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    Dataman DIL32/SOIC32 ZIF 445MIL

    |Dataman DIL32/SOIC32 ZIF 445MIL
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    Vishay Intertechnologies 376D226X5035R2BRZ

    Tantalum Capacitors - Solid Leaded 22UF 35V 5% C R-FR
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    445MIL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GLT4160L04

    Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
    Text: G -LINK GLT4160L04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Nov 2001 Rev.3.2 Features : Description : ∗ ∗ ∗ ∗ The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page


    Original     		PDF GLT4160L04 GLT4160L04 2048-cycle 300mil GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3

    95051

    Abstract: No abstract text available
    Text: G -LINK GLT440L08 512K X 8 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Oct 2001 Rev.2.0 Features : Description : ∗ ∗ ∗ The GLT440L08 is a 524,288 x 8 bit highperformance CMOS dynamic random access memory. The GLT440L08 offers Fast Page mode with Extended Data Output has asymmetric address


    Original     		PDF GLT440L08 GLT440L08 1024-cycle Current-160mA 300mil 330mil 445mil 400mil 95051

    tba 2003

    Abstract: No abstract text available
    Text: G -LINK GLT6400L16 Ultra Low Power 256k x 16 CMOS SRAM May 2003 Rev. 1.4 Features : Description : ∗ The GLT6400L16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		PDF GLT6400L16 GLT6400L16 70ns/85ns 32TYP 75TYP tba 2003

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6200L08 Ultra Low Power 256k x 8 CMOS SRAM Aug 2001 Rev. 1.2 Features : Description : ∗ The GLT6200L08 is a low power CMOS Static RAM organized as 262,144 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		PDF GLT6200L08 GLT6200L08 32-sTSOP. 48Ball 36TYP 75TYP

    GLT41216-30J4

    Abstract: No abstract text available
    Text: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Aug 1999 Rev.2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has


    Original     		PDF GLT41216 GLT41216 256-cycle GLT44016-40J4 256Kx16 400mil 2701Northwestern GLT41216-30J4

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT440M04 1M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Apr. 2002 Rev. 2.2 Features : Description : ∗ ∗ ∗ ∗ The GLT440M04 is a high-performance CMOS dynamic random access memory containing 4,194,304 bits organized in a x4 configuration. The GLT440M04 offers page


    Original     		PDF GLT440M04 GLT440M04 1024-cycle -Onl08-15T 128Kx8 300mil GLT44016-40J4

    GLT4160L04

    Abstract: GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3
    Text: G -LINK GLT4160L04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Apr 2003 Rev.4.1 Features : Description : ∗ ∗ ∗ ∗ The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page


    Original     		PDF GLT4160L04 GLT4160L04 2048-cycle 400mil 600mil) 48Pin GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3 GLT4160L04E-70J3 GLT4160L04S-40J3

    FPM RAM

    Abstract: No abstract text available
    Text: G -LINK GLT4161L16 1M X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE Oct 2002 Rev.2.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT4161L16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4161L16 offers Fast Page mode and has both BYTE WRITE


    Original     		PDF GLT4161L16 GLT4161L16 1024-cycle 40/42L 400MIL 44/50L 400MIL FPM RAM

    SPMC02A

    Abstract: No abstract text available
    Text: S PMC02A SP Microcontroller MAY. 20, 2003 Version 1.7 SUNPLUS TECHNOLOGY CO. reserves the right to change this documentation without prior notice. Information provided by SUNPLUS TECHNOLOGY CO. is believed to be accurate and reliable. However, SUNPLUS TECHNOLOGY CO. makes no warranty for any errors which may appear in this document.


