C2665
Abstract: C2668 7c26 C2662 C266 27C64 CY7C266 R1250 C2666
Text: 1CY 7C26 6 CY7C266 8Kx8 Power-Switched and Reprogrammable PROM Features Functional Description • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military) • Low power — 660 mW (commercial)
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CY7C266
CY7C266
600-mil-wide
C2665
C2668
7c26
C2662
C266
27C64
R1250
C2666
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PDF
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CY7C128A
Abstract: transistor C128 C128A 7C128A-45 7C128A-25
Text: 1CY 7C12 8A CY7C128A 2K x 8 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 440 mW commercial — 550 mW (military) • Low standby power
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CY7C128A
CY7C128A
transistor C128
C128A
7C128A-45
7C128A-25
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PDF
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C167A-3
Abstract: C167A-2 CY7C167A CY7C167A-35DMB cy7c167a-35pc
Text: CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs
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CY7C167A
CY7C167A
20-Lead
C167A-3
C167A-2
CY7C167A-35DMB
cy7c167a-35pc
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PDF
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CY7C197
Abstract: No abstract text available
Text: CY7C197 256Kx1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C197 has an automatic power-down feature, reducing the power consumption by 75% when deselected. • High speed — 12 ns Writing to the device is accomplished when the chip enable
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CY7C197
256Kx1
CY7C197
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PDF
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P4C148
Abstract: P4C149
Text: P4C148, P4C149 ULTRA HIGH SPEED 1K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Two Options – P4C148 Low Power Standby Mode – P4C149 Fast Chip Select Control High Speed Equal Access and Cycle Times – 10/12/15/20/25/35/45/55 ns (Commercial) – 15/20/25/35/45/55 ns (P4C148 Military)
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P4C148,
P4C149
P4C148
P4C149
096-bit
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PDF
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P4C168
Abstract: P4C169 P4C170
Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options
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Original
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P4C168,
P4C169,
P4C170
12/15/20/25/35ns
20/25/35/45/55/70ns
P4C168
P4C169
P4C170
P4C168
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PDF
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C167A
Abstract: C167A-2 C167A-3 CY7C167A CY7C167A-35VC
Text: 1CY 7C16 7A CY7C167A 16K x 1 Static RAM Features Functional Description • Automatic power-down when deselected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs
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CY7C167A
CY7C167A
C167A
C167A-2
C167A-3
CY7C167A-35VC
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PDF
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CY7C185A-20LMB
Abstract: C185A CY7C185 CY7C185A 624a2
Text: 1CY 7C18 5A CY7C185A 8K x 8 Static RAM Features • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 743 mW • Low standby Power — 220 mW • TTL-compatible inputs and outputs • Easy memory expansion with CE1, CE2 and OE features
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CY7C185A
CY7C185A
300-mil-wide
CY7C185A-20LMB
C185A
CY7C185
624a2
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PDF
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24-Pin Plastic DIP
Abstract: 64 CERAMIC LEADLESS CHIP CARRIER LCC diode Lz 66 transistor smd code wz P4C188 P4C188L
Text: P4C188/188L P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved)
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P4C188/188L
P4C188/P4C188L
P4C188L
22-Pin
24-Pin
P4C188
15DMB
20DMB
24-Pin Plastic DIP
64 CERAMIC LEADLESS CHIP CARRIER LCC
diode Lz 66
transistor smd code wz
P4C188
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C188/P4C188L ULTRA HIGH SPEED 16K x 4 STATIC CMOS RAMS FEATURES Single 5V±10% Power Supply Data Retention with 2.0V Supply P4C188L Military Three-State Outputs TTL/CMOS Compatible Outputs Fully TTL Compatible Inputs Standard Pinout (JEDEC Approved) – 22-Pin 300 mil DIP
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P4C188/P4C188L
P4C188
P4C188L
22-Pin
24-Pin
P4C188
536-bit
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C168, P4C169, P4C170 ULTRA HIGH SPEED 4K x 4 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Fully TTL Compatible, Common I/O Ports High Speed Equal Access and Cycle Times – 12/15/20/25/35ns (Commercial) – 20/25/35/45/55/70ns (P4C168 Military) Three Options
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Original
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P4C168,
P4C169,
P4C170
12/15/20/25/35ns
20/25/35/45/55/70ns
P4C168
P4C168
P4C169
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C187/P4C187L ULTRA HIGH SPEED 64K x 1 STATIC CMOS RAMS FEATURES Full CMOS, 6T Cell Data Retention with 2.0V Supply P4C187L Military High Speed (Equal Access and Cycle Times) – 10/12/15/20/25 ns (Commercial) – 12/15/20/25/35 ns (Industrial) – 15/20/25/35/45 ns (Military)
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P4C187/P4C187L
P4C187
P4C187L
P4C187L
22-Pin
24-Pin
290x490
28-Pin
350x550
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C164 REVISIONS DOCUMENT NUMBER: DOCUMENT TITLE: SRAM115 P4C164 ULTRA HIGH SPEED 8K x 8 STATIC CMOS RAMS REV. ISSUE DATE ORIG. OF CHANGE OR 1997 DAB New Data Sheet A Oct-05 JDB Change logo to Pyramid B Jun-06 JDB Added 28-pin ceramic DIP C Aug-06 JDB Added Lead Free Designation
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Original
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P4C164
Oct-05
Jun-06
Aug-06
SRAM115
P4C164
28-pin
SRAM115
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PDF
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Untitled
Abstract: No abstract text available
Text: P4C1256 HIGH SPEED 32K x 8 STATIC CMOS RAM FEATURES Fully TTL Compatible Inputs and Outputs Advanced CMOS Technology Fast tOE Automatic Power Down Packages —28-Pin 300 mil DIP, SOJ, TSOP —28-Pin 300 mil Ceramic DIP —28-Pin 600 mil Ceramic DIP —28-Pin CERPACK
