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Untitled Abstract: No abstract text available Text: KMM364E1600AK/AS KMM364E1680AK/AS DRAM MODULE KMM364E1600AK/AS & KMM364E1680AK/AS Fast Page with EDO Mode 16Mx64 DRAM DIMM based on 16Mx4, 4K & 8K Refresh, 5V FEATURES GENERAL DESCR IPTIO N CMOS 16Mx4bit DRAMs in SOJ/TSOP-II 400mii • Part Identification	OCR Scan	PDF	KMM364E1600AK/AS KMM364E1680AK/AS KMM364E1680AK/AS 16Mx64 16Mx4, 16Mx4bit 400mii KMM364E1600AK KMM364E1600AS
44C16104A Abstract: 44c16104 Text: KM M53632004A K/A KG DRAM MODULE KM M53632004AK/AKG EDO Mode 32M X 36 DRAM SIMM Using 16Mx4 & 16Mx1 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M53632004A is a 32Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53632004A consists of sixteen CM O S 16Mx4bits and	OCR Scan	PDF	M53632004A M53632004AK/AKG 16Mx4 16Mx1 32Mx36bits M53632004AK cycles/64ms 53632004AKG 44C16104A 44c16104
Untitled Abstract: No abstract text available Text: DRAM MODULE KMM53232004AK/AKG KMM53232004AK/AKG EDO Mode 32M X 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53232004A is a 32Mx32bits RAM high density KM M 53232004A memory consists of module. sixteen Dynamic The Samsung	OCR Scan	PDF	KMM53232004AK/AKG 16Mx4, 3232004A 32Mx32bits 16Mx4bits KMM53232004AK/AKG M53232004AK cycles/64ms M53232004AKG
Untitled Abstract: No abstract text available Text: DRAM M ODULE KM M 3 72E320 8 0B K Buffered 32Mx72 DIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM M ODULE KM M 3 72E320( 8) 0B K Revision History Version 0.0 (Sept, 1997) ; Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS.	OCR Scan	PDF	72E320( 32Mx72 16Mx4 372E320 16Mx4, KMM372E320 32Mx72bits
km44c16104ak Abstract: 44c16104 Text: DRAM MODULE KMM53616004AK/AKG KMM53616004AK/AKG Fast Page Mode 16M x 36 DRAM SIMM Using 16Mx4 & 16Mx1, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KM M 53616004A is a 16Mx36bits RAM high density memory module. The Dynamic Samsung KM M 53616004A consists of eight CM O S 16Mx4bits DRAMs	OCR Scan	PDF	KMM53616004AK/AKG KMM53616004AK/AKG 16Mx4 16Mx1, 3616004A 16Mx36bits M53616004AK cycles/64ms M53616004AKG km44c16104ak 44c16104
1004CL Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page	OCR Scan	PDF	KM41C1000D# KM41C1000D-L# 256Kx4) 256Kx4 KM44C256D# KM44C256D-L# 128Kx8 KM48C128# KM48C128 KM48C124# 1004CL KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
44c16104 Abstract: TC 32 DON Text: KM44C16004B, 44C16104B CMOS DRAM 16M x4 b it CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data O ut Mode CMOS DRAMs. Extended Data O ut Mode offers high speed random access of memory cells within the sam e row. Refresh cycle 4K Ref. or 8K Ref. , access time (-45, -5, or -6), package type (SOJ or	OCR Scan	PDF	KM44C16004B, KM44C16104B 16Mx4 KM44C16004B 44C16104B 400mil 44c16104 TC 32 DON
M53216 Abstract: 16Mx32-bit Text: DRAM MODULE KM M53216004AK/A KG KMM53216004AK/AKG EDO Mode 16M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung K M M 53216004A is a 16Mx32bits RAM high density memory module. The Dynamic Samsung -• Part Identification	OCR Scan	PDF	KMM53216004AK/AKG 16Mx4, 3216004A 16Mx32bits M53216004AK/A 53216004AK cycles/64ms 53216004AKG 1250mil) M53216 16Mx32-bit