4096 BIT STATIC RAM Search Results

4096 BIT STATIC RAM Result Highlights (5)

Part	Manufacturer	Description
DF2B5M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-962 (SL2)
DF2B6M4CT	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-882 (CST2)
DF2B6M4ASL	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-962 (SL2)
DF2B5PCT	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-3.6 V, SOD-882 (CST2)
DF2B7AFS	Toshiba Electronic Devices & Storage Corporation	TVS Diode (ESD Protection Diode), Bidirectional, +/-5.5 V, SOD-923, AEC-Q101

4096 BIT STATIC RAM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ac 1501-50 Abstract: DA10 IM7141 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10 Text: IM 7141M 4 0 9 6 Bit 4 0 9 6 x 1 NMOS Static RAM DßffifPIDIL DESCRIPTION FEATURES The IM7141 is a 4096-bit static Random Access Memory organized 4096 words x 1 bit. The storage cells and decode and control circuitry are com pletely static; no clocks or refresh	OCR Scan	7141M 4096x1) -200ns -300ns 495mW IM7141 4096-bit IM7141-2M IM7141-3M IM7141M ac 1501-50 DA10 IM7141-2MJN IM7141-3MJN IM7141M IM7141MJN 8225 RAM S3A10	PDF
2147 RAM Abstract: D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147 Text: DßfFÜ^lOIL 2147 4096 Bit 4096x1 HMOS Static RAM FEATURES GENERAL DESCRIPTION • • • • • • • • The Intersil 2147 is a low power, high-speed 4096-bit static RAM organized 4096 words by 1 bit. It is an advanced version o f the industry standard 2147, fabricated using In	OCR Scan	4096x1) 2147L) 4096-bit 2147 RAM D2147 2147 4096 bit static RAM 2147L D2147L 613H D2147-3 A2TE CD2147	PDF
J18A Abstract: NMC2147H NMC2147HJ-1 NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L NMC214 Text: NMC2147H yg\ National éüàSemiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac cess memory fabricated using N-channel silicon-gate tech nology. All internal circuits are fully static and therefore re	OCR Scan	NMC2147H 4096-word TL/D/5257-7 TL/D/5257-8 J18A NMC2147HJ-1 NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L NMC214	PDF
NMC2147 Abstract: NMC2147H-2 Text: NMC2147H O T National ÆÂ Semiconductor NMC2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac cess memory fabricated using N-channel silicon-gate tech nology. All internal circuits are fully static and therefore re	OCR Scan	NMC2147H NMC2147H 4096-word NMC2147 NMC2147H-2	PDF
NMC2147HJ-1 Abstract: J18A NMC2147H NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L Text: NMC2147H W A National dOA Semiconductor NM C2147H 4096 x 1-Bit Static RAM General Description Features The NMC2147H is a 4096-word by 1-bit static random ac cess memory fabricated using N-channel silicon-gate tech nology. AN internal circuits are fully static and therefore re	OCR Scan	NMC2147H 4096-word NMC2147HJ-1 J18A NMC2147HJ-2 NMC2147HJ-3 NMC2147HJ-3L	PDF
Untitled Abstract: No abstract text available Text: NMC2147H National SSA Semiconductor NMC2147H 4096 x 1-Bit Static RAM G eneral D e scription Features The NMC2147H is a 4096-word by 1-bit static random ac cess memory fabricated using N-channel silicon-gate tech nology. All internal circuits are fully static and therefore re	OCR Scan	NMC2147H NMC2147H 4096-word TL/D/5257-7	PDF
