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4N65C Price and Stock

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Diodes Incorporated DMG4N65CT MOSFET N CH 650V 4A TO220-3
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DigiKey	DMG4N65CT	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Diodes Incorporated DMG4N65CTI MOSFET N-CH 650V 4A ITO220AB
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DigiKey	DMG4N65CTI	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Bristol Electronics	DMG4N65CTI		100		1	1 $6.72 10 $4.368 100 $2.9118 1000 $2.9118 10000 $2.9118	Buy Now
Cyg Wayon Circuit Protection Co Ltd WMF04N65C2 Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 4.6W; SOT223
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMF04N65C2		2,169		1	1 $0.476 10 $0.362 100 $0.294 1000 $0.25 10000 $0.238	Buy Now
Cyg Wayon Circuit Protection Co Ltd WMP04N65C2 Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMP04N65C2		598		1	1 $0.8 10 $0.3 100 $0.24 1000 $0.22 10000 $0.22	Buy Now
Cyg Wayon Circuit Protection Co Ltd WMP14N65C2 Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	WMP14N65C2		10		1	1 $0.86 10 $0.77 100 $0.62 1000 $0.57 10000 $0.57	Buy Now

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4N65C Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
DMG4N Abstract: 4N65CT 4n65 Text: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	PDF	DMG4N65CT O220-3 AEC-Q101 DS35719 DMG4N 4N65CT 4n65
4N65CT Abstract: No abstract text available Text: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS ADV AN CE I N FORM AT I O 650V 3.0 Features and Benefits RDS(ON) Package ID TC = 25°C @VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	PDF	DMG4N65CT O220-3 AEC-Q101 DS35719 4N65CT
4N65C Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-C Preliminary Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-C is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	4N65-C 4N65-C 4N65L-TF1-T QW-R502-B27 4N65C
Untitled Abstract: No abstract text available Text: 4N65CTI N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V ITO220-3 4.0 A • • • • • • Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	PDF	DMG4N65CTI ITO220-3 AEC-Q101 ITO220-AB DS36122
DMG4N65CT Abstract: No abstract text available Text: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features V BR DSS RDS(ON) Package 650V 3.0Ω@VGS = 10V TO220-3 • • • • • • ID TC = 25°C 4.0 A Description This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	PDF	DMG4N65CT O220-3 AEC-Q101 DS35719 DMG4N65CT
Untitled Abstract: No abstract text available Text: 4N65CT N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATIO Product Summary Features and Benefits V BR DSS RDS(ON) Package ID TC = 25°C 650V 3.0Ω@VGS = 10V TO220-3 4.0 A • • • • • • Mechanical Data Description and Applications This new generation complementary MOSFET features low onresistance and fast switching, making it ideal for high efficiency power	Original	PDF	DMG4N65CT O220-3 AEC-Q101 DS35719