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Untitled Abstract: No abstract text available Text: 3VD045060JL 3VD045060JL N-channel MOSFET CHIPS DESCRIPTION Ø 3VD045060JL is a N-Channel enhancement mode 2 MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø High density cell design for low RDS ON Ø Rugged and reliable. Ø Fast switching performance.	Original	PDF	3VD045060JL 3VD045060JL OT-23 2N7002. 500mA 200mA 115mA,
2N7002 Abstract: N-MOSFET SOT-23 Text: 3VD045060JL 3VD045060JL N沟道MOSFET芯片描述 Ø 3VD045060JL为采用硅外延工艺制造的N沟道增 2 强型MOS场效应晶体管； Ø 采用高密度元胞设计，低导通电阻； Ø 高稳定度和高可靠性； Ø 高速的开关特性；	Original	PDF	3VD045060JL 3VD045060JL 3VD045060JLN OT-23-3L 2N7002 1000A OT-23) 60VVGS 2N7002 N-MOSFET SOT-23
mosfet vgs 5v Abstract: M6G DATASHEET 2N7002 Text: 3VD045060JL 3VD045060JL N Ø MOSFET 3VD045060JL N MOS Ø Ø Ø Ø Ø SOT-23-3L 2N7002 Ø MOS Ø 0.53mm*0.53mm Ø 230±20 m Ø Al Au Tamb=25°C (SOT-23 ) VDS 60 V VGS ±20 V ID 115 mA PD 200 mW TJ 150 °C Tstg -55-150 °C (Tamb=25°C) VGS=0V ID=10µA 60 VGS=0V ID=3mA	Original	PDF	3VD045060JL 3VD045060JL OT-23-3L 2N7002 OT-23 500mA mosfet vgs 5v M6G DATASHEET 2N7002
Power MOSFET Wafer Abstract: 2N7002 Text: 3VD045060JL 3VD045060JL N-channel MOSFET CHIPS DESCRIPTION Ø 3VD045060JL is a N-Channel enhancement mode 2 MOS-FET chip fabricated in advanced silicon epitaxial planar technology. Ø High density cell design for low RDS ON Ø Rugged and reliable. Ø Fast switching performance.	Original	PDF	3VD045060JL 3VD045060JL OT-23 2N7002. Power MOSFET Wafer 2N7002