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    3BS TRANSISTOR Search Results

    3BS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    3BS TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3865

    Abstract: 2N3233 2N1069 2N3239 2N3238 2N3236 2N3235 2N3232 2n3713 2N1488
    Text: 8365700 SOLID POWER CORP ‘SOLID POWER CORP 95C 0 0099 0 TDF|fi 3bS 7DD DOOODÌT b f TS POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c b o BV ceo BV ebo Ic V V V A V Sat Test Voltages Conditions VcE V be Ic Ib V V A A @ hFE MIN MAX Ic A


    OCR Scan     		A3tiS700 2N1069 2N1070 2N1487 2N1488 2N1489 2N1490 2N1702 2N2305 2N3232 2N3865 2N3233 2N3239 2N3238 2N3236 2N3235 2n3713 PDF

    AT-60585

    Abstract: AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor
    Text: HE W LET T-PACKARD/ CMPNTS blE D • 44475Ö4 □ D D tìflb4 3bS H H P A AT-60585 Up to 6 GHz Low Noise Silicon Bipolar Transistor T h a t HEW LETT mLEM PA C K AR D 85 Plastic Package Features • • Low Bias Current Operation Low Noise Figure: 1.4 dB typical at 1.0 GHz


    OCR Scan     		44475A4 AT-60585 AT-60585 AT60585 Silicon Bipolar Transistor Silicon Bipolar Transistor Hewlett-Packard 3BS transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEMI CONDUCTOR I Ordering n u m b e r: EN4188 CORP S3E ] • 7 cî tî 7 G 7 b G01G1SD 3bS ■ TS AJ | T—52—13—25 Monolithic Digital IC LB1855M No.4188 i 3-Phase Brushless Motor Driver The LB18S5M is a 3-phase brushless motor driver 1C ideally suited for use in VCR drum motor driver.


    OCR Scan     		EN4188 G01G1SD LB1855M LB18S5M DG10154 PDF

    7423PC

    Abstract: 00k3
    Text: NATIONAL SEflICOND { L O G I C } DEE D I bSGUEE □ □t>3bSö S 23 I T -^ -/r C O N N E C T IO N D IA G R A M P IN O U T A 54/7423 EXPANDABLE DUAL 4-IN PU T NOR GATE W ith Strobe O R D E R IN G C O D E : See Section 9 PIN PKG S OUT C O M M E R C IA L G RADE


    OCR Scan     		7423P 5423D 7423FC 5423FM 7423PC 00k3 PDF

    3BS transistor

    Abstract: marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W
    Text: BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor BC856W/BC857W/BC858W FEATURES z Ideally suited for automatic insertion. z Power dissipation. PC=200mW Pb Lead-free APPLICATIONS z General purpose switching and amplification application.


    Original     		BC856W/BC857W/BC858W 200mW) OT-323 BC856W BC857W BC858W 3BS transistor marking 3bs transistor 3bs 3bs marking code 3BS MARKING sot323 transistor marking BL SOT323 BC856W BC857W BC858W PDF

    Untitled

    Abstract: No abstract text available
    Text: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE MIN. DIM MAX. 7.4 7.8 B 10.5 10.8 C 2 .4 2.7 D 0.7 0.9 A 2 .2 5 TYP. E


    OCR Scan     		BD157, B0158 23B33T4 PDF

    3BS transistor

    Abstract: No abstract text available
    Text: BCR 400 Preliminary Data Active Bias Controller Characteristics • Supplies stable bias current even at low battery voltage and extreme ambient temperature variation • Low voltage drop of 0.7V Application notes • Stabilizing bias current of NPN transistors and FET's from


    OCR Scan     		200mA fl23SbOÂ 023SbDS 0235b05 3BS transistor PDF

    BD157

    Abstract: BD158
    Text: BD157, B0158 BDI5 7 ,158 NPN PLASTIC POWER TRANSISTORS Low Power Fast Switching, Output Stages for TV Radio and Audio Output Amplifiers PIN CONFIGURATION 1. EMITTER 2. COLLECTOR 3. BASE DIM MIN. MAX. A 7.4 7.8 B 10.5 10.8 C 2.4 2.7 D 0 .7 0.9 E F 2 .2 5 TYP.


    OCR Scan     		BD157, BD158 BDI57 23633T4 000120D BD157 BD158 PDF

    2SC509

    Abstract: 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology
    Text: 2/UD>PNPItr^2/?;i/»h5>5?^ PCTÄÄ ^ ^ L IC O N o & mantas m m o Audio Power Amplifier Applications b PNP EPITAXIAL TRANSISTOR (PCT PROCESS) Wl? v-y ^ 7 *-r; m 2SC509 i a v 7 V / v f y fri b -* -t ; 1 Watt Amplifier Applications Complementary to 2SC509 M ±


    OCR Scan     		2SC509 RH-16 2sa509 -30-SO 00X10Oxlmm 2SC509 2SA509 4687 transistor 2SA509-Y transistor 4687 2sa509 transistor 2SA509Y 2sc509 transistor RH-16 Produced by Perfect Crystal Device Technology PDF

    h 669A

    Abstract: 2SD1270 C-123 2SB945 2SD1271
    Text: 2SD1270 Power Transistors 2SD1270 Silicon NPN Epitaxial Planar Type Package Dim ensions Pow er Switching C om plem entary Pair with 2 S B 94 5 • Features • • • • 2.9max Low collector-em itter saturation voltage V ce <sao Good linearity of DC current gain (I i f e )


