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Catalog Datasheet	MFG & Type	Document Tags	PDF
3DD303 Abstract: 3DD30 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303B DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 60V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 0.6V(Max) @IC= 0.5A APPLICATIONS ·Designed for B/W TV vertical output applications.	Original	3DD303B 3DD303 3DD30	PDF
NPN transistor collector base and emitter Abstract: TV power transistor datasheet 3DD303 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303C DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 100V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.	Original	3DD303C NPN transistor collector base and emitter TV power transistor datasheet 3DD303	PDF
3DD303A Abstract: CBO 40V CEO 25V EBO 5V 3DD303 Text: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 3DD303A DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 40V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A APPLICATIONS ·Designed for B/W TV vertical output applications.	Original	3DD303A 3DD303A CBO 40V CEO 25V EBO 5V 3DD303	PDF
THINKI transistor catalog Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747 Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003	Original	2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747	PDF