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    Bridgelux Inc BXFN-65G-21L-3C4-00-0-3

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    DigiKey BXFN-65G-21L-3C4-00-0-3 Digi-Reel 214,135 1
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    Bridgelux Inc BXFN-57G-21L-3C4-00-0-3

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    Bridgelux Inc BXFN-50G-21L-3C4-00-0-3

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    DigiKey BXFN-50G-21L-3C4-00-0-3 Cut Tape 141,148 1
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    EBV Elektronik BXFN-50G-21L-3C4-00-0-3 8 Weeks 17,000
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    Bridgelux Inc BXFN-30G-21L-3C4-00-0-3

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    DigiKey BXFN-30G-21L-3C4-00-0-3 Digi-Reel 126,469 1
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    BXFN-30G-21L-3C4-00-0-3 Cut Tape 126,469 1
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    BXFN-30G-21L-3C4-00-0-3 Reel 119,000 17,000
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    Newark BXFN-30G-21L-3C4-00-0-3 Bulk 969,000
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    TME BXFN-30G-21L-3C4-00-0-3 10
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    EBV Elektronik BXFN-30G-21L-3C4-00-0-3 782,000 8 Weeks 17,000
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    New Advantage Corporation BXFN-30G-21L-3C4-00-0-3 629,000 1
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    Bridgelux Inc BXFN-27G-21L-3C4-00-0-3

    LED F90 WARM WHT 2700K 1411
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    DigiKey BXFN-27G-21L-3C4-00-0-3 Cut Tape 115,870 1
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    BXFN-27G-21L-3C4-00-0-3 Digi-Reel 115,870 1
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    BXFN-27G-21L-3C4-00-0-3 Reel 85,000 17,000
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    EBV Elektronik BXFN-27G-21L-3C4-00-0-3 8 Weeks 17,000
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    3C400 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    3C400 RPM Micro 3.0A Iout, 400V Vrrm General Purpose Silicon Rectifier Scan PDF

    3C400 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    A039h

    Abstract: 3A400
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.0E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball A039h 3A400 PDF

    JS28F512M29

    Abstract: js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 PC28F00AM29EWHA 11-Apr-2011 JS28F512M29 js28f256m29 js28f256 JS28F512 pc28f00am29ew JS28F00AM29EW pc28f00am29 js28f00 PC28F00AM29EWHA JS28F256M29EWL PDF

    db810

    Abstract: B908
    Text: N0,F4@74D70#@7GEFDK0 AAFBD<@F03 ,4 N0E9B89/04@709B8CF9B/0#@BGF N0B989B/0 A?<@4>0)GFBGF N0,GD94680&#39;AG@F N0&AI09E?0*DA9<>8 N0(A@0#EA>4F870)GFBGF ,?0(92,;0#,.4,5;:0207730*(;065: -8>86A?A4F6A? 4F46A? *DA68EE0A@FDA> 0<D8>8EE0(8FIAD= '84EGD8?8@F020-8EF


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    74D70# GD94680 4F870 4F46A? DA68EE0 84EGD8 F020-8EF F0A90 A4706A 84FGD8E04 db810 B908 PDF

    Spansion S29GL512N11

    Abstract: No abstract text available
    Text: S29GLxxxN MirrorBitTM Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit process technology ADVANCE INFORMATION Datasheet Distinctive Characteristics Architectural Advantages


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    S29GLxxxN S29GL512N, S29GL256N, S29GL128N 128-word/256-byte 8-word/16-byte S29GLxxxN 27631sb2 Spansion S29GL512N11 PDF

    SGA23

    Abstract: No abstract text available
    Text: FUJITSU SEMICONDUCTOR DATA SHEET AE1.3E PAGE MODE FLASH MEMORY CMOS 128M 8M x 16/4M × 32 BIT MBM29XL12DF -70/80 • GENERAL DESCRIPTION The MBM29XL12DF is 128M-bit, 3.0 V-only Page mode and dual operation Flash memory organized as 8M words by 16 bits or 4M words by 32 bits. The device is offered in 90-pin SSOP and 96-ball FBGA packages.


