3733
Abstract: imo 3 sd1090 2n5635 4l stud SD 1470 TQ-60 2N5016 2N5090
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type Package PIN SD # 2N 3866 2N 5090
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TQ-60
T0-60
15BAL
28/2x100
450SQ4LFL
3733
imo 3
sd1090
2n5635
4l stud
SD 1470
TQ-60
2N5016
2N5090
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power amplifier IC 4440
Abstract: BFR99 t 3866 transistor BFR99A CE-28 bf 225 vhf/SRF 3733 t 3866 power transistor tic 1060 BFR38
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS M0Ê @IlLi gîK(S R!10(gi RF & MICROWAVE TRANSISTORS TO-39 TO-60 .380 NARROW 4L STUD .500 4L STUD .380 4L STUD WIDEBAND VHF - UHF CLASS C FOR ECM AND RADIO LINKS APPLICATIONS Type PIN Package Config. (V) pout min
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TQ-60
T0-60
BSX33
2N956
power amplifier IC 4440
BFR99
t 3866 transistor
BFR99A
CE-28
bf 225
vhf/SRF 3733
t 3866 power transistor
tic 1060
BFR38
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marking Specific Device Code Date Code sot-23 4l
Abstract: transistor 3em
Text: MMBTH10L, MMBTH10-4L, SMMBTH10-4L, NSVMMBTH10L VHF/UHF Transistor NPN Silicon http://onsemi.com Features • S and NSV Prefixes for Automotive and Other Applications • Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
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MMBTH10L,
MMBTH10-4L,
SMMBTH10-4L,
NSVMMBTH10L
AEC-Q101
OT-23
O-236)
MMBTH10LT1/D
marking Specific Device Code Date Code sot-23 4l
transistor 3em
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upd6500
Abstract: F922 uPD65007 F981 IC tr f422 F661 CMOS GATE- NEC f422 f962 f791
Text: SEC CMOS-4L 1.5-M ICRON LOW-VOLTAGE CMOS GATE ARRAYS NEC Electronics Inc. February 1990 Description Figure 1. Sample CMOS-4L Packages NEC’s CMOS-4L family of 1.5-micron gate arrays are high-density, low-voltage application-specific integrated circuits ASICs that offer unique solutions for batterydriven circuits. Supply voltages ranging from 1.0 V to 5.5
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PDF
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2225-4L
Abstract: No abstract text available
Text: 2225-4L 3.5 Watts, 24 Volts, Class C Microwave 2200-2500 MHz GENERAL DESCRIPTION The 2225-4L is a COMMON BASE transistor capable of providing 3.5 Watts, Class C output power over the band 2200-2500 MHz. The transistor includes input prematching for full broadband capability. Gold metalization and
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2225-4L
2225-4L
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CB410
Abstract: stu 407 2804lSL CB-50 CB303 1090 TACAN CB-303 CB-408 SD1543-2
Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications DME/IFF/TACAN puisées, classe C TYPE PAC K AG E CONFIG. Vcc V SD 1528 .280 4L STUD (A) SD 1528-1 .280 4LSL (A) SD 1528-8 .250 2LFL HERM SD 1530 .280 4L STUD (A) SD 1530-1 .280 4LSL (A)
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52LFL
CB410
stu 407
2804lSL
CB-50
CB303
1090
TACAN
CB-303
CB-408
SD1543-2
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PDF
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2n6080
Abstract: SD 1062 transistor 2N3924 sd 3632
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V
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XO-72
O-117SL
O-117SL
2N6080
T0-60
SD 1062 transistor
2N3924
sd 3632
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PDF
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6lfl
Abstract: sd 1144 2N6080 7-02N sd1410 2N5643
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS GiflO Ml(LgmM § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022 VCC (V
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XO-72
O-117SL
O-117SL
2N6080
6lfl
sd 1144
7-02N
sd1410
2N5643
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Text: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1
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OCR Scan
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52N6082
MRF245
PT8828
BFY70
J0303
CM-501
sd1238
2N6096
RF Transistor S10-12
2N4932
BLY94
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BFR38
Abstract: BFR99 2N6080 2N956 BFX89 BSX33 9552N TO-117SL XO-72 pnp 2222a
Text: ^ 7 SGS-THOMSON TELECOM AND DATA COMMUNICATIONS G iflO M l(L g m M § RF & MICROWAVE TRANSISTORS TO 39 .380 4L STUD 130 . 230 MHz Type P/N SD SD SD SD SD .380 NARROW 4L STUD TO 60 Config. SD 1012 SD 1014-2 SD 1229-7 SD 1229-8 SD 1018 SD 1021 SD 1022
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XO-72
O-117SL
O-117SL
2N6080
BSX33
2N956
BFR38
BFR99
BFX89
9552N
TO-117SL
pnp 2222a
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PDF
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74LS247
Abstract: 74LS248 74LS249 7-seg ANODE COMMON 74LS47 gate diagram transistor 6B D143 74LS49 9374 d141
Text: FAIRCHILD INTERFACE DISPLAY DRIVERS 7.0 55 L Gas Discharge 80 D140 4L.7B, 9B 2 54/ 74145 1-of-10 OC Dvr TTL Yes No Yes 80 15 L Common Anode 215 D135 4L.7B 9B 3 54LS/ 74LS247 7-Seg Decoder/Dvr TTL Yes Yes No 12 15 L LED, Com Anode 4 54LS/ 74LS248 7-Seg Decoder/Dvr
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1-of-10
74LS247
74LS248
54LS/74LS47
54LS/74LS48
54LS/74LS49
54LS/74LS247
54LS/74LS248
54LS/74LS249
74LS249
7-seg ANODE COMMON
74LS47 gate diagram
transistor 6B
D143
74LS49
9374
d141
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PT9732
Abstract: TRANSISTOR W 59
Text: PT9732 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI PT9732 is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L FLG FEATURES: • PG = 12 dB min.
