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Text: MOTOROLA Order this document by MRW54001/D SEMICONDUCTOR TECHNICAL DATA MRW54001 . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRW54001/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistors MRW54001 MRW54601 . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers
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MRW54001
MRW54601
TW200)
MRW54001
MRW54001/D*
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MRW54001
Abstract: No abstract text available
Text: MOTOROLA Order this document by MRW54001/D SEMICONDUCTOR TECHNICAL DATA The RF Line Microwave Linear Power Transistors MRW54001 . . . designed primarily for large–signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common–Emitter Linear Power Amplifiers
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MRW54001
Abstract: lg system ic
Text: MRW54001 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE .200 4L PILL DESCRIPTION: The ASI MRW54001 is Designed for Classs "A" and "AB" Amplifier Applications Up to 2.0 GHz. FEATURES: • Omnigold Metalization System • Implanted ballast resistors • Common-Emitter
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lg system ic
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MC68B21CP
Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References
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SG379/D
1N965BRL
ZEN15V
1N751AS
1N967BRL
ZEN18V
1N751ASRL
1N968BRL
ZEN20V
MC68B21CP
xcm916x1cth16
transistor marking code 12W SOT-23
sg379
MC68B54P
XC68HC805P18CDW
mc68b50cp
MC2830
NE555N
CHN NE555N
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MHW707-2
Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar
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714U/1
MHLW8000
MHW707-2
MHW707-1
MRF947T1 equivalent
mhw704
CR2428
MHW591
MHW592
MHW593
MHW707
MRF861
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MLED96
Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B
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ATV5030
ATV5090B
ATV6031
ATV6060H
ATV7050
BAL99LT1
BAS16LT1
BAS21LT1
BAV70LT1
BAV74LT1
MLED96
BRX49 SCR
MRF549
ATV5030
MRF660
MRF548
mmbr2857lt1
CR2428
MPF3822
MRF548 MOTOROLA
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRW54001 MRW54601 The RF Line M icrowave Linear Power Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers
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MRW54001
MRW54601
MRW54601
MRW54001
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrowave Linear Power Transistors MRW54001 MRW54601 . . . designed prim arily for large-signal output and driver am plifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, C om m on-E m itler Linear Power Amplifiers
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MRW54001
MRW54601
MRW54601
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Motorola transistors MRF 947
Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that
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2PHX11136Q-17
Motorola transistors MRF 947
trimpots 3296
transistor C5386
1n4740
2N5591 Motorola
2N5688
CQ 542 Transistor npn motorola
equivalent transistor of 2sc3358
HB215/D
ic cd 2399 gp
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2N4427 equivalent bfr91
Abstract: bfr90 equivalent 2N5503 MRA1600-30 TPV-595A 2N3553 equivalent MRF477 equivalent MRA0500-19L 2N6084 equivalent MOTOROLA TRANSISTOR MRF239
Text: RF Power TMOS FETs Motorola RF Power MOSFETs, trademark TMOS , are constructed using a planar process to enhance manufacturing repeatability. They are N-channet field effect transistors with an oxide insulated gate which controls vertical current flow. Compared with bipolar transistors, RF Power FETs exhibit higher gain, higher input impedance, enhanced therm al stability
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PoweS3666
MRF3866
2N2857
2N3866
2N5943
MRF904
MRF571
2N4958
2N3160
2N5583
2N4427 equivalent bfr91
bfr90 equivalent
2N5503
MRA1600-30
TPV-595A
2N3553 equivalent
MRF477 equivalent
MRA0500-19L
2N6084 equivalent
MOTOROLA TRANSISTOR MRF239
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chw marking sot23
Abstract: sps 1951 transistor trimmer electron 3296 bw 9028 transistor smd marking BA rn ph 4148 zener diode
Text: Contents at a Glance VOLUME I Device Index Alphanumeric . . viii Chapter One Selector G u id e . 1.1-1 Chapter Two RF Monolithic Integrated C ircu
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MHW721A2
Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA
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1PHX11136Q-14
MHW721A2
13001 S 6D TRANSISTOR
atv5030* motorola
2N5591 MOTOROLA
13001 6D TRANSISTOR
BGY41
MHW710-1
construction linear amplifier 2sc1945
7119 amperex
bf503
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A5 GNE mosfet
Abstract: jo3501 2N4427 equivalent bfr91 2N503 2N5160 MOTOROLA BF431 BFR96 HY 1906 transistor jo2015 kd 2060 transistor
Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide ^ Amplifier Data Sheets Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions Cross Reference and Sales Offices 8 9 MOTOROLA
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1PHX11136Q-14
A5 GNE mosfet
jo3501
2N4427 equivalent bfr91
2N503
2N5160 MOTOROLA
BF431
BFR96
HY 1906 transistor
jo2015
kd 2060 transistor
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2.5 GHz RF power transistors with s-parameters
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers
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MRW54001
2.5 GHz RF power transistors with s-parameters
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42724
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line M icrow ave Linear Pow er Transistors . . . designed primarily for large-signal output and driver amplifier stages in the 1.0 to 4.0 GHz frequency range. • Designed for Class A or AB, Common-Emitter Linear Power Amplifiers
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MRW54001
42724
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RW54001
Abstract: Motorola 54101
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M RW 54001 Series The RF Line Microwave Linear Power Transistors 10 TO 11 dB 1-4 GHz 0.5 WATT MICROWAVE LINEAR POWER TRANSISTORS . . d e s ig n e d p r im a r ily fo r la rg e -s ig n a l o u tp u t a n d d r iv e r a m p lifie r s ta g e s in th e 1 to 4
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MRW54001
RW54001
Motorola 54101
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