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    16/4M MBM29XL12DF 128M-bit, 90-pin 96-ball SGA23 PDF

    ST3215

    Abstract: No abstract text available
    Text: User’s Manual 16 RL78/G13 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    RL78/G13 16-Bit R01UH0146EJ0310 ST3215 PDF

    Untitled

    Abstract: No abstract text available
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet This product family has been retired and is not recommended for designs. For new and current designs,


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL128P, S29GL256P, S29GL512P S29GL128N, PDF

    BCM 4709

    Abstract: 78F1830 78F1834 78f1835 78f1845 78F1804 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841
    Text: User’s Manual 16 表紙 78K0R/Fx3 ユーザーズマニュアル ハードウェア編 16 ビット・シングルチップ・マイクロコントローラ 本資料に記載の全ての情報は本資料発行時点のものでありルネサス エレクトロニクスは、


    Original
    78K0R/Fx3 78K0R/FB3: PD78F1804 78F1805 78F1806 78F1807 78F1804 BCM 4709 78F1830 78F1834 78f1835 78f1845 78f1826 78F1830GAA2-GAM-G ADS TS20 PD78F1841 PDF

    a22t

    Abstract: S19G S29GL-N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


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    S29GL-N S29GL512N, S29GL256N, S29GL128N a22t S19G PDF

    S29GL-N

    Abstract: 1E300
    Text: S29GL512/256/128N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this


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    S29GL512/256/128N S29GL512N, S29GL256N, S29GL128N S29GL-N 1E300 PDF

    7be0

    Abstract: No abstract text available
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


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    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 48MB/s) Kbytes/64 7be0 PDF

    S70GL01GN00

    Abstract: S29GL01GP S29GL512N
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: The S70GL01GN has been retired and is not recommended for designs. For new and current designs, S29GL01GP


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    S70GL01GN00 S70GL01GN S29GL01GP S29GL01GP S29GL512N PDF

    pdl128g70

    Abstract: SA90 1D400
    Text: ADVANCE INFORMATION Am29PDL128G 128 Megabit 8 M x 16-Bit/4 M x 32-Bit CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory with VersatileIOTM Control DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES SOFTWARE FEATURES • 128Mbit Page Mode device ■ Software command-set compatible with JEDEC 42.4


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    Am29PDL128G 16-Bit/4 32-Bit) 128Mbit 16-bit) Am29F Am29LV LAB080 pdl128g70 SA90 1D400 PDF

    2B60000

    Abstract: S70GL01GN00 S29GL512N gl512 2200-0002
    Text: S70GL01GN00 MirrorBit Flash 1024 Megabit, 3.0 Volt-only Page Mode Flash Memory Featuring 110 nm MirrorBit™ Process Technology ADVANCE INFORMATION Data Sheet Notice to Readers: The Advance Information status indicates that this document contains information on one or more products under development


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    S70GL01GN00 2B60000 S29GL512N gl512 2200-0002 PDF

    M29EWL

    Abstract: M29EW JS28F00AM29EWH 28F256M29EW JS28F00AM29EW
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 144KB 256Mb M29EWL JS28F00AM29EWH 28F256M29EW JS28F00AM29EW PDF

    JS28F00am29

    Abstract: JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256
    Text: Numonyx Axcell™ M29EW Datasheet 256-Mbit, 512-Mbit, 1-Gbit, 2-Gbit x8/x16, uniform block 3 V supply flash memory Features „ „ „ „ „ „ „ Supply voltage — VCC = 2.7 to 3.6 V for Program, Erase and Read — VCCQ = 1.65 to 3.6 V for I/O buffers


    Original
    M29EW 256-Mbit, 512-Mbit, x8/x16, 100ns 512-word 14MB/s) Kbytes/64 JS28F00am29 JS28F00AM29EW JS28F512M29 js28f256m29 pc28f00am29ew pc28f00am29 JS28F512 PC28F00B PC28F512M JS28f256 PDF