UPD2147 Abstract: 2147 memory ic Text: NEC \|xPD2147A 4 ,0 9 6 x 1 -BIT STATIC NMOS RAM NEC Electronics Inc. Revision 1 Description Pin Configuration The [J.PD2147A is a 4096-bit static Random Access Memory organized as 4096 words by 1 bit, using a scaled MOS tech nology. It uses a uniquely innovative design approach which	OCR Scan	uPD2147A 4096-bit PD2147A 200mV UPD2147 2147 memory ic	PDF
zilog 6104 Abstract: Z6104-3 Z6104-4 Z6104-1 8891 Z6104-5 Z6104-2 Z6104 Z6104CS A96C Text: Single Copy Z6104 Hand,e w¡t Product Specification 4096 x 1 Bit Static RAM JANUARY 1978 Preliminary Description Features ' • 4096 X 1 organization ■ Static data storage circuitry no refresh required ■ Single phase chip enable clock generator circuitry	OCR Scan	Z6104 Z6104-1 Z6104-2 Z6104-3 Z6104-4 Z6104-5 Z6104-6 100pF Z6104CS zilog 6104 Z6104-3 Z6104-4 Z6104-1 8891 Z6104-5 Z6104-2 Z6104CS A96C	PDF
ge c147 Abstract: CY7C147-35KMB Text: _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM F eatures F unctional D escription • Automatic power-down when dese lected The CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is	OCR Scan	CY7C147 CY7C147-45LMB CY7C147 38-00030-B ge c147 CY7C147-35KMB	PDF
Untitled Abstract: No abstract text available Text: ss~ ü £ f~ _ CY7C147 SEMICONDUCTOR 4096 x 1 Static RAM Features Functional Description • A utom atic power-down when dese lected T he CY7C147 is a high-performance CMOS static RAMs organized as 4096 words by 1 bit. Easy memory expansion is	OCR Scan	CY7C147 CY7C147-45PC CY7C147-45DC CY7C147-45LC CY7C147-45DMB CY7C147-45KMB 38-00030-B	PDF
lh5114l Abstract: SHARP EL Text: SHARP EL E K / MELEC O IV 1SE 0 \| 31507^0 O O O Q Ì'n s \| C M O S 4096-Bit Static Random Access Memory LH5114L T -4 6 -2 3 -ÌZ LH5114L CMOS 4096-Bit Static Random Access Memory Pin Connections Description The L H 5114L is a static RAM organized as 1 ,0 2 4 X 4 bit by using silicon-gata CMOS process	OCR Scan	LH5114L 4096-Bit 5114L flla07Tfl 24DIP 24TYP- 62TYP© 54TYP- lh5114l SHARP EL	PDF
NMC5257A Abstract: nmc2141 Text: NMC2141, NMC5257A NMOSRAMs National Semiconductor Pr e v ie w NMC2141, NMC5257A 4096-Bit 4096 x 1 Static RAMs General Description Features These 4096-word by 1-bit sta tic random access memories are fabricated using N-channel silicon-gate technology. AH internal c ircu its are fully sta tic and therefore require	OCR Scan	NMC2141, NMC5257A 4096-word NMC2141. NMC5257A 4096-Bit NMC2141	PDF
zilog 6104 Abstract: Z6104-1 Z6104-4 Text: Single Copy Z6104 Handle Wit Product Specification 4096 x 1 Bit Static RAM JANUARY 1978 Zilog Features Description • 4096 X 1 organization ■ Static data storage circuitry no refresh required ■ Single phase chip enable clock generator circuitry ■ Separate data in and data output pins	OCR Scan	Z6104 Z6104-1 Z6104-2 Z6104-3 Z6104-4 Z6104-5 Z6104-6 100pF Z6104CS zilog 6104	PDF
MA5104 Abstract: No abstract text available Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,	Original	MA5104 DS3580-3 MA5104	PDF

