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    em 223

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR s TSM3441 20V P-Channel MOSFET b RoHS CO M PLIANCE PRODUCT SUM M ARY SO T-26 654 P in D e fin itio n : 1. Drain 2. Drain 3. G ate V o s V ) 6. Drain 5, Drain 4 . Source R o W rn Q ) b (A ) 90 @ Vos = -4.5V -3.3 1 1 0 @ V gs = -2.5V -2.9


    OCR Scan     		PDF TSM3441 3441C em 223

    SOT-26 ci

    Abstract: TSM3441CX6 607ts
    Text: E TAIWAN TSM3441 S E M IC O N D U C T O R 20V P-Channei MOSFET pb RoHS CO M PLIANCE PRODUCT SUM M ARY P in D e f in it io n : V os (V ) 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source •20 1 23 Features R Ds(on)(mQ) b (A ) 90 @ Vos = -4.5V -3.3 110@ Vgs = -2.5V


    OCR Scan     		PDF M3441 OT-26 TSM3441CX6 OT-26 SOT-26 ci 607ts

    mosfet marking code AL sot-23

    Abstract: p-channel sot-23 .5A TSM3401CX 41YML ABV MARKING
    Text: TAIWAN S SEMICONDUCTOR pb RoHS TSM3401 30V P-Channei MOSFET CO M PLIAN C E SOT-23 PRODUCT SUMMARY Pin Definition: 1. G a te -30 Features Advance Trench Proce s s Tech no logy • High Density Cell Design for Ultra Low On-resistance • PA Switch 60 @ VGS = 10V


    OCR Scan     		PDF M3401 OT-23 TSM3401CX OT-23 mosfet marking code AL sot-23 p-channel sot-23 .5A 41YML ABV MARKING