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P4C1256
--28-Pin
--32-Pin
144-bit
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PDF
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0148-t
Abstract: CY7C148 CY7C149 CY7C148-25DC up c1482 0148t L5045 CY7C148-35PC CY7C148-35DC MU 350
Text: CYPRESS SEMICONDUCTOR MbE D B DODbMll 2 5 0 ^ 2 b EÏCYP CY7C148 CY7C149 CYPRESS SEMICONDUCTOR Automatic power-down when dese lected 7C148 CMOS for optimum speed/power 25-ns access time Low active power — 440 mW (commercial) — 60S m\V (military) Low standby power (7C148)
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OCR Scan
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7C148)
25-ns
0GQb411
CY7C148
CY7C149
CY7C149-45KMB
CY7C149â
45LMB
0148-t
CY7C149
CY7C148-25DC
up c1482
0148t
L5045
CY7C148-35PC
CY7C148-35DC
MU 350
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PDF
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CY7C167A
Abstract: CY7C167A-35DMB
Text: CY7C167A '0 CYPRESS 16K x 1 Static RAM Features Functional D escription • Automatic power-down when dese lected • CMOS for optimum speed/power • High speed — 15 ns • Low active power — 275 mW • Low standby power — 83 mW • TTL-compatible inputs and outputs
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OCR Scan
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CY7C167A
CY7C167A
CY7C167Aâ
45DMB
20-Lead
300-Mil)
38-00093-C
CY7C167A-35DMB
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PDF
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7C192-12
Abstract: 7C192-15 A10C CY7C191 CY7C192 CY7C192-25PC
Text: CY7C191 CY7C192 ir CYPRESS 64K x 4 Static RAM with Separate I/O Features Functional Description • High speed T he CY7C191 and CY7C192 are high perform ance CM OS static RAM s orga nized as 65,536 x 4 bits with separate I/O. Easy m em ory expansion isprovided by ac
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OCR Scan
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CY7C191
CY7C192
CY7C191)
CY7C192
38-00076-J
tAW15!
tADvI15!
7C192-12
7C192-15
A10C
CY7C192-25PC
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PDF
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cy7c131-55nc
Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Text: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex
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OCR Scan
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CY7C130/CY7C131
CY7C140/CY7C141
CY7C140/
CY7C141
CY7C130/
CY7C131;
IDT7130
IDT7140
cy7c131-55nc
ZT12
CY7C130
CY7C131
CY7C140
CY7C141
IDT7140
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PDF
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7c251
Abstract: a1s smd smd code A1s smd diode code A1s CY7C251 CY7C254 65WMB
Text: CY7C251 CY7C254 y CYPRESS 16K x 8 Power-Switched and Reprogrammable PROM • Direct replacement for bipolar PRO M s • C apable o f w ithstanding > 2001V static discharge Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed
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OCR Scan
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CY7C251
CY7C254
7C251)
300-mil
600-mil
CY7C254
384-word
Y7C251
7c251
a1s smd
smd code A1s
smd diode code A1s
65WMB
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PDF
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automaticpower change over switch circuit diagram
Abstract: CY7C185 CY7C185A
Text: CY7C185A '* C YPRESS 8K x 8 Static RAM Features Functional D escription • High speed — 20 ns • CMOS for optimum speed/power T he CY7C185A is a high-perform ance CMOS static RA M organized as 8192 words by 8 bits. Easy mem ory expansion is provided by an active LO W chip enable
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OCR Scan
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CY7C185A
CY7C185A
300-miMilitary
CY7C185Aâ
25LMB
28-Pin
35DMB
28-Lead
automaticpower change over switch circuit diagram
CY7C185
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C251 CY7C254 CYPRESS SEMICONDUCTOR Features • CMOS for optimum speed/power • Windowed for reprogrammability • High speed — 45 ns 16,384 x 8 PROM Power Switched and Reprogrammable • TTL-compatible I/O • D irect replacement for bipolar PROMs • Capable o f w ithstanding > 2001V stat
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OCR Scan
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CY7C251
CY7C254
7C251)
300-m
600-mil
CY7C251
CY7C254
384-word
PROMs3802
CY7C254â
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PDF
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Untitled
Abstract: No abstract text available
Text: CY7C148 CY7C149 CYPRESS IK x 4 Static RAM Features • TTL-compatible inputs and outputs • Automatic power-down when dese lected 7C148 • CMOS for optimum speed/power • 25-ns access time • Low active power — 440 mW (commercial) — 605 mW (military)
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OCR Scan
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CY7C148
CY7C149
7C148)
25-ns
CY7C148
CY7C149
7C148
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PDF
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AS15H
Abstract: C1484 7C149
Text: CY7C148 CY7C149 IK x 4 Static RAM Features • TTL-compatible inputs and outputs • Automatic power-down when dese lected 7C148 • CMOS for optimum speed/power • 25-ns access time • Low active power — 440 mW (commercial) — 605 mW (military) • Low standby power (7C148)
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OCR Scan
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CY7C148
CY7C149
7C148)
25-ns
AS15H
C1484
7C149
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PDF
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LC 7258
Abstract: 7C266 203CE
Text: CY7C266 / CYPRESS 8K x 8 Power-Switched and Reprogrammable PROM Features • TTL-compatible I/O • CMOS for optimum speed/power • Direct replacement for 27C64 EPROMs • Windowed for reprogrammability • High speed — 20 ns commercial — 25 ns (military)
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OCR Scan
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CY7C266
CY7C266
32-Pin
28-Lead
600-Mil)
LC 7258
7C266
203CE
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PDF
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