    Original     		PDF SPMC02A SPMC02A

    GLT725608-15TS

    Abstract: GLT725608-15J3 GLT725608 GLT725608-12J3 GLT725608-12TC GLT725608-12TS GLT725608-15TC GLT725608-20J3 GLT725608-20TS G-LINK TECHNOLOGY
    Text: G -LINK GLT725608 Ultra High Performance 32K x 8 Bit CMOS STATIC RAM Feb, 2001 Rev.2.4 Features : Description : ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ GLT725608 is high performance 256K bit static random access memory organized as 32K by 8 bits and operate at a single 5 volt supply. Fabricated with


    Original     		PDF GLT725608 GLT725608 330mil GLT725608-15TS GLT725608-15J3 GLT725608-12J3 GLT725608-12TC GLT725608-12TS GLT725608-15TC GLT725608-20J3 GLT725608-20TS G-LINK TECHNOLOGY

    32PIN

    Abstract: GLT6020L08 GLT6020L08I
    Text: G -LINK Preliminary datasheet 256K X 8 Bit GLT6020L08 SEPT 20, 2004(Rev.0.3) 2Mb Low Power Asynchronous PSRAM Features • Fast access time: 70, 85 ns • Temperature: 0 °C~70 °C /-25°C~85°C/ -40°C~85 °C • CMOS low operating voltage :3.0V(2.7~3.3V)


    Original     		PDF GLT6020L08 32Pin( GLT6020L08 32PIN GLT6020L08I

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT416016 1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 2000 Rev.3.0 Features : Description : ∗ ∗ 1,048,576 words by 16 bits organization. Fast access time and cycle time. ∗ ∗ Dual CAS Input. Low power dissipation. The GLT416016 is a 1,048,576 x 16 bit highperformance CMOS dynamic random access


    Original     		PDF GLT416016 GLT416016 1024-cycle pa15T 128Kx8 300mil GLT44016-40J4 256Kx16

    GLT41016

    Abstract: GLT41016-35J4 GLT41016-40J4
    Text: G -LINK GLT41016 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT May 1997 Rev 1 Features : Description : The GLT41016 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41016 offers Fast Page mode with Extended Data Output, and has


    Original     		PDF GLT41016 GLT41016 256-cycle 400mil 2701Northwestern GLT41016-35J4 GLT41016-40J4

    GLT51280L32

    Abstract: No abstract text available
    Text: G-LINK GLT51280L32 CMOS Synchronous DRAM Nov 2004 Rev0.0 DESCRIPTION The G-Link GLT51280L32 is a high speed 134,217,728 bits CMOS Synchronous DRAM organized as 4 banks of 1,048,576 words x 32 bits. GLT51280L32 is offering fully synchronous operation and is referenced to a positive edge of the clock. All inputs and outputs are


    Original     		PDF GLT51280L32 GLT51280L32 86-pin

    EDO Corporation

    Abstract: SOJ 24 GLT4160L04 GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3
    Text: G -LINK GLT4160L04 4M X 4 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Apr 2003 Rev.4.1 Features : Description : ∗ ∗ ∗ ∗ The GLT4160L04 is a high-performance CMOS dynamic random access memory containing 16,777,216 bits organized in a x4 configuration. The GLT4160L04 offers page


    Original     		PDF GLT4160L04 GLT4160L04 2048-cycle 400mil 600mil) 48Pin EDO Corporation SOJ 24 GLT4160L04-40J3 GLT4160L04-50J3 GLT4160L04-60J3 GLT4160L04-70J3 GLT4160L04E-40J3 GLT4160L04E-50J3 GLT4160L04E-60J3

    GLT4160M16-60TC

    Abstract: No abstract text available
    Text: G -LINK GLT4160M16 1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Dec 2001 Rev.1.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT4160M16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4160M16 offers Fast Page mode with Extended Data Output,


    Original     		PDF GLT4160M16 GLT4160M16 1024-cycle 48Pin 2701Northwestern 44/50L GLT4160M16-60TC

    GLT4160L16P-50TC

    Abstract: EDO Corporation GLT4160L16S-45TC mark edo GLT4160L16P-60TC TSOPII 44 1M x 16 EDO RAM
    Text: G -LINK GLT4160L16 1M X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Apr 2003 Rev.4.1 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT4160L16 is a 1,048,576 x 16 bit high-performance CMOS dynamic random access memory. The GLT4160L16 offers Fast Page mode with Extended Data Output,


    Original     		PDF GLT4160L16 GLT4160L16 1024-cycle 300mil 330mil 445mil GLT4160L16P-50TC EDO Corporation GLT4160L16S-45TC mark edo GLT4160L16P-60TC TSOPII 44 1M x 16 EDO RAM

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M08 Ultra Low Power 512k x 8 CMOS SRAM Aug 2001 Rev.3.0 Features : Description : ∗ The GLT6400M08 is a low power CMOS Static RAM organized as 524,288 x 8 bits. Easy memory expansion is provided by an active LOW CE1 an Low-power consumption.


