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    4717E Search Results

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    4717E Price and Stock

    Vishay Semiconductors MMSZ4717-E3-08

    DIODE ZENER 43V 500MW SOD123
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    DigiKey MMSZ4717-E3-08 Cut Tape 11,983 1
    • 1 $0.15
    • 10 $0.105
    • 100 $0.15
    • 1000 $0.047
    • 10000 $0.047
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    MMSZ4717-E3-08 Digi-Reel 11,983 1
    • 1 $0.15
    • 10 $0.105
    • 100 $0.15
    • 1000 $0.047
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    MMSZ4717-E3-08 Reel 9,000 3,000
    • 1 -
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    • 10000 $0.04035
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    Maxim Integrated Products MAX4717ETB-T

    IC SW SPDT-NO/NCX2 3OHM 10TDFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MAX4717ETB-T Digi-Reel 7,960 1
    • 1 $6.17
    • 10 $4.066
    • 100 $2.8989
    • 1000 $2.375
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    MAX4717ETB-T Cut Tape 7,960 1
    • 1 $6.17
    • 10 $4.066
    • 100 $2.8989
    • 1000 $2.375
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    MAX4717ETB-T Reel 7,500 2,500
    • 1 -
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    Maxim Integrated Products MAX4717EUB-

    IC SWITCH SPDT X 2 4.5OHM 10UMAX
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    DigiKey MAX4717EUB- Tube 6,386 1
    • 1 $5
    • 10 $3.401
    • 100 $2.75
    • 1000 $2.75
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    Maxim Integrated Products MAX4717EUB-T

    IC SWITCH SPDT X 2 4.5OHM 10UMAX
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    DigiKey MAX4717EUB-T Digi-Reel 3,543 1
    • 1 $7.04
    • 10 $4.787
    • 100 $3.5521
    • 1000 $2.88251
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    MAX4717EUB-T Cut Tape 3,543 1
    • 1 $7.04
    • 10 $4.787
    • 100 $3.5521
    • 1000 $2.88251
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    MAX4717EUB-T Reel 2,500 2,500
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    onsemi NLAS4717EPFCT1G

    IC SW SPDTX2 3.5OHM 10MICROBUMP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NLAS4717EPFCT1G Cut Tape 2,135 1
    • 1 $1.5
    • 10 $1.341
    • 100 $1.0454
    • 1000 $0.68175
    • 10000 $0.68175
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    Avnet Americas NLAS4717EPFCT1G Reel 0 Weeks, 2 Days 1,283
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    • 10000 $0.46432
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    Rochester Electronics NLAS4717EPFCT1G 21,965 1
    • 1 $0.6563
    • 10 $0.6563
    • 100 $0.6169
    • 1000 $0.5579
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    Flip Electronics NLAS4717EPFCT1G 45,000
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    4717E Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NLAS4717EPMTR2G

    Abstract: NLAS4717EP MAX4717 NLAS4717EPFCT1G
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


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    PDF NLAS4717EP NLAS4717EP WQFN-10: WQFN-10 488AQ NLAS4717EP/D NLAS4717EPMTR2G MAX4717 NLAS4717EPFCT1G

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/ z Voltage Operation: 1.8V to 5.5V double-throw SPDT CMOS analog switch designed to z On-Resistance: 4.5Ω (TYP) at 5.0V


    Original
    PDF SGM4717EP 300MHz SGM4717EP 300MHz 300MHz) -57dB 10MHz -99dB

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G 489AA
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    PDF NLAS4717EP NLAS4717EP Micro10: NLAS4717EP/D MAX4717 NLAS4717EPFCT1G 489AA

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    PDF NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    PDF NLAS4717EP Micro10: 4717EP 4717E Micro10 NLAS4717EP/D Microbump-10

    MAX4717

    Abstract: NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    PDF NLAS4717EP NLAS4717EP WQFN-10: Microbump-10 489AA 65not NLAS4717EP/D MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G 4717EP

    4717EP

    Abstract: MAX4717 NLAS4717EP NLAS4717EPFCT1G NLAS4717EPMTR2G
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub-micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    PDF NLAS4717EP NLAS4717EP WQFN-10: 4717EP NLAS4717EP/D 4717EP MAX4717 NLAS4717EPFCT1G NLAS4717EPMTR2G

    SGM4717EP

    Abstract: No abstract text available
    Text: 4.5Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch 4717EP GENERAL DESCRIPTION FEATURES The 4717EP is a dual, bidirectional, single-pole/double -throw SPDT CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. It features high-bandwidth (300MHz) and low ON-resistance (4.5Ω


    Original
    PDF 300MHz SGM4717EP SGM4717EP 300MHz)

    Untitled

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    PDF NLAS4717EP NLAS4717EP 4717EP 489AA NLAS4717EP/D

    4717EP

    Abstract: No abstract text available
    Text: 4717EP 4.5 W High Bandwidth, Dual SPDT Analog Switch The 4717EP is an advanced CMOS analog switch fabricated in sub−micron silicon gate CMOS technology. The device is a dual independent Single Pole Double Throw SPDT switch featuring low RDS(on) of 4.5 W at 3.0 V.


    Original
    PDF NLAS4717EP WQFN-10: 4717EP Microbump-10 489AA NLAS4717EP/D