A10176 Abstract: MA5104 DS3580-3 Text: APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard, 3µm technology. The device has separate input and output terminals controlled by	Original	MA5104 DS3580-3 MA5104 A10176	PDF
Untitled Abstract: No abstract text available Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS APRIL 1995 MA5104 DS3580-3.2 MA5104 RADIATION HARD 4096 x 1 BIT STATIC RAM The MA5104 4k Static RAM is configured as 4096 x 1 bits and manufactured using CMOS-SOS high performance, radiation hard,	Original	MA5104 DS3580-3 MA5104	PDF
im6654 Abstract: 6654 Text: 4096-Bit CMOS UV EPROM GENERAL DESCRIPTION FEATURES The Intersil IM6653 and IM6654 are fully decoded 4096 bit CMOS electrically programmable ROMs EPROMs fabricated with Intersil's advanced CMOS processing tech nology. In all static states these devices exhibit the micro	OCR Scan	4096-Bit IM6653 IM6654 IM6653/IM6654 LD00310I 6654	PDF
Untitled Abstract: No abstract text available Text: •> GOULD AM I Semiconductors Preliminary Data Sheet S6514 4096 BIT 1024x4 STATIC CMOS RAM Sep te m be r 1984 Features General Description □ □ □ □ □ □ □ □ The S 6 5 1 4 is a 4096 bit static C M O S R A M organized a s 1024 w o rd s by 4 bits per word. The device offers low	OCR Scan	S6514 1024x4) 18-Pin	PDF
CY2147-45PC Abstract: CY2147 CY2147-55PC CY2147-35PC 202S CY7C147 CY2147-35DC Text: W 4096 x 1 Static R/W RAM SEMICONDUCTOR Features Functional Description • Automatic power-down when dese lected • CMOS for optimum speed/power • H ighspeed — 35 ns T he CY2147 is a high-perform ance CM O S static R A M organized as 4096 by 1 bit. Easy	OCR Scan	CY2147 CY2147â 45DMB CY2147-45PC CY2147-55PC CY2147-35PC 202S CY7C147 CY2147-35DC	PDF
ram 4044 Abstract: EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA Text: PRELIMINARY SPECIFICATION E m 4044 m S E M 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out I FEATURES • • • • • • • • • GENERAL DESCRIPTION SEMI’s 4044 RAMs are fu lly STATIC 4096 word X 1 bit N-MOS Random Access Memories— requiring no	OCR Scan	18-pin ram 4044 EMM Semi 4044 4044 RAM memory 4044 DC 4044 4044-UCA 4044-UCB L4044 L4044-UCA	PDF
Untitled Abstract: No abstract text available Text: PRELIMINARY SPECIFICATION E m 4044 m s e m i FEATURES • • • • • • • • • 4K STATIC N-MOS RAM 4096 x 1, 450 ns, TTL In/Out 4096 words X 1 bit RAM High speed 450 ns ACCESS and CYCLE time Fully STATIC memory—no clock or refresh required Single +5V power supply	OCR Scan	18-pin	PDF
ROJ-20 Abstract: No abstract text available Text: PRELIMINARY HY61C68 HYUNDAI SEMICONDUCTOR 4096x4-Bit CMOS Static RAM OCTOBER 1986 DESCRIPTION The HY61C68 is a high speed, low power, 4096-word by 4-bit static CMOS RAM fabricated using highperformance CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	4096x4-Bit HY61C68 HY61C68 4096-word HY61C68L ROJ-20	PDF
MCM62963A Abstract: No abstract text available Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62963A Product Preview 4K x 10 Bit Synchronous Static RAM with Output Registers The MCM62963A is a 40,960 bit synchronous static random access memory organized as 4096 words of 10 bits, fabricated using Motorola's second-generation high-performance	OCR Scan	MCM62963A MCM62963A 2963A MCM62963AFN30	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62975A Product Preview 4K x 12 Bit Synchronous Static RAM with Transparent Outputs and Output Enable The MCM62975A is a 49,162 bit synchronous static random access memory organized as 4096 words of 12 bits, fabricated using Motorola's second-generation high-performance	OCR Scan	MCM62975A MCM62975A -------------8297b 62975FN MCM62975FN30	PDF

4096 BIT STATIC RAM Search Results

4096 BIT STATIC RAM Result Highlights (5)

4096 BIT STATIC RAM Datasheets Context Search

ac 1501-50

2147 RAM

J18A

NMC2147

NMC2147HJ-1

Untitled

UPD2147

zilog 6104

ge c147

Untitled

lh5114l

NMC5257A

zilog 6104

MA5104

A10176

Untitled

im6654

Untitled

CY2147-45PC

ram 4044

Untitled

ROJ-20

MCM62963A

Untitled