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    412 PNP TRANSISTOR Search Results

    412 PNP TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096RHX/SAMPLE Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation
    ISL73096EHVX Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    412 PNP TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    fmba0656

    Abstract: No abstract text available
    Text: Section 4 Multi-Chip Transistors FMB100 NPN GPA . 4-3 FMB200 PNP GPA . 4-6


    Original     		FMB100 FMB200 FMB1020 FFB2222A FMB2222A MMPQ2222A FFB2227A FMB2227A FFB2907A FMB2907A fmba0656 PDF

    MJD122T4G

    Abstract: TRANSISTOR MJD122
    Text: MJD122 NPN MJD127 (PNP) Preferred Device Complementary Darlington Power Transistor DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose amplifier and low speed switching applications. SILICON POWER TRANSISTOR 8 AMPERES 100 VOLTS


    Original     		MJD122 MJD127 2N6040-2N6045 TIP120-TIP122 TIP125-TIP127 MJD122T4G TRANSISTOR MJD122 PDF

    PBLS4003V

    Abstract: transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg
    Text: AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board Rev. 01.00 — 20 June 2005 Application note Document information Info Content Keywords BISS, loadswitch, high side switch, supply line switch, SOT666, low VCEsat, RET Abstract


    Original     		AN10361 OT666 OT666, PBLS4003V transistor PDTC PBLS1501V PBLS1503V transistor sc 308 PBLS4001V PBLS4001Y PBLS1501Y PBLS1503Y Philips pmeg PDF

    ee-spy412

    Abstract: OMRON EE-1006 EE-1001 EE-1006 EE-2002 EE-SPY311 EE-SPY411
    Text:  EE-SPY311/411/312/412 Accurately Detects Objects Placed in Front of Mirror-like Background  A mirror-like background can be used when the distance between the sensor and the background is 20 mm or more  Detects an object as small as a 0.05-mm-dia. pure copper wire


    Original     		EE-SPY311/411/312/412 05-mm-dia. EE-2002 EE-SPY311 EE-SPY411 EE-SPY312 1-800-55-OMRON ee-spy412 OMRON EE-1006 EE-1001 EE-1006 EE-2002 EE-SPY311 EE-SPY411 PDF

    EE-SPY411

    Abstract: ee-spy412 OMRON EE-1006 EE-1001 EE-1006 EE-2002 EE-SPY311 transistor 412
    Text:  EE-SPY311/411/312/412 Accurately Detects Objects Placed in Front of Mirror-like Background  A mirror-like background can be used when the distance between the sensor and the background is 20 mm or more  Detects an object as small as a 0.05-mm-dia. pure copper wire


    Original     		EE-SPY311/411/312/412 05-mm-dia. EE-2002 EE-SPY311 EE-SPY411 EE-SPY312 EE-SPY411 ee-spy412 OMRON EE-1006 EE-1001 EE-1006 EE-2002 EE-SPY311 transistor 412 PDF

    marking 43A sot23

    Abstract: marking code 43a marking code R2 sot23 BC807 PDTB123TK PDTB123TS PDTB123TT PDTD123TK PDTD123TS PDTD123TT
    Text: PDTB123T series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 02 — 4 August 2005 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET family. Table 1: Product overview Type number


    Original     		PDTB123T PDTB123TK OT346 SC-59A O-236 PDTD123TK PDTB123TS SC-43A PDTD123TS PDTB123TT marking 43A sot23 marking code 43a marking code R2 sot23 BC807 PDTB123TK PDTB123TS PDTB123TT PDTD123TK PDTD123TS PDTD123TT PDF

    marking 43A sot23

    Abstract: BC807 PDTB123TK PDTB123TS PDTB123TT PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A
    Text: PDTB123T series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 03 — 16 November 2009 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET family. Table 1. Product overview Type number


    Original     		PDTB123T PDTB123TK OT346 SC-59A O-236 PDTD123TK PDTB123TS SC-43A PDTD123TS PDTB123TT marking 43A sot23 BC807 PDTB123TK PDTB123TT PDTD123TK PDTD123TS PDTD123TT SC-43A SC-59A PDF

    BC807

    Abstract: PDTB113Z PDTB113ZK PDTB113ZS PDTB113ZT PDTD113ZK PDTD113ZS PDTD113ZT SC-43A SC-59A
    Text: PDTB113Z series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 10 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview


    Original     		PDTB113Z PDTB113ZK OT346 SC-59A O-236 PDTD113ZK PDTB113ZS SC-43A PDTD113ZS PDTB113ZT BC807 PDTB113ZK PDTB113ZS PDTB113ZT PDTD113ZK PDTD113ZS PDTD113ZT SC-43A SC-59A PDF

    PDTA123TM

    Abstract: PDTA123TT PDTA123TU SC-75 PDTA123T PDTA123TE PDTA123TK PDTA123TS SC-101 SC-43A
    Text: PDTA123T series PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = open Rev. 01 — 7 March 2006 Product data sheet 1. Product profile 1.1 General description PNP Resistor-Equipped Transistors RET family. Table 1: Product overview Type number Package


    Original     		PDTA123T PDTA123TE OT416 SC-75 PDTC123TE PDTA123TK OT346 SC-59A O-236 PDTC123TK PDTA123TM PDTA123TT PDTA123TU SC-75 PDTA123TE PDTA123TK PDTA123TS SC-101 SC-43A PDF

    marking code R2 sot23

    Abstract: PDTB123E PDTB123ET 43A MARKING CODE delta pinning marking 43A sot23 marking code 43a sot23 marking code BC807 PDTB123EK
    Text: PDTB123E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview


    Original     		PDTB123E PDTB123EK OT346 SC-59A O-236 PDTD123EK PDTB123ES SC-43A PDTD123ES PDTB123ET marking code R2 sot23 PDTB123ET 43A MARKING CODE delta pinning marking 43A sot23 marking code 43a sot23 marking code BC807 PDTB123EK PDF

    BC807

    Abstract: PDTB113EK PDTB113ES PDTB113ET PDTD113EK PDTD113ES PDTD113ET SC-43A SC-59A PDTB113E
    Text: PDTB113E series PNP 500 mA, 50 V resistor-equipped transistors; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 27 April 2005 Product data sheet 1. Product profile 1.1 General description 500 mA PNP Resistor-Equipped Transistors RET family. Table 1: Product overview


    Original     		PDTB113E PDTB113EK OT346 SC-59A O-236 PDTD113EK PDTB113ES SC-43A PDTD113ES PDTB113ET BC807 PDTB113EK PDTB113ES PDTB113ET PDTD113EK PDTD113ES PDTD113ET SC-43A SC-59A PDF

    BD203

    Abstract: bdx77
    Text: BD201 BD203 BDX77 _ / v _ SILICON EPITAXIAL-BASE POWER TRANSISTORS NPN transistors in a plastic envelope. With their PNP complements BD202, BD204 and B D X78 they are primarily intended for use in hi-fi equipment delivering an output of 15 to 25 W into a 412 or


    OCR Scan     		BD201 BD203 BDX77 BD202, BD204 O-220. BD203 bdx77 PDF

    transistor CR NPN

    Abstract: transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp
    Text: FMY6 Transistor, dual, PNP and NPN Features Dimensions Units : mm available in SMT5 (FMT, SC-74A) package package marking: FMY6; Y6 FMY6 (SMT5) 2.9 l 0.2 1.9 ± 0.2 package contains an NPN (2SC2411K) and a PNP (2SA1036K) transistor with common emitters large collector current


    OCR Scan     		SC-74A) 2SC2411K) 2SA1036K) transistor CR NPN transistor cr marking FMY6 412 pnp transistor pnp transistor marking code 412 pnp transistor code 412 transistor CR pnp PDF

    IC A 103 GF

    Abstract: 2SA1824 2SC4728
    Text: Ordering number: EN 3872 SMÊYO tI 2SA1824/2SC4728 No.3872 PNP/NPN Epitaxial Planar Silicon Transistors 50V/5A Switching Applications I Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.


    OCR Scan     		EN3872 2SA1824/2SC4728 2SA1824 C4728 2SA1824 2SA1824/2SC4728 2SC4728 IC A 103 GF 2SC4728 PDF

    it3713

    Abstract: SR2204 L KSR1204 KSR2204 ri32
    Text: [SAMSUNG SEM IC O N D U CTO R I 7*11,4142 INC KSR2204 0007141 'I | PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In • S w itch in g circu it, Inverter, Interface circu it Driver c ircu it • B u ilt In b ia s R e s is to r ( R ,= 4 7 K n r R ,= 4 7 K O )


