InSb spectral response
Abstract: HgCdTe Raytheon HgCdTe THE-SIRTF-ARRAY aladdin one astro Correlated
Text: IR CoE ASTRONOMY TEAM Astronomical Infrared Sensor Chip Assemblies Standard Products High performance InSb and Impurity Band Conduction IBC focal plane arrays are available with spectral responses from 0.4µm to 28µm for ground based astronomy and space based instruments. Raytheon IR CoE is one of the worlds leading suppliers of focal plane arrays for astronomical applications for the past 10 years. IR CoE utilizes state-ofthe-art facilities and processes to produce these arrays. Listed below are some of the InSb and IBC arrays available from the IR CoE as standard products
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DTS99-0089
InSb spectral response
HgCdTe
Raytheon HgCdTe
THE-SIRTF-ARRAY
aladdin one
astro
Correlated
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Untitled
Abstract: No abstract text available
Text: R R series Thermal Emission Microscope IAHEAI New High-sensitivity detector thermal detector InSb Motorized turret with objective lenses • Two objective lenses for analyzing thermal emissions • Three objective lenses for probing and laser scanning Thermal Emission Microscope
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B1201
SSMS0012E15
JUN/2015
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siemens gmr
Abstract: siemens magnetic sensors siemens wheel speed sensor siemens soft starter SIEMENS WASHING machine Magnetic ink detection hand drier sensor design circuits PLC eberle 511 GMR C6 hand drier sensor design components
Text: s Magnetic Sensors ht Application Notes 10.98 tp :/ se /ww m w ico .s nd iem uc en to s. r/ de / Giant Magneto Resistors Edition 10.1998 Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation, Balanstraße 73, 81541 München Siemens AG 1998.
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B143-H7276-X-X-7600
siemens gmr
siemens magnetic sensors
siemens wheel speed sensor
siemens soft starter
SIEMENS WASHING machine
Magnetic ink detection
hand drier sensor design circuits
PLC eberle 511
GMR C6
hand drier sensor design components
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GMR sensor
Abstract: eberle GMR B6 datenbuch GMR B6 application hallsensor Magnetische weich sensor datasheet Q62705-K5003 magneto resistor
Text: Giant Magneto Resistors Applikationsschrift Giant Magneto Resistors INHALT 1 EINFÜHRUNG . 3 2 GRUNDLAGEN . 4
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B143-H6802-G2-X-7600)
B143-H7098-G1-X-7600)
B143-H7261-X-X-7600)
D-90713
GMR sensor
eberle
GMR B6
datenbuch
GMR B6 application
hallsensor
Magnetische
weich sensor datasheet
Q62705-K5003
magneto resistor
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DIODE S4 74
Abstract: transistor b143 e.s MAGNETIC HEAD gmr Hall sensors Siemens MAGNETIC HEAD impedance siemens automotive sensors Magnetic ink detection SIEMENS WASHING machine GMR sensor siemens magnetic sensors
Text: Application Note July 2001 I N F I N EO N TEC H N O LO G I ES A G ’ S SA L ES O F F I CES WO R L DW I D E – P A R T LY R E P R E S E N T E D B Y S I E M E N S A G A Infineon Technologies Villach AG Vertrieb Operngasse 20B/3/31 1040 Wien T +43 1-5 87-70 70 0
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20B/3/31
B143-H7276-G1-X-7600
DIODE S4 74
transistor b143 e.s
MAGNETIC HEAD gmr
Hall sensors Siemens
MAGNETIC HEAD impedance
siemens automotive sensors
Magnetic ink detection
SIEMENS WASHING machine
GMR sensor
siemens magnetic sensors
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a9851
Abstract: 004-01-1420-0 AGK-1783 D-78056 Utech Electronics
Text: 90° MCX cable connector in MIM technology 90° MCX Kabelsteckverbinder in MIM Technologie +High retention forces + Vibration resistant + High retention f Outstanding mechanical characteristics t h r o u g h M I M technology Her vorragende mechanische
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D-30659
D-86690
D-78056
IL-75706
a9851
004-01-1420-0
AGK-1783
Utech Electronics
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Untitled
Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693A – AUGUST 2013 – REVISED AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693A
DRV411
250-mA
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Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693 – AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693
DRV411
250-mA
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Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693A – AUGUST 2013 – REVISED AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693A
DRV411
250-mA
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Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693A – AUGUST 2013 – REVISED AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693A
DRV411
250-mA
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Untitled
Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693A – AUGUST 2013 – REVISED AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693A
HW-322,
HW-302,
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Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693A – AUGUST 2013 – REVISED AUGUST 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693A
DRV411
250-mA
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Abstract: No abstract text available
Text: DRV411 www.ti.com SBOS693B – AUGUST 2013 – REVISED DECEMBER 2013 Sensor Signal Conditioning IC for Closed-Loop Magnetic Current Sensors Check for Samples: DRV411 FEATURES DESCRIPTION • The DRV411 is designed to condition InSb Hall elements for use in closed-loop current-sensor
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DRV411
SBOS693B
DRV411
250-mA
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SKHI 65
Abstract: semikron IGBT semikron SKHI 64 SEMIKRON SKHI 65 SKHI 64 Semikron Skai 2 skm200gb123d igbt driver SKHI 23/12 semikron SKHI 21 semikron ASIC SKIC
Text: ✓ plug + play ✓ vollständiger Schutz ✓ 4kV Isolationsspannung ✓ einfache Anwenderschnittstelle ✓ DC-DC-Wandler integriert IGBT und MOSFET SKHI - Treiber Integrierte Komponenten und Integrierte Lösungen SEMIKRON - IGBT/MOSFET Ansteuerungen SKHI
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D-90253
SKHI 65
semikron IGBT
semikron SKHI 64
SEMIKRON SKHI 65
SKHI 64
Semikron Skai 2
skm200gb123d
igbt driver SKHI 23/12
semikron SKHI 21
semikron ASIC SKIC
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Selection guide
Abstract: United Detector Technology PSD
Text: Selection guide - September 2013 Opto-semiconductor Modules Related products and circuits that enable semiconductor elements to operate at peak performance. A broad range of customization is available. HAMAMATSU PHOTONICS K.K. Opto-semiconductor Modules Related products and circuits that enable
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KACC0001E02
Selection guide
United Detector Technology PSD
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43a Hall Effect Magnetic Sensors
Abstract: X98824-ss IR sensor for line follower robot crankshaft position sensor Piezoelectric vortex flow meter X98834-SS SS19 hall "Proximity Sensor" suitable for line follower block diagram of dialysis machine micro switch keyboard
Text: HALL EFFECT SENSING AND APPLICATION MICRO SWITCH Sensing and Control 7DEOH RI &RQWHQWV Chapter 1 • Hall Effect Sensing Introduction . 1
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005715-2-EN
43a Hall Effect Magnetic Sensors
X98824-ss
IR sensor for line follower robot
crankshaft position sensor
Piezoelectric vortex flow meter
X98834-SS
SS19 hall
"Proximity Sensor" suitable for line follower
block diagram of dialysis machine
micro switch keyboard
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Developer
Abstract: 122 dze wire Alpha 21064-150 IRf 724 N Alpha 21064-BB Alpha 21064-P1 21064 21064A-200 21064-BB pfn 109 06f
Text: Digital Semiconductor Alpha 21064 and Alpha 21064A Microprocessors Hardware Reference Manual Order Number: EC–Q9ZUC–TE Abstract: This document contains information about the following Alpha microprocessors: 21064-150, 21064-166, 21064-200, 21064A-200,
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1064A
1064A-200,
1064A-233,
1064A-275,
1064A-275-PC,
1064A-300.
