PD
40dBm
14GHz
900MHz
IMT-2000
RT240PD
IMT-2000,
14iminary
transistor z9
transistor Z2
cdma repeater circuit
TRANSISTOR Z4
B 1449 transistor
transistor z5
RT240
gsm wcdma repeater
1608 B 100NF
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Untitled
Abstract: No abstract text available
Text: 19-4588; Rev 0; 4/09 KIT ATION EVALU E L B AVAILA 2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver The MAX2839AS direct conversion, zero-IF, RF transceiver is designed specifically for 2.3GHz to 2.7GHz 802.16e MIMO mobile WiMAX systems. The device incorporates one transmitter and two receivers, with > 40dB isolation between each receiver. The MAX2839AS
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MAX2839AS
MAX2839AS
W733A5
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MAX2838
Abstract: mobile jammer mobile signal jammer rf traNsmitter receiver 40mhz antenna wimax 3800 jammer circuit diagram mobile jammer circuit RF Transceiver mimo wimax spectrum mask 2048-FFT
Text: 19-1049; Rev 1; 8/08 3.3GHz to 3.9GHz Wireless Broadband RF Transceiver Features The MAX2838 direct-conversion, zero-IF, RF transceiver is designed specifically for 3.3GHz to 3.9GHz wireless broadband systems. The MAX2838 completely integrates all circuitry required to implement the RF
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MAX2838
mobile jammer
mobile signal jammer
rf traNsmitter receiver 40mhz
antenna wimax 3800
jammer circuit diagram
mobile jammer circuit
RF Transceiver mimo
wimax spectrum mask
2048-FFT
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BLC5G22LS-100
Abstract: BLC5G22-100 LDMOS LDMOS Technology for RF Power Amplifiers BLC5G22 metallization LDMOS digital BLF4G22-100 ldmos pa driver BLF5G22-180
Text: 5th Generation LDMOS Philips’ 0.4 µm technology for base station RF PAs sets the standard in W-CDMA amplifier efficiency For RF power amplifiers PAs and base station manufacturers, our 5th generation LDMOS technology is a major advance. This technology offers key advantages for
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AN1997
Abstract: APP1997 MAX2510
Text: Maxim > App Notes > WIRELESS, RF, AND CABLE Apr 28, 2003 Keywords: rf, phs, transceiver, wireless, rfic, spectrum APPLICATION NOTE 1997 500mW PHS Transmitter Meets Transient Spectrum Requirements with Edge Control Abstract: If the control signal's transition time is not controlled, the output spectrum of a 500mW PHS base
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500mW
MAX2510,
MAX2510
200mW
com/an1997
MAX2510:
AN1997,
APP1997,
AN1997
APP1997
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cdma power meter block diagram
Abstract: D-Sub 9-pin female connector RoHS E4418B E4440A IFR3414 agilent E4440A
Text: Power Amplifier RFP-0881-45-48GD Product Features Application • GaN on SiC + Doherty Technology • High Efficiency • Solid-state Linear Design • Suitable for CDMA / LTE • 50 Ohm Input/Output Impedance • High Reliability and Ruggedness • Built in Output Isolator
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RFP-0881-45-48GD
894MHz
25MHz
IS-95A,
IS-95A
cdma power meter block diagram
D-Sub 9-pin female connector RoHS
E4418B
E4440A
IFR3414
agilent E4440A
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marking 7W 66
Abstract: AN-UHF-105 RD07MUS2B transistor jc 817 AN-UHF-116 AN-UHF116 GP 830 diode diode gp 424 AN-900-041
Text: < Silicon RF Power MOS FET Discrete > RD07MUS2B RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W OUTLINE DRAWING RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications. 6.0+/-0.15
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
Oct2011
marking 7W 66
AN-UHF-105
transistor jc 817
AN-UHF-116
AN-UHF116
GP 830 diode
diode gp 424
AN-900-041
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RD07MUS2B
Abstract: RD07MUS2 RD07MUS diode gp 424 RD07M AN-VHF-046 AN-UHF-116 f763 AN-UHF-106 AN-VHF-053
Text: Silicon RF Power Semiconductors RD07MUS2B ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz RD07MUS2B is a MOS FET type transistor specifically designed for VHF/UHF/870MHz RF power amplifiers applications.
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RD07MUS2B
175MHz
527MHz
870MHz
RD07MUS2B
VHF/UHF/870MHz
175MHz)
527MHz)
870MHz)
RD07MUS2
RD07MUS
diode gp 424
RD07M
AN-VHF-046
AN-UHF-116
f763
AN-UHF-106
AN-VHF-053
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Untitled
Abstract: No abstract text available
Text: K0 =3DBCAH0 C0=30A30CE0&8=08?0&02:064 K0 8E40(83430(784;38=6 K0,8340'0=640EB0 =?DC K0D8D60F60BC60BF0+>;C0%DC?DCB K0&8=020(DA50240#>D=C0#>34;B *;0&4.*60 *,0*16503033/-(&6-215 4;42>< 0C02>< 02C>AH0DC><0C8>=020&A>24BB0>=CA>; &-AF0(4A84B (8=6;400=30D0;0%DC?DC0F,0
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30A30CE0
K0D8D60F60BC60BF0+
DA50240#
24BB0
4A84B
40CDA4B00
458CB
40CDA4B
8340A0
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Untitled
Abstract: No abstract text available
Text: 8885D:8C3:7;0<13082><93C< B6 C D K0 A& 0=30 ><?;80=C0#>34;B K0,8340'0=6400 =?DC K0#43820;04AC85820C8>=B ':0#3,'50 ' .'/54010E11-+%#5+0/4 #43820;60 =3DBCA80;0><?DC8=66 "8540(284=24B090"01>A0C>AH )#BBA70(4A84B A,0C>0BBA,0#43820;0070 GC4A=0;0&>F4A0(D?;84B
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8885D
4AC85820C8>
/54010E11-+
3DBCA80
24B090
4A84B
40CDA4B00
458CB
40CDA4B
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RF Transceiver mimo
Abstract: max2839 MAX2839AS mobile jammer mobile signal jammer WiMAX RF Transceiver mimo rf bpf s band 2.65 ghz to 2.70 ghz 23GHz filter MOBILE jammer circuit diagram MOTOROLA 7839
Text: 19-4588; Rev 1; 5/10 KIT ATION EVALU E L B AVAILA 2.3GHz to 2.7GHz MIMO Wireless Broadband RF Transceiver The MAX2839AS direct conversion, zero-IF, RF transceiver is designed specifically for 2.3GHz to 2.7GHz 802.16e MIMO mobile WiMAX systems. The device incorporates one transmitter and two receivers, with > 40dB isolation between each receiver. The MAX2839AS
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MAX2839AS
MAX2839AS
RF Transceiver mimo
max2839
mobile jammer
mobile signal jammer
WiMAX RF Transceiver mimo
rf bpf s band 2.65 ghz to 2.70 ghz
23GHz filter
MOBILE jammer circuit diagram
MOTOROLA 7839
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