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    4000W AMPLIFIER Search Results

    4000W AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    HA7-5137A-5 Rochester Electronics LLC HA7-5137 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA7-5221-5 Rochester Electronics LLC HA7-5221 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA2-5102-5 Rochester Electronics LLC HA2-5102 - Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-2542-2 Rochester Electronics LLC HA1-2542 - Operational Amplifier Visit Rochester Electronics LLC Buy

    4000W AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    1200w power amplifier circuit diagram

    Abstract: 2000w power amplifier circuit diagram 2000w power amplifier diagram 1200w amplifier 4000w power amplifier dps1200 project power amplifier 1000W with two channel 48v 30a 1600w 1200w power amplifier 12v 30a 4000w
    Text: End-to-End Embedded Power Solutions 2010 Product Selection Guide End-to-End Power Solutions Front Ends & Rectifiers Hybrid Architecture: ≈81% overall efficiency STRENGTHS: WEAKNESSES: 48 OR 24V RECTIFICATION • Large installed base • di/dt of isolated bricks less than POLs


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    4000w power amplifier

    Abstract: antenna mtbf IEC-801-5 Surge protect surge protection mtbf 300w power amplifier circuit diagram mtbf antenna FILTRONIC COMTEK 4000w Filtronic BTS and antenna installation
    Text: CY156 DC Inserter / Bias Tee FEATURES • Extremely low loss BLOCK DIAGRAM MOLEX - 5566 • Extremely high return loss +12V DC GND • High DC current handling • Integrated surge protection To BTS DIN 7-16 M To Antenna DIN 7-16 (F) RF RF + DC • High MTBF


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    CY156 CY156 CA484 4000w power amplifier antenna mtbf IEC-801-5 Surge protect surge protection mtbf 300w power amplifier circuit diagram mtbf antenna FILTRONIC COMTEK 4000w Filtronic BTS and antenna installation PDF

    FHX04

    Abstract: FHX04X FHX05X FHX06X hemt low noise die
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


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    FHX04X, FHX05X, FHX06X 12GHz FHX04) FHX06X 2-18GHz FHX04 FHX04X FHX05X hemt low noise die PDF

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    Abstract: No abstract text available
    Text: X-Band Rack-mount SSPA 500W to 600W ARMA-4000X series                               


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    ARMA-4000Xï PB-ARMA-X-500-600-12106 PDF

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    Abstract: No abstract text available
    Text: Ku-Band Hub-mount SSPA 300W to 500W AWMA-5000KTM series Features •          Remote Monitor & Control High gain and linearity Output power of 500W see table A Gain adjustment Output sample monitor port Temperature gain compensation


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    AWMA-5000KTM AWMA-5000K S3102E20-19P PB-AWMA-Ku-300-500-13150 PDF

    4000w power amplifier

    Abstract: filtronic band-pass GSM BTS antenna BTS antenna installation FILTRONIC gsm tma tma umts TMA dual band bts gsm rx unit mtbf dual transceiver CA968F1V3
    Text: CA968F1V3 PCS1900/TDMA/CDMA Dual Duplexed, Full Band, Single TMA FEATURES • Small, low weight • Dual duplexed • High linearity • Lightning protected • High reliability • Available as RoHS compliant Inspired Wireless Solutions BENEFITS • Reduction in roll out costs


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    CA968F1V3 PCS1900/TDMA/CDMA CA968 1900MHz 4000w power amplifier filtronic band-pass GSM BTS antenna BTS antenna installation FILTRONIC gsm tma tma umts TMA dual band bts gsm rx unit mtbf dual transceiver CA968F1V3 PDF

    transistor 1345

    Abstract: FHR02X FHX02X GaAs FET HEMT Chips
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


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    FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 transistor 1345 FHR02X GaAs FET HEMT Chips PDF

    1000w power amplifier

    Abstract: No abstract text available
    Text: C-Band Hub-mount SSPA 500W to 1000W AWMA-6000CTM series Features •          Remote Monitor & Control High gain and linearity Output power up to 1000W see table A Gain adjustment Output sample monitor port Temperature gain compensation