1064A
Developer
122 dze wire
Alpha 21064-150
IRf 724 N
Alpha 21064-BB
Alpha 21064-P1
21064
21064A-200
21064-BB
pfn 109 06f
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Untitled
Abstract: No abstract text available
Text: TPS2392 TPS2393 www.ti.com SLUS536C − AUGUST 2002 − REVISED AUGUST 2004 FULLĆFEATURED -48ĆV HOT SWAP POWER MANAGER FEATURES D D D D D D D D D D D D DESCRIPTION Wide Input Supply Range: −20 V to −80 V The TPS2392 and TPS2393 integrated circuits are hot
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TPS2392
TPS2393
SLUS536C
TPS2392
TPS2393
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UDG-02098
Abstract: No abstract text available
Text: TPS2392 TPS2393 www.ti.com SLUS536C − AUGUST 2002 − REVISED AUGUST 2004 FULLĆFEATURED -48ĆV HOT SWAP POWER MANAGER FEATURES D D D D D D D D D D D D DESCRIPTION Wide Input Supply Range: −20 V to −80 V The TPS2392 and TPS2393 integrated circuits are hot
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TPS2392
TPS2393
SLUS536C
14-Pin
44-Pin
TPS2393
-48-V
-20-V
-80-V,
UDG-02098
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quadrant detector hgcdte
Abstract: J15QUAD quadrant photodiode j10quad j16quad quadrant photodiode preamplifier
Text: J ^ E G zG JUDSON q Figure 29-1 Position S ensor D etector C onfiguration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single element photodiode with a quadrupole electrode geometry. These devices can provide linear X-Y
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J16PS,
J12PS,
J10PS
J16QUAD,
J10QUAD,
J15QUAD
UAD-8D6-R02M
J16QU
AD-8D6-R05M
J10QUA
quadrant detector hgcdte
J15QUAD
quadrant photodiode
j10quad
j16quad
quadrant photodiode preamplifier
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photodiode ge
Abstract: INSB PHOTODIODE HgCdTe J16QUAD-8D6-R02M J16PS 4 quadrant InSb quadrant detector InSb metal detector sensor j10quad
Text: E G zG J U D S O N * * — — «ï fflb . *V ÌV '#3é ¿.fi, ir Figure 29-2 Example of Position Linearity Figure 29-1 Position Sensor Detector Configuration - J16PS, J12PS, J10PS — '3 Î fc* i l '»ti'*.«'* Po sitio n S en sors A Ge, InAs, or InSb position sensor
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J16PS,
J12PS,
J10PS
J16QUAD,
J10QUAD,
J15QUAD
J16Quad
10x10
J12PS-8B12-S05M
J10PS-M204-S05M
photodiode ge
INSB PHOTODIODE
HgCdTe
J16QUAD-8D6-R02M
J16PS
4 quadrant InSb
quadrant detector
InSb
metal detector sensor
j10quad
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metal detectors IC
Abstract: HgCdTe metal detector sensor INSB PHOTODIODE J16PS-P6-S10M quadrant detector photodiode ge j10quad J16PS metal detector
Text: JK EC k G JUDSOñl q Figure 29-1 Position Sensor D etector Configuration J16PS, J12PS, J10PS Position Sensors A Ge, InAs, or InSb position sensor consists of a single elem en t photodiode w ith a quadrupole electrode geom etry. T hese devices can provide lin e a r X-Y
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J16PS,
J12PS,
J10PS
J16QUAD,
J10QUAD,
J15QUAD
J16Quad
J10PS-M204-S05M
J16QUAD-8D6-R02M
J16QUAD-8D6-R05M
metal detectors IC
HgCdTe
metal detector sensor
INSB PHOTODIODE
J16PS-P6-S10M
quadrant detector
photodiode ge
j10quad
J16PS
metal detector
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Halbleiterbauelemente DDR
Abstract: information applikation mikroelektronik Heft 12 information applikation mikroelektronik applikation heft VEB mikroelektronik mikroelektronik DDR Mikroelektronik Information Applikation mikroelektronik Heft "Mikroelektronik" Heft
Text: r ï n i k a r ^ e l e l - c Information Applikation t e n a n î l - c m [ n r L ü ^ i s i î s t e k t e n a r i i k Information Applikation HEFT 3 4 : H A LBLEITER V EN TILE und LEISTU N GSELEKTRO N IK v»bmikrooloVtronîk.kartItebknefchtiBtfthnnddtf imvobNombinfttmitiroeloktronik
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P873-G35-552
Abstract: p1760-04 P873-13
Text: Opto-semiconductors CONDENSED CATALOG 1987 Hamamatsu Photonics Solid State Division has devel oped a variety of opto-electronic semiconductor de vices. These competitively priced high quality products are designed to meet the requirements of general and
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S-114
DK-2000
JAN/87
P873-G35-552
p1760-04
P873-13
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