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    500MHZ TRANSISTOR Search Results

    500MHZ TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    500MHZ TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    ic for driver get 14pin

    Abstract: EL5164 EL5165 EL5167 EL5462 EL5462IS
    Text: EL5462 Data Sheet February 14, 2005 500MHz Low Power Current Feedback Amplifier FN7492.0 Features • 500MHz -3dB bandwidth The EL5462 is a current feedback amplifier with a bandwidth of 500MHz which makes this amplifier ideal for today’s high speed video and monitor applications.


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    EL5462 500MHz FN7492 EL5462 14-pin ic for driver get 14pin EL5164 EL5165 EL5167 EL5462IS PDF

    Untitled

    Abstract: No abstract text available
    Text: EL5462 Data Sheet February 14, 2005 500MHz Low Power Current Feedback Amplifier FN7492.0 Features • 500MHz -3dB bandwidth The EL5462 is a current feedback amplifier with a bandwidth of 500MHz which makes this amplifier ideal for today’s high speed video and monitor applications.


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    EL5462 500MHz FN7492 EL5462 000V/Â 14-pin PDF

    MAX4112EUA

    Abstract: MAX4113 MAX4113ESA MAX4112 MAX4112ESA
    Text: 19-0443; Rev 0; 9/95 500MHz, Low-Power, Current-Mode Feedback Amplifiers _Applications Broadcast and High-Definition TV Systems _Features ♦ 500MHz -3dB Bandwidth MAX4112 275MHz -3dB Bandwidth (MAX4113)


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    500MHz, 500MHz MAX4112) 275MHz MAX4113) 30MHz 300MHz MAX4112EUA MAX4113 MAX4113ESA MAX4112 MAX4112ESA PDF

    34B DBM

    Abstract: carbon composition resistors Video Op Amps 300MHz MAX4112ESA MAX4112EUA MAX4117 MAX4118 op closed-loop
    Text: 19-0440; Rev 1; 8/96 KIT ATION EVALU BLE AVAILA Single/Dual, 500MHz, Low-Power, Current-Mode Feedback Amplifiers _Applications Broadcast and High-Definition TV Systems _Features ♦ 500MHz -3dB Bandwidth MAX4112/MAX4117


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    500MHz, 500MHz MAX4112/MAX4117) 275MHz MAX4113/MAX4118) 30MHz 300MHz 34B DBM carbon composition resistors Video Op Amps 300MHz MAX4112ESA MAX4112EUA MAX4117 MAX4118 op closed-loop PDF

    2sc2026

    Abstract: transistor 2sc2026 vhf high gain transistor high power npn UHF transistor 2sc2026 transistor data NPN rf transistor "rf transistor" RF POWER TRANSISTOR NPN
    Text: isc RF Product Specification INCHANGE Semiconductor isc Silicon NPN RF Transistor 2SC2026 DESCRIPTION •Low Noise NF= 3.0dB TYP. @ f= 500MHz ·High Power Gain Gpe= 15dB TYP. @ f= 500MHz ·High Gain Bandwidth Product fT= 2.0GHz TYP. APPLICATIONS ·Designed for use in low noise amplifiers in the VHF~UHF


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    2SC2026 500MHz 500MHz; 2sc2026 transistor 2sc2026 vhf high gain transistor high power npn UHF transistor 2sc2026 transistor data NPN rf transistor "rf transistor" RF POWER TRANSISTOR NPN PDF

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET ICS8427-02 ICS8427-02 500MHZ, LOWIntegrated JITTER LVCMOS/CRYSTAL-TOCircuit Systems, Inc. SYNTHESIZER LVHSTL FREQUENCY 500MHZ, LOW JITTER LVCMOS/CRYSTAL-TO-LVHSTL FREQUENCY SYNTHESIZER GENERAL DESCRIPTION FEATURES The ICS8427-02 is a general purpose, six


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    500MHZ, ICS8427-02 625MHz 500MHz. 200MHz 6667MHz 125kHz 199707558G PDF

    MITSUBISHI frequency counter ics

    Abstract: No abstract text available
    Text: MITSUBISHI ICs COMMUNICATION M64812GP Preliminary Notice;This is not a final specification. some parametric limits are subject to change. 2.0GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER DESCRIPTION The M64812GP is a 2.0GHz/500MHZ band twosystem one-chip PLL frequency synthesizer .