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    AWMA-6000CTM AWMA-6000Cï PB-AWMA-C-500-1000-13150 1000w power amplifier PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier piezo charge amplifier MO-127 SA14 flyback 150w
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


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    546-APEX RANGE--16-200V TE9493 SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier piezo charge amplifier MO-127 SA14 flyback 150w PDF

    GaAs FET HEMT Chips

    Abstract: No abstract text available
    Text: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)


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    FHR02X 18GHz FHX02X 4-22GHz FCSI0598M200 GaAs FET HEMT Chips PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


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    546-APEX RANGE--16-200V TE9493 12-pin 45kHz SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA14 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS


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    546-APEX RANGE--16-200V TE9493 45kHz SA14U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W PDF

    hemt low noise die

    Abstract: No abstract text available
    Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility


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    FHX04X, FHX05X, FHX06X 12GHz FHX04) 12GHz FHX06X 2-18GHz hemt low noise die PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: SA041
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    546-APEX RANGE--16-200V TE9493 45kHz SA04U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W SA041 PDF

    FHR02FH

    Abstract: transistor hemt Low Noise HEMT
    Text: FHR02FH Super Low Noise HEMT FEATURES • • • • • Low Noise Figure: 1.2B Typ. @f=18GHz High Associated Gain: 8.5dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability Hermetically Sealed Package DESCRIPTION The FHR02FH is a High Electron Mobility Transistor(HEMT) intended for


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    FHR02FH 18GHz FHR02FH 4-22GHz FCSI0598M200 transistor hemt Low Noise HEMT PDF

    high frequency transistor ga as fet

    Abstract: GaAs FET HEMT Chips fujitsu hemt
    Text: FHX35X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.2dB Typ. @f=12GHz High Associated Gain: 10.0dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain Gate Gate DESCRIPTION The FHX35X is a High Electron Mobility Transistor(HEMT) intended


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    FHX35X 12GHz FHX35X 2-18GHz FCSI0598M200 high frequency transistor ga as fet GaAs FET HEMT Chips fujitsu hemt PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: 4000w power amplifier circuit diagram
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    546-APEX RANGE--16-200V TE9493 45kHz SA04U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w power amplifier circuit diagram PDF

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    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    546-APEX 6-200V TE9493 12-pin 45kHz SA04U PDF

    Untitled

    Abstract: No abstract text available
    Text: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor


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    FHX45X 12GHz FHX45X 2-18GHz FCSI0598M200 PDF

    Low Noise HEMT

    Abstract: Super low noise figure and high associated gain
    Text: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHC40LG FH40LG 2-12GHz FCSI0598M200 Low Noise HEMT Super low noise figure and high associated gain PDF

    fujitsu hemt

    Abstract: No abstract text available
    Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package


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    FHX04LG/LP, 05LG/LP, 06LG/LP 12GHz FHX04) FHX05LG/LP, FHX06LG/LP 2-18GHz fujitsu hemt PDF

    300w power amplifier circuit diagram

    Abstract: POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w amplifier
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 HTTP://WWW.APEXMICROTECH.COM M I C R O T E C H N O L O G Y 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    546-APEX RANGE--16-200V TE9493 45kHz SA04U 300w power amplifier circuit diagram POWER AMPLIFIER CIRCUIT DIAGRAM 4000W 4000w amplifier PDF

    POWER AMPLIFIER CIRCUIT DIAGRAM 4000W

    Abstract: No abstract text available
    Text: PULSE WIDTH MODULATION AMPLIFIER SA04 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • WIDE SUPPLY RANGE—16-200V 20A CONTINUOUS TO 85° C CASE 3 PROTECTION CIRCUITS ANALOG OR DIGITAL INPUTS


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    546-APEX RANGE--16-200V TE9493 45kHz SA04U POWER AMPLIFIER CIRCUIT DIAGRAM 4000W PDF

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    Abstract: No abstract text available
    Text: PU LSE WIDTH MODULATION AMPLIFIER APÉ* M l C R O Î E C M N O L O f i Y SA14 H T T P ^ / WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE— 16-200V 20A CONTINUOUS TO 85° C CASE


    OCR Scan
    546-APEX 6-200V 45kHz SA14U PDF