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PT9732
PT9732
TRANSISTOR W 59
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HF8-28S
Abstract: ASI10736
Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B
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HF8-28S
HF8-28S
112x45°
ASI10736
ASI10736
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HF100-28
Abstract: ASI10608
Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG
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HF100-28
HF100-28
112x45°
ASI10608
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Untitled
Abstract: No abstract text available
Text: HF100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF100-28 is a class A silicon NPN planar transistor, designed for SSB communications. Diffused ballasting provide High VSRW Capability under rated operating conditions. PACKAGE STYLE .500 4L FLG
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HF100-28
HF100-28
112x45Â
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SUTV040
Abstract: M122 SD4011
Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE POUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE
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SD4011
SUTV040
SD4011
SUTV040
M122
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arco TRIMMER capacitor
Abstract: arco 404 arco TRIMMER capacitor 425 arco 403 CPM13B capacitor 100uF 63V 3 pins trimmer capacitor TRIMMER capacitor 0.5 pF to 80pf TRIMMER capacitor 3 pin TRIMMER capacitor
Text: SD1459 RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS . . . . 170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS P OUT = 20 W MIN. WITH 7.5 dB GAIN .500 Dia .550 4L STUD M164
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SD1459
SD1459
arco TRIMMER capacitor
arco 404
arco TRIMMER capacitor 425
arco 403
CPM13B
capacitor 100uF 63V
3 pins trimmer capacitor
TRIMMER capacitor 0.5 pF to 80pf
TRIMMER capacitor
3 pin TRIMMER capacitor
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Untitled
Abstract: No abstract text available
Text: HF8-28S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF8-28S is a common Emitter transistor, designed for broadband amplifier operations in military, commercial and amateur communication equipment. PACKAGE STYLE .380 4L STUD .112x45° FEATURES: C B
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HF8-28S
HF8-28S
112x45Â
ASI10601
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150WpEP
Abstract: THX15C
Text: THX15C NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI THX15C is a Common Emitter Device Designed for High Linearity Class A/AB HF Applications. PACKAGE STYLE .550 4L STUD FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS
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THX15C
THX15C
150WpEP
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VHB10-28F
Abstract: transistor npn 1854 "RF Power Transistor" ASI10721 138175
Text: VHB10-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB10-28F is an NPN RF power transistor designed for 138-175 MHz VHF communications applications. It utilizes emitter ballasting to provide high VSWR handling capability. PACKAGE STYLE .380 4L FLG
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VHB10-28F
VHB10-28F
ASI10721
transistor npn 1854
"RF Power Transistor"
ASI10721
138175
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VHB25-28F
Abstract: ASI10724
Text: VHB25-28F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI VHB25-28F is an NPN power transistor, designed for 108-175 MHZ applications. The device utilizes diffused emitter resistor to achieve good VSWR capability. PACKAGE STYLE .380 4L FLG FEATURES: B
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VHB25-28F
VHB25-28F
ASI10724
ASI10724
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MRW54001
Abstract: lg system ic
Text: MRW54001 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI MRW54001 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. FEATURES: • Omnigold Metalization System • Implanted ballast resistors • Common-Emitter
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MRW54001
MRW54001
lg system ic
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PDF
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SUTV040
Abstract: airtronic M122 SD4011
Text: SD4011 RF & MICROWAVE TRANSISTORS UHF TV/LINEAR APPLICATIONS . . . . GOLD METALLIZATION INTERNAL INPUT MATCHING COMMON EMITTER OVERLAY GEOMETRY CLASS A OPERATION METAL/CERAMIC PACKAGE P OUT = 4 W MIN. WITH 8 dB GAIN .280 4L STUD M122 epoxy sealed ORDER CODE
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SD4011
SUTV040
SD4011
SUTV040
airtronic
M122
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PDF
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M122
Abstract: SD1449 TCC597
Text: SD1449 TCC597 RF & MICROWAVE TRANSISTORS UHF TV\LINEAR APPLICATIONS . . . 860 MHz 20 VOLTS COMMON EMITTER GOLD METALLIZATION CLASS A LINEAR OPERATION POUT = 1.0 W MIN. WITH 10.0 dB GAIN .280 4L STUD (M122) epoxy sealed ORDER CODE SD1449 BRANDING TCC597
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SD1449
TCC597)
TCC597
SD1449
M122
TCC597
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