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Kyocera AVX Components LMXS04C4M4R3CTAS POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M4R3CTAS)
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Avnet Americas	LMXS04C4M4R3CTAS	Reel		18 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components LMXS04C4M471CTAS POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M471CTAS)
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Avnet Americas	LMXS04C4M471CTAS	Reel		18 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components LMXS04C4M4R7CTAS POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M4R7CTAS)
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Avnet Americas	LMXS04C4M4R7CTAS	Reel		18 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Kyocera AVX Components LMXS04C4M470CTAS POWER INDUCTOR - Tape and Reel (Alt: LMXS04C4M470CTAS)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	LMXS04C4M470CTAS	Reel		18 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Alliance Semiconductor Corporation AS4C4M4F1-60JCT
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Bristol Electronics	AS4C4M4F1-60JCT		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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4C4M4 Datasheets (9)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
4C4M4		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF
4C4M4EOQ-50JC		Alliance Semiconductor	4M x 4 CM0S QuadCAS DRAM (EDO) family, 50ns RAS access time		Original	PDF
4C4M4EOQ-50TC		Alliance Semiconductor	4M x 4 CM0S QuadCAS DRAM (EDO) family, 50ns RAS access time		Original	PDF
4C4M4EOQ-60JC		Alliance Semiconductor	4M x 4 CM0S QuadCAS DRAM (EDO) family, 60ns RAS access time		Original	PDF
4C4M4EOQ-60TC		Alliance Semiconductor	4M x 4 CM0S QuadCAS DRAM (EDO) family, 60ns RAS access time		Original	PDF
4C4M4FOQ-50JC		Alliance Semiconductor	5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode)		Original	PDF
4C4M4FOQ-50TC		Alliance Semiconductor	5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode)		Original	PDF
4C4M4FOQ-60JC		Alliance Semiconductor	5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode)		Original	PDF
4C4M4FOQ-60TC		Alliance Semiconductor	5V 4M x 4 CMOS QuadCAS DRAM (fastpage mode)		Original	PDF

4C4M4 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
4C4M4EOQ-50JC Abstract: 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC Text: March 2001 4C4M4EOQ 4C4M4E1Q 4M ✕ 4 CMOS QuadCAS DRAM EDO family Features • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption	Original	PDF	28-pin 24/26-pin 4C4M4EOQ-50JC 4C4M4EOQ-60JC 4C4M4EOQ-50TC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC 4C4M4EOQ-50JC 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC AS4C4M4E1Q-50JC
4C4M4FOQ-50JC Abstract: 4C4M4FOQ-50TC 4C4M4FOQ-60JC TSOP300 Text: March 2001 4C4M4FOQ 4C4M4F1Q 5V 4M X 4 CMOS QuadCAS DRAM fastpage mode Features • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time - 12/15 ns CAS access time • Low power consumption	Original	PDF	28-pin 4C4M4FOQ-50JC 4C4M4FOQ-50TC 4C4M4FOQ-60JC TSOP300
on 707 Abstract: 4C4M4FOQ-50JC 4C4M4FOQ-50TC Text: $GYDQFH#LQIRUPDWLRQ $67&707 24 $67&707)44 89#70#✕#7#&026#4XDG #7#&026#4XDG&$6 &$6#'5$0#+IDVWSDJH#PRGH, 89#70# #7#&026#4XDG &$6 #'5$0#+IDVWSDJH#PRGH, )HDWXUHV • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time	Original	PDF	28-pin 4C4M4FOQ-50TC 4C4M4FOQ-60TC 24/26-pin AS4C4M4F1Q-50JC AS4C4M4F1Q-60JC AS4C4M4F1Q-50TC AS4C4M4F1Q-60TC on 707 4C4M4FOQ-50JC 4C4M4FOQ-50TC
