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    W39L020

    Abstract: No abstract text available
    Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.


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    W39L020 W39L020 12-volt PDF

    2Axxx

    Abstract: No abstract text available
    Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7−DQ0.


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    W39L020 W39L020 12-volt FEAT798 2Axxx PDF

    AT49BV004

    Abstract: AT49BV004T AT49BV4096A AT49BV4096AT ut000 4096A
    Text: Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks


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    AT49BV004 AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12TC 44-Lead, 48-Lead, /4096A AT49BV004T AT49BV4096AT ut000 4096A PDF

    AT49F4096A

    Abstract: AT49F4096AT AT49F004 AT49F004T 4096A
    Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks


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    AT49F004 AT49F4096A AT49F4096AT-90RI AT49F4096AT-90TI 44-Lead, 48-Lead, /4096A AT49F4096AT AT49F004T 4096A PDF

    AT49F004

    Abstract: AT49F004T AT49F4096A AT49F4096AT 4096A
    Text: Features • Single Voltage Operation • • • • • • • • • – 5V Read – 5V Programming Fast Read Access Time - 55 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks


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    AT49F004 AT49F4096A 09/98/xM AT49F004T AT49F4096AT 4096A PDF

    tpec

    Abstract: XX555 W49L401 W49L401T
    Text: W49L401 T 256K x 16 CMOS FLASH MEMORY GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP


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    W49L401 12-volt tpec XX555 W49L401T PDF

    18XXXh

    Abstract: No abstract text available
    Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.


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    W39L020 12-volt 18XXXh PDF

    W39L020

    Abstract: No abstract text available
    Text: W39L020 256K x 8 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W39L020 is a 2Mbit, 3.3-volt only CMOS flash memory organized as 256K × 8 bits. For flexible erase capability, the 2Mbits of data are divided into 4 uniform sectors of 64 Kbytes, which are composed of 16 smaller even pages with 4 Kbytes. The byte-wide × 8 data appears on DQ7 − DQ0.


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    W39L020 W39L020 12-volt FE798 PDF

    W49L401

    Abstract: W49L401T
    Text: W49L401 T 256K x 16 CMOS FLASH MEMORY 1. GENERAL DESCRIPTION The W49L401(T) is a 4-megabit, 3.3-volt only CMOS flash memory organized as 256K × 16 bits. The device can be programmed and erased in-system with a standard 3.3-volt power supply. A 12-volt VPP


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    W49L401 12-volt ope798 W49L401T PDF

    18xx

    Abstract: Ortec 20XXXh 39xx W39L020-90 3axxx
    Text: W39L020 Data Sheet 256K x 8 CMOS FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 3 2. FEATURES . 3


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    W39L020 18xx Ortec 20XXXh 39xx W39L020-90 3axxx PDF

    1139A-09

    Abstract: 512k x 8 chip block diagram BLOCK DIAGRAM FOR DETECTION of plastics for recycling block diagram of dual 12v power supply 07xxx AT49BV004 AT49BV004T AT49BV4096A AT49BV4096AT 4096A
    Text: 2Features • • • • • • • • • • 2.7V to 3.6V Read/Write Operation Fast Read Access Time - 120 ns Internal Erase/Program Control Sector Architecture – One 8K Words 16K bytes Boot Block with Programming Lockout – Two 4K Words (8K bytes) Parameter Blocks


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    AT49BV004 AT49BV4096A 09/98/xM 1139A-09 512k x 8 chip block diagram BLOCK DIAGRAM FOR DETECTION of plastics for recycling block diagram of dual 12v power supply 07xxx AT49BV004T AT49BV4096AT 4096A PDF

    1690H

    Abstract: 79XXX 4096A 3DXXX
    Text: Features * * * * * * * * * * 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks - One 240K Words (480K bytes) Main Memory Array Block


    OCR Scan
    AT49BV004 T49BV4096A 48-Lead, MO-142 1690H 79XXX 4096A 3DXXX PDF

    49F004

    Abstract: 49f004t 4096A
    Text: Features * Single Voltage Operation - 5V Read - 5V Programming * Fast Read Access Time - 55 ns * Internal Erase/Program Control * Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks


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    AT49F004 AT49F4096A 48-Lead, MO-142 49F004 49f004t 4096A PDF

    Untitled

    Abstract: No abstract text available
    Text: Features • • • • • • • • • • ¿lmËL 2.7V to 3.6V Read/Write Operation Fast Read Access Time -120 ns Internal Erase/Program Control Sector Architecture - One 8K Words 16K bytes Boot Block with Programming Lockout - Two 4K Words (8K bytes) Parameter Blocks


    OCR Scan
    AT49B 48-Lead, PDF