    OCR Scan     		2SB945 2SD1270 10MHz 2SD1271) tT32flSE h 669A 2SD1270 C-123 2SB945 2SD1271 PDF

    top marking 1B sot23

    Abstract: marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A top marking 1B sot23 marking 3bs 3bs marking code BC856-BC860 3BS MARKING MARKING 3gs marking 3Ls SOT23 3ks 3Fs marking transistor 3Fs sot23 PDF

    3BS transistor

    Abstract: S0642
    Text: rz 7 ^ 7# SGS-THOMSON R L ie r a « S 0 6 4 2 SMALL SIGNAL NPN TRANSISTOR Type Marking SO 642 N91 . SILICON EPITAXIAL PLANAR NPN TRANSISTOR . MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS . HIGH VOLTAGE TRANSISTOR FOR VIDEO AMPLIFIER


    OCR Scan     		S0692 OT-23 SC06960 S0642 OT-23 3BS transistor S0642 PDF

    2N4124

    Abstract: 2N4123 2N4125 2N4126
    Text: N AMER PHILIPS/DISCRETE bTE J> m bb53R31 0D2fllS2 42*1 IAPX Ü N 41Ü Ô 5 2N4124 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelopes, prim arily intended fo r low-power, small-signal audio­ frequency applications fo r consumer service.


    OCR Scan     		2N4124 2N4125 2N4126. 2N4123 2N4124 2N4126 PDF

    MARKING 3FS

    Abstract: marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OT323 MARKING 3FS marking 3bs BC846 Infineon BC857 3fs BC857BL3 BC860BW BC856A BC856B BC856BW BC857A PDF

    MARKING 3FS

    Abstract: MARKING CODE 21E SOT23 marking 3ks
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN 1 2006-09-29


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW BC857A MARKING 3FS MARKING CODE 21E SOT23 marking 3ks PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number: E N 2 8 0 9 2SA1656/2SC4363 PNP/NPN Epitaxial Planar Silicon Transistors SA i YO Switching Applications with Bias Resistance J A p p licatio n s • Switching circuit, inverter circuit, interface circuit, driver circuit F e a tu re s - On-chip bias resistance (R1 = 4.7kfi, R2=4.7kQ)


    OCR Scan     		2SA1656/2SC4363 2SA1656 rO-92 3C-43 PDF

    BD722

    Abstract: BD720 B0719 BD440 BD719 BD724 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC
    Text: BD720 BD722 BD724 BD726 J SILICON EPITAXIAL-BASE POWER TRANSISTOR PNP transistor in a S O T3 2 plastic envelope intended fo r use in audio output and general purpose am plifier applications. BD 720 is equivalent to BD 440. NPN complements are B D 719; 721; 723 and


    OCR Scan     		BD720 BD722 BD724 BD726 BD440. BD719; BD724. bd722 B0719 BD440 BD719 BD726 transistor 3bs NPN, Si, POWER TRANSISTOR, PLASTIC PDF

    C2335

    Abstract: Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw
    Text: PNP Silicon AF Transistors BC 856W . BC 860W Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, BC 848W, BC 849W, BC 850W NPN


    Original     		Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 C2335 Q62702-C2335 bc 3as 856W C2298 bc 750 C2292 C2303 marking 2 AW marking code aw PDF

    3BS transistor

    Abstract: transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		BC856T BC856AT BC856BT VPS05996 EHP00381 EHP00380 Jan-08-2002 EHP00382 EHP00379 3BS transistor transistor 3bs 846T BC856AT BC856BT BC856T SC75 transistor BC 109 Data PDF

    transistor packing code 3f

    Abstract: marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A
    Text: BC856.-BC860. PNP Silicon AF Transistor • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30 hz and 15 kHz • Complementary types: BC846.-BC850. NPN • Pb-free (RoHS compliant) package 1)


    Original     		BC856. -BC860. BC846. -BC850. BC856A BC856B BC856BW OD323 transistor packing code 3f marking 3ks BC856B BC856BW BC857A BC857AW BC846 BC850 BC856 BC856A PDF

    3BS transistor

    Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
    Text: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,


    OCR Scan     		BD933F; BD935F BD937F; BD939F BD941F 711002b 0043G52 OT186 BD934F, BD936F, 3BS transistor BD937F b0933 935F BD935 d941 BD933F BD934F PDF

    transistor BD939F

    Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
    Text: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.


    OCR Scan     		BD933F; BD935F BD937F; BD939F BD941F Q0M3052 OT186 BD934F, BD936F, BD938F, transistor BD939F d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F PDF

    BC 511

    Abstract: Q62702-C2295 MARKING 3FS
    Text: SIEMENS PNP Silicon A F Transistors BC 856W . BC 860W Features • • • • • For A F input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 847W, B C 848W,


    OCR Scan     		Q62702-C2335 Q62702-C2292 Q62702-C2293 Q62702-C2294 Q62702-C2295 Q62702-C2296 Q62702-C2297 Q62702-C2298 Q62702-C2299 Q62702-C2300 BC 511 MARKING 3FS PDF

    3BS transistor

    Abstract: No abstract text available
    Text: BC856T PNP Silicon AF Transistor Preliminary data 3  For AF input stages and driver applications  High current gain  Low collector-emitter saturation voltage  Complementary types: BC 846T 2 1 Type Marking Pin Configuration BC856AT 3As 1=B 2=E 3=C SC75


    Original     		BC856T VPS05996 BC856AT BC856BT 3BS transistor PDF