4c4m4 Abstract: No abstract text available Text: $GYDQFH#LQIRUPDWLRQ $67&707 24 $67&707(44 70#✕#7#&026#4XDG 70# #7#&026#4XDG&$6 #7#&026#4XDG&$6#'5$0#+('2,#IDPLO\ &$6#'5$0#+('2,#IDPLO\ HDWXUHV • Organization: 4,194,304 words x 4 bits • High speed - 50/60 ns RAS access time - 25/30 ns column address access time	Original	PDF	28-pin 24/26-pin 4C4M4EOQ-50JC 4C4M4EOQ-50TC 4C4M4EOQ-60JC 4C4M4EOQ-60TC 4c4m4
NEC D2732 Abstract: 41C1000 41256 81c4256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732 Text: New Page 1 DRAM ORGANIZATION/ DENSITY FUJISTU GOLDSTAR HITACHI HYNDAI MB GM HM HY 256K x 1 256K 81256 71C256 51256 MICRON MT 53C256 1256 MITSUBISHI M5M 4256 1M x 1(1M) 81C1000 71C1000 511000 531000 4C1024 41000 256K x 4(1M) 81C4256 71C4256 514256 534256 4C4256	Original	PDF	71C256 53C256 81C1000 71C1000 4C1024 81C4256 71C4256 4C4256 71C4400 4C4001 NEC D2732 41C1000 41256 6264 SRAM 44256 dram NEC 2732 nec 4217400 814400 Texas Instruments eprom 2732
Untitled Abstract: No abstract text available Text: V, M in n n N I m t 4C4M4Ai / b i 4 MEG X 4 DRAM 4 MEG x 4 DRAM DRAM FEATURES • Industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single power supply: +5V *10% • Low power, 3mW standby; 200mW active, typical Al	OCR Scan	PDF	200mW 048-cycle 096-cycle Q1113Ã
j13000 Abstract: dram 4mx4 DD01B J1-30004-A LM 327 CN til 702 datasheet 4lc4m4e0 4c4m4 29SF Text: H igh P erform an ce 4M x4 CMOS DRAM « II Features • Organization: 4,194,304 words x 4 bits • High speed A S4C 4M 4E0 A S4LC4M 4E0 4M X 4 CMOS EDO DRAM Advance information JEDEC standard package - 400 mil, 24/26-pin SOJ 5V power supply 4C4M4E0 3V power supply (4LC4M4E0)	OCR Scan	PDF	24/26-pin AS4LC4M4E0-60TC 1-30004-A. 1M16E0 0004-A. DD01b03 j13000 dram 4mx4 DD01B J1-30004-A LM 327 CN til 702 datasheet 4lc4m4e0 4c4m4 29SF
Untitled Abstract: No abstract text available Text: Advance information Features • O rganization: 4 ,1 9 4 ,3 0 4 w o rd s x 4 bits • H ig h speed - 50/6 0 ns RAS access time - 2 5/ 3 0 ns column address access time - 10/12 ns CAS access time • Low p o w er consum ption - Active: 908 mW max - Standby: S.S mW max, CMOS I/O	OCR Scan	PDF	24/26-pin 24/26-p E0-60JC AS4LC4M4E0-50TC AS4LC4M4E0-60TC U-30004-A.
4lc4m4e0 Abstract: No abstract text available Text: H i ” li P e r l o m i a i H r •■ \S4 4M 4H II AS4I C 4 M 4 I 0 Jl A 4M X4 CMOSDRAM t M x 4 C M O S I.IH) DRAM Advance information Features • TTL-compatible, three-state I/O • JEDEC standard package • Organization: 4,194,304 words x 4 bits • High speed	OCR Scan	PDF	/30/3S 24/26-pin 24-pin 4lc4m4e0
MT4C4M4 Abstract: No abstract text available Text: PRELIMINARY 4C4M4B1 4 MEG X 4 DRAM MICRON I ItChNOLOCY INC. DRAM 4 MEG x 4 DRAM 5V, FAST PAGE MODE PIN ASSIGNMENT Top View • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CMOS silicon-gate process • Single +5.0V ±10% power supply	OCR Scan	PDF	250mW 048-cycle 24/26-Pin 001551b MT4C4M4
4C4M4B1 Abstract: No abstract text available Text: PRELIM INARY 4C4M4B1 4 MEG X 4 DRAM l^ iiC R n r s j DRAM 4 MEG x 4 DRAM 5V, FAST PAGE MODE PIN A SSIG N M E N T Top View • JEDEC- and industry-standard x4 pinout, timing, functions and packages • High-performance CM OS silicon-gate process • Single +5.0V ±10% pow er supply	OCR Scan	PDF	250mW 048-cycle 24/26-Pin 4C4M4B1
Untitled Abstract: No abstract text available Text: H ig h P e r f o r m a n c e 4M X 4 CM OS DRAM » H A S4C 4M 4E0 A S4L C 4M 4E 0 4 M X 4 CMOS EDO DRAM Advance information Features • O r g a n iz a t io n : 4 , 1 9 4 , 3 0 4 w o r d s x 4 b its JED EC s ta n d a r d p a c k a g e • H ig h s p e e d - 4 0 0 m il, 2 4 /2 6 - p i n SOJ	OCR Scan	PDF	1-30004-A. 1M16E0 l-30004-A.