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    4N60R Search Results

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    4N60R Price and Stock

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    Rochester Electronics LLC IKD04N60RAATMA1

    IGBT TRENCH 600V 8A TO252-3
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    DigiKey IKD04N60RAATMA1 Bulk 1,681 476
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    Rochester Electronics LLC IKU04N60R

    IGBT TRENCH 600V 8A TO251-3
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    DigiKey IKU04N60R Bulk 1,500 670
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    Infineon Technologies AG IKD04N60R

    IGBT TRENCH 600V 8A TO252-3
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    DigiKey IKD04N60R Reel
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    Infineon Technologies AG IKD04N60RF

    IGBT TRENCH 600V 8A TO252-3
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    DigiKey IKD04N60RF Reel
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    Vishay Dale RWR84N60R4FMRSL

    RES 60.4 OHM 7W 1% WW AXIAL
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    DigiKey RWR84N60R4FMRSL Reel 100
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    4N60R Datasheets Context Search

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    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-R Preliminary Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 4N60-R is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high


    Original     		4N60-R 4N60-R O-220F1 QW-R502-A64 PDF

    4N60R

    Abstract: 4n60 4n60a IXTM4N60 IXTP4N60
    Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll S ■ IXTP4N60, IXTM4N60 □ IX Y S 4 A M P S , 6 0 0 V, 2.1S2/2.4Q M A X IM U M R A T IN G S _ I Parameter Sym. Drain-Source Voltage (1 Drain-Gate Voltage (RGS=1.Q MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient


    OCR Scan     		IXTP4N60, IXTM4N60 IXTP4N60 IXTM4N60 O-220 300jjs, 4N60R 4n60 4n60a PDF

    mosfet 4n60

    Abstract: 4n60a 4N60R IXTP4N60 IXTM4N60 4n60
    Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll 5 U □IXYS 1XTP4N60, IXTM4N60 4 AM PS, 600 V, 2.1S2/2.4Q MAXIMUM RATINGS _ I IXTP4N60 IXTM4N60 600 600 ±20 ±30 4 16 75 0.6 -6 5 to +150 300 (1.6mm from case for 10 sec. Sym. Parameter Drain-Source Voltage (1) Drain-Gate Voltage (RGS=1.Q MQ) (1)


    OCR Scan     		IXTP4N60, IXTM4N60 IXTP4N60 IXTM4N60 specifi420 O-204 O-220 O-247 mosfet 4n60 4n60a 4N60R 4n60 PDF