    OCR Scan     		KSR2204 47Kllr KSR1204 O-82S it3713 SR2204 L KSR1204 ri32 PDF

    D45c3 TRANSISTOR

    Abstract: D45CZ D45C1 D45C3 D45C2 D45C4 D43C1 D44C D45C D45C10
    Text: D45C Series PNP POWER TRANSISTORS -30 - -80 VOLTS -4 AMP, 30 WATTS COMPLEMENTARY TO THE D44C SERIES The General Electric D45C is a power transistor designed for various specific and general purpose applications, such as: output and driver stages of amplifiers operating at frequencies


    OCR Scan     		TQ-220AB 300ms D45c3 TRANSISTOR D45CZ D45C1 D45C3 D45C2 D45C4 D43C1 D44C D45C D45C10 PDF

    2N3380

    Abstract: 2N3307 MOTOROLA
    Text: MOTOROLA SC { D I O D E S / O P T O } 6367255 MOTOROLA SC 34 DE | h3ti7SSS □ □ 3 7 c]fll DIODES/OPTO 34C • f 37981 7- i SILICON SM ALL-SIGNAL TRANSISTOR DICE (continued) / - '* • 2C3308 die n o . — pnp LINE SOURCE — DSL63 T h is die provides perform ance similar to that of the following device types:


    OCR Scan     		DSL63 2C3308 2N3307 2N3308 2N3380* 2N3380 2N3307 MOTOROLA PDF

    POWER TRANSISTORS 10A 400v pnp

    Abstract: NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4 .\. v ii I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		T-33-Ã flES40aa D0D07Ã 19S00 2N389 /173A 2N424 2N1016B /102A POWER TRANSISTORS 10A 400v pnp NPN Transistor 10A 400V to3 2N1489 2N1468 pnp 400v 10a 1526a 2NXXXX 2N6350 2N1400 2N6352 PDF

    2SA142

    Abstract: 2SA1421 2SC365
    Text: Ordering number : EN 1683A 2SA1421/2SC3654 No.l683A PNP/ NPN Epitaxial Planar Silicon Transistors Switching Applications with Bias Resistor Use . Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=22ki2


    OCR Scan     		l683A 2SA1421/2SC3654 22kil 2SA1421 2034/2034A SC-43 7tlt17D7b 2SA142 2SC365 PDF

    B0242

    Abstract: No abstract text available
    Text: M O TO R OL A SC X S T R S /R 15E D F I b 3 h 7 aSM MOTOROLA SEM ICONDUCTOR TECHNICAL DATA COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS 0004727 | NPN PNP BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C . . . designed for use in general purpose amplifier and switching


    OCR Scan     		BD241 BD241A BD241B BD241C BD242 BD242A BD242B BD242C BD241, B0242 PDF

    2NXXXX

    Abstract: NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package
    Text: 62S4Ò22 S I L I üuin TRANSISTOR CORP u j . l 4. \ . v i i I n n m ü j. _88DQ0787 STOR CORP flfl D .T -A B -ß DE |fl2S40aa 000 Q7Ö7 S T • 2 .3 -1 / f NUMERICAL INDEX TO JAN QUALIFIED POWER TRANSISTORS 2NTYPE* JAN JAN TX JANTXV MIL-S19500 PAGETABLE 2N389


    OCR Scan     		88DQ0787 fl2S40aa 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1480 2N1481 2N1484 2NXXXX NPN Transistor 10A 400V to3 transistor 2N 3440 TO-59 Package c 3420 transistor 2n3741 MIL transistor 2n 523 POWER TRANSISTORS 10A 400v pnp power transistors table TO111 package PDF

    d44h10

    Abstract: D45H
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IIPN D44H Series* Com plem entary Silicon Power Transistors PNP D45H Series* . . . for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SB1169, 2SB1169A b<ï32aS2 0 G lb 2 3 3 S8b 2SB1169, 2SB1169A Silicon PNP Epitaxial Planar Type Package Dim ensions Pow er Amplifier U nit : mm • Features • High DC current gain I i f e and good linearity • Low collector-emitter voltage ( V c e )


    OCR Scan     		2SB1169, 2SB1169A 32aS2 2SB1169 10MHz PDF

    2SB1169

    Abstract: 2SB1169A
    Text: Power Transistors b < i3 2 a S 2 0 G lt 2 3 3 2SB1169, 2SB1169A Sflb 2SB1169, 2SB1169A Silicon PNP Epitaxial Planar Type Package Dimensions Power Amplifier Unit I mm • Features • High DC current gain I i f e and good linearity • Low collector-emitter voltage ( V c e )


    OCR Scan     		32aS2 0Glt233 2SB1169, 2SB1169A 2SB1169 2SB1169A PDF