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    4N060 Search Results

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    4N060 Price and Stock

    onsemi NTD24N06-001

    MOSFET N-CH 60V 24A IPAK
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    DigiKey NTD24N06-001 Tube 75
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    Rochester Electronics NTD24N06-001 146 1
    • 1 $0.1842
    • 10 $0.1842
    • 100 $0.1731
    • 1000 $0.1566
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    Nisshinbo Micro Devices R1524N060B-TR-FE

    IC REG LINEAR 6V 200MA SOT23-5
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    DigiKey R1524N060B-TR-FE Reel 3,000
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    Mouser Electronics R1524N060B-TR-FE 2,904
    • 1 $1.6
    • 10 $1.43
    • 100 $1.12
    • 1000 $0.636
    • 10000 $0.62
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    Nisshinbo Micro Devices R1524N060B-TR-YE

    IC REG LINEAR 6V 200MA SOT23-5
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    DigiKey R1524N060B-TR-YE Reel 3,000
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    Mouser Electronics R1524N060B-TR-YE
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    Nisshinbo Micro Devices R1154N060B-TR-FE

    IC REG LINEAR 6V 150MA SOT23-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1154N060B-TR-FE Reel 3,000
    • 1 -
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    • 10000 $0.2991
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    Mouser Electronics R1154N060B-TR-FE
    • 1 -
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    • 10000 $0.275
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    Rochester Electronics R1154N060B-TR-FE 6,000 1
    • 1 $0.375
    • 10 $0.375
    • 100 $0.3525
    • 1000 $0.3187
    • 10000 $0.3187
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    Nisshinbo Micro Devices R1524N060B-TR-KE

    IC REG LINEAR 6V 200MA SOT23-5
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey R1524N060B-TR-KE Reel 3,000
    • 1 -
    • 10 -
    • 100 -
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    • 10000 $1.12762
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    Mouser Electronics R1524N060B-TR-KE 64
    • 1 $2.45
    • 10 $2.2
    • 100 $1.77
    • 1000 $1.21
    • 10000 $1.08
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    4N060 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    4n0609

    Abstract: F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06
    Text: IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 9.2 mΩ ID 45 A Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature


    Original
    IPB45N06S4-09 IPI45N06S4-09, IPP45N06S4-09 PG-TO263-3-2 4N0609 IPI45N06S4-09 PG-TO262-3-1 4n0609 F45A IPB45N06S4-09 IPI45N06S4-09 IPP45N06S4-09 PG-TO263-3-2 4N06 PDF

    4N0604

    Abstract: IPD90N06S4-04 smd marking t 152a PG-TO252-3-11 J350-6
    Text: IPD90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 3.8 mΩ ID 90 A Features • N-channel - Enhancement mode PG-TO252-3-11 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original
    IPD90N06S4-04 PG-TO252-3-11 4N0604 4N0604 IPD90N06S4-04 smd marking t 152a PG-TO252-3-11 J350-6 PDF

    4N060

    Abstract: 4N06 4n0603 IPD100N06S4-03 D100A PG-TO252-3-11 J350-6 ipd100n
    Text: IPD100N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 3.5 mΩ ID 100 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original
    IPD100N06S4-03 PG-TO252-3-11 4N0603 4N060 4N06 4n0603 IPD100N06S4-03 D100A PG-TO252-3-11 J350-6 ipd100n PDF

    4n0603

    Abstract: 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2
    Text: IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.8 mΩ ID 120 A Features • N-channel - Enhancement mode PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 • AEC Q101 qualified • MSL1 up to 260°C peak reflow


    Original
    IPB120N06S4-03 IPI120N06S4-03, IPP120N06S4-03 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0603 IPI120N06S4-03 4n0603 4N06 4N060 IPB120N06S4-03 IPI120N06S4-03 IPP120N06S4-03 PG-TO263-3-2 PDF

    4N0605

    Abstract: IPD90N06S4-05 PG-TO252-3-11 IPD90N04S6-05
    Text: IPD90N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 5.1 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original
    IPD90N06S4-05 PG-TO252-3-11 IPD90N04S6-05 4N0605 4N0605 IPD90N06S4-05 PG-TO252-3-11 IPD90N04S6-05 PDF

    4n0602

    Abstract: 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2
    Text: IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 2.4 mΩ ID 120 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original
    IPB120N06S4-02 IPI120N06S4-02, IPP120N06S4-02 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0602 IPI120N06S4-02 4n0602 4N060 marking 206a IPB120N06S4-02 IPP120N06S4-02 SMD BR 32 IPI120N06S4-02 PG-TO263-3-2 PDF

    4N0604

    Abstract: 4N06 d90a smd marking t 152a IPB90N06S4-04 IPI90N06S4-04 IPP90N06S4-04 PG-TO263-3-2 diode smd marking T2
    Text: IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 3.7 mΩ ID 90 A Features PG-TO263-3-2 • N-channel - Enhancement mode PG-TO262-3-1 PG-TO220-3-1 • AEC qualified • MSL1 up to 260°C peak reflow


    Original
    IPB90N06S4-04 IPI90N06S4-04, IPP90N06S4-04 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0604 IPI90N06S4-04 4N0604 4N06 d90a smd marking t 152a IPB90N06S4-04 IPI90N06S4-04 IPP90N06S4-04 PG-TO263-3-2 diode smd marking T2 PDF

    4N0607

    Abstract: smd diode UM 07 DIODE smd marking 82a 4N06 DIODE smd marking Ag IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 PG-TO263-3-2
    Text: IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 7.1 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original
    IPB80N06S4-07 IPI80N06S4-07, IPP80N06S4-07 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0607 IPI80N06S4-07 4N0607 smd diode UM 07 DIODE smd marking 82a 4N06 DIODE smd marking Ag IPB80N06S4-07 IPI80N06S4-07 IPP80N06S4-07 PG-TO263-3-2 PDF

    4N0609

    Abstract: IPD50N06S4-09 IPD50N06S4-09 datasheet PG-TO252-3-11 TH-43
    Text: IPD50N06S4-09 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 9.0 mΩ ID 50 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original
    IPD50N06S4-09 PG-TO252-3-11 4N0609 4N0609 IPD50N06S4-09 IPD50N06S4-09 datasheet PG-TO252-3-11 TH-43 PDF

    IPD90N04S6-07

    Abstract: 4N0607 IPD90N06S4-07 PG-TO252-3-11
    Text: IPD90N06S4-07 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max 6.9 mΩ ID 90 A Features PG-TO252-3-11 • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant)


    Original
    IPD90N06S4-07 PG-TO252-3-11 IPD90N04S6-07 4N0607 45Anents IPD90N04S6-07 4N0607 IPD90N06S4-07 PG-TO252-3-11 PDF

    4N0605

    Abstract: smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06
    Text: IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 OptiMOS -T2 Power-Transistor Product Summary V DS 60 V R DS on ,max (SMD version) 5.4 mΩ ID 80 A Features • N-channel - Enhancement mode PG-TO263-3-2 • AEC Q101 qualified PG-TO262-3-1 PG-TO220-3-1 • MSL1 up to 260°C peak reflow


    Original
    IPB80N06S4-05 IPI80N06S4-05, IPP80N06S4-05 PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 4N0605 IPI80N06S4-05 4N0605 smd diode 106a 107 10V smd IPB80N06S4-05 IPI80N06S4-05 IPP80N06S4-05 PG-TO263-3-2 smd 106a smd diode marking DD 4N06 PDF