    MBM29XL12DF

    Abstract: No abstract text available
    Text: MBM29XL12DF-70/80 Data Sheet Retired Product MBM29XL12DF -70/80 Cover Sheet This product has been retired and is not recommended for new designs. Availability of this document is retained for reference and historical purposes only. Continuity of Specifications


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    MBM29XL12DF-70/80 MBM29XL12DF DS05-20901-2E F0307 ProductDS05-20901-2E MBM29XL12DF PDF

    S29GL512N datasheet

    Abstract: GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL128P S29GL256N S29GL512N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit Process Technology S29GL-N Cover Sheet Data Sheet For new designs, S29GL512P, S29GL256P, and S29GL128P supersedes S29GL512N, S29GL256N, and


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    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N S29GL512P, S29GL256P, S29GL128P S29GL512N datasheet GL128n s29gl256p S29GL256p spansion S29GL512P Spansion obsolescence S29GL S29GL128N S29GL256N S29GL512N PDF

    1A4000

    Abstract: No abstract text available
    Text: Am29PDL128G Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and


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    Am29PDL128G Am29PDL127H 1A4000 PDF

    R5f104

    Abstract: No abstract text available
    Text: User’s Manual 16 RL78/G14 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


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    RL78/G14 16-Bit R01UH0186EJ0100 R5f104 PDF

    gl256N

    Abstract: S29GL512N datasheet S29GL-N S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N
    Text: S29GL-N MirrorBit Flash Family S29GL512N, S29GL256N, S29GL128N 512 Megabit, 256 Megabit, and 128 Megabit, 3.0 Volt-only Page Mode Flash Memory featuring 110 nm MirrorBit™ Process Technology Data Sheet Notice to Readers: This document states the current technical specifications


    Original
    S29GL-N S29GL512N, S29GL256N, S29GL128N S29GL-N gl256N S29GL512N datasheet S19GL128N 31df* 33H s29gl512 FBGA 8 x 14 package tray S29GL date code marking S29GL128N S29GL256N PDF

    N32-95-978

    Abstract: N32-W1-DPi MFE 521 N32-95-020 3C-700-M16-F 3C-060 700SCFM N32-15-160 3C-020-M02-F N34-95-200
    Text: 20 SCFM Coalescer Type of contamination: oil Coalescer Model # Front View Side View Specifications Description A B C D 3C-020-M02-P Metal Bowl, Manual Drain 3.0 6.8 3.0 1.5 3C-020-M02-F Metal Bowl, Float Drain 3.0 6.8 3.0 1.5 3C-020-M02-Fi Metal Bowl, Float Drain w/Indicator


    Original
    3C-020-P02-Fi 3C-020-M02-P 3C-020-M02-Pi 3C-020-P02-P 3C-020-P02-Pi 3C-020-M02-F 3C-020-M02-Fi 3C-1900-MFD-X 3C-1900-MFE-X 3C-3000-MFF-P N32-95-978 N32-W1-DPi MFE 521 N32-95-020 3C-700-M16-F 3C-060 700SCFM N32-15-160 3C-020-M02-F N34-95-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: User’s Manual 16 RL78/G14 User’s Manual: Hardware 16-Bit Single-Chip Microcontrollers All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by


    Original
    RL78/G14 16-Bit R01UH0186EJ0310 PDF

    3c400

    Abstract: No abstract text available
    Text: AjÙkÇGm Broadband Four-Way Power Divider 2-2000 MHz DS-4-4 C-17 • 3 Decade Frequency Range ■ Low Loss — 1 dB Maximum to 1000 MHz ■ High Isolation — 25 dB Midband Minimum B C E F 2 250 0.656 1 062 2 12S 3 166 4 S0C 5T2 (16 7| (27.01 (S<0) I« 101 (114.31


    OCR Scan
    3C-400 1C00-2000 3c400 PDF