    Original     		PDF GLT6400M08 GLT6400M08 120ns. 445mil

    GLT710008

    Abstract: 28-pin SOJ SRAM 512k
    Text: G -LINK GLT7256L08 Ultra High Performance 3.3V 32K x 8 Bit CMOS STATIC RAM Mar 2000 REV. 2.0 Features : Description : ∗ 32K x 8-bit organization. ∗ Very high speed – 8,10,12,15 ns. ∗ Low standby power. ∗ ∗ ∗ ∗ ∗ ∗ GLT7256L08 are high performance 256K bit static


    Original     		PDF GLT7256L08 GLT7256L08 GLT7256L08. 300mil GLT710008 28-pin SOJ SRAM 512k

    GLT41216-40TC

    Abstract: GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC
    Text: G -LINK GLT41216 64K X 16 CMOS DYNAMIC RAM WITH EXTENDED DATA OUTPUT Feb 2004 Rev.2.2 Features : Description : ∗ ∗ ∗ ∗ ∗ The GLT41216 is a 65,536 x 16 bit highperformance CMOS dynamic random access memory. The GLT41216 offers Fast Page mode with Extended Data Output, and has


    Original     		PDF GLT41216 GLT41216 256-cycle 48Pin 60Ball GLT41216-40TC GLT41216-30J4 GLT41216-30TC GLT41216-35J4 GLT41216-35TC GLT41216-40J4 GLT41216-45J4 GLT41216-45TC

    Untitled

    Abstract: No abstract text available
    Text: G -LINK GLT6400M16 Ultra Low Power 256k x 16 CMOS SRAM May 2001 Rev. 2.0 Features : Description : ∗ The GLT6400M16 is a low power CMOS Static RAM organized as 262,144 words by 16 bits. Easy memory expansion is provided by an active LOW CE1 and OE pin and active HIGH CE2.


    Original     		PDF GLT6400M16 GLT6400M16 120ns. 32TYP 75TYP

    G-Link Technology

    Abstract: G-Link eprom 2701 SOP-330mil 95051
    Text: G -LINK GLT625608 32K x 8 SLOW SPEED CMOS STATIC RAM Feb, 2001 Rev. 1.1 Features : Description : GLT625608 is a 262,144-bit static random access ∗ Available in 70/100ns(MAX.) ∗ Automatic power-down when chip disabled memory organized as 32,768 words by 8 bits and


    Original     		PDF GLT625608 GLT625608 144-bit 70/100ns 330mil G-Link Technology G-Link eprom 2701 SOP-330mil 95051

    GLT5640AL16

    Abstract: No abstract text available
    Text: G -LINK GLT5640AL16 4M X 16 CMOS Synchronous Dynamic RAM Feb 2004 Rev.0.1 Description The GLT5640AL16 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 1,048,576 x 16 x 4 (word x bit x bank), respectively. The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture and clock frequency up


    Original     		PDF GLT5640AL16 GLT5640AL16 864-bit 183MHz. 54-pin

    GLT725608

    Abstract: GLT725608-12TC GLT725608-12TS GLT725608-15J3 GLT725608-15TC GLT725608-15TS GLT725608-20J3 GLT725608-20TS GLT725608-12J3 FPM RAM
    Text: G -LINK GLT725608 Ultra High Performance 32K x 8 Bit CMOS STATIC RAM Feb, 2004 Rev.2.5 Features : Description : ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ ∗ 32K x 8-bit organization. Very high speed 12,15,20 ns. Low standby power. Fully static operation 5V±10% power supply.


    Original     		PDF GLT725608 GLT725608 330mil GLT725608-12TC GLT725608-12TS GLT725608-15J3 GLT725608-15TC GLT725608-15TS GLT725608-20J3 GLT725608-20TS GLT725608-12J3 FPM RAM