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    M64812GP 0GHz/500MHz M64812GP 500MHz, MITSUBISHI frequency counter ics PDF

    BF5Z

    Abstract: SBF-5089 hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89
    Text: SBF-5089 Z SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar


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    SBF-5089 500MHz, OT-89 EDS-103413 SBF5089" SBF5089Z" BF5Z hemt Ee marking ee hemt SBF 5089 SBF5089 SBF-5089Z SBF50 sbf5089z marking code 827 sot89 PDF

    M64811AGP

    Abstract: TCXO 19.2MHZ MITSUBISHI frequency counter ics
    Text: MITSUBISHI ICs COMMUNICATION M64811AGP 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M64811AGP is a 1.1GHz/500MHz band two-system one-chip PLL frequency synthesizer . Using a high performance Bi-CMOS process , the product


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    M64811AGP 1GHz/500MHz M64811AGP 500MHz TCXO 19.2MHZ MITSUBISHI frequency counter ics PDF

    NTE23

    Abstract: No abstract text available
    Text: NTE23 Silicon NPN Transistor Ultra High Frequency Amp Description: The NTE23 is suitable for a low noise amplifier in the VHF to UHF band. Features: D Low Noise Figure: NF 3.0dB Typ. @ f = 500MHz D High Power Gain: Gpe 15dB Typ. @ f = 500MHz D High Cutoff Frequency: fT = 2.0GHz Typ


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    NTE23 NTE23 500MHz PDF

    Untitled

    Abstract: No abstract text available
    Text: £/ ne. ,O I TELEPHONE: 973 376-2922 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. (212)227-6005 FAX: (973) 376-8960 MMBR920L Silicon NPN RF Transistor DESCRIPTION • Low Noise NF= 2.4dB TYP. @ f= 500MHz • High Gain SOT- 2 3 package I Gpe= 15dB TYP. @ f= 500MHz


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    MMBR920L 500MHz PDF

    EL5162

    Abstract: EL5163 EL5164 EL5167 EL5262 EL5263 EL5362 FN7388 F 5 Ld SOT-23 MDP0038
    Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet March 16, 2007 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed


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    EL5162, EL5163, EL5262, EL5263, EL5362 500MHz EL5162 EL5163 EL5164 EL5167 EL5262 EL5263 EL5362 FN7388 F 5 Ld SOT-23 MDP0038 PDF

    FN7388

    Abstract: EL5163IWZ-T7A EL5362IUZ-T7 so8 150 MIL EL5162 EL5163 EL5164 EL5167 EL5262 EL5263
    Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet January 4, 2008 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed


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    EL5162, EL5163, EL5262, EL5263, EL5362 500MHz FN7388 EL5163IWZ-T7A EL5362IUZ-T7 so8 150 MIL EL5162 EL5163 EL5164 EL5167 EL5262 EL5263 PDF

    hemt Ee

    Abstract: InP HBT transistor low noise SBF-4089 SBF-4089Z RF POWER TRANSISTOR 70mhz
    Text: SBF-4089 Z SBF-4089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF-4089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar


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    SBF-4089 500MHz, OT-89 EDS-103412 SBF4089" SBF-4089Z" hemt Ee InP HBT transistor low noise SBF-4089Z RF POWER TRANSISTOR 70mhz PDF

    Untitled

    Abstract: No abstract text available
    Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal


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    SBF5089Z SBF5089ZDC 500MHz, OT-89 SBF5089Z DS111011 SBF5089ZSQ SBF5089ZSR PDF

    HBT transistor

    Abstract: SBF4089ZPCK1
    Text: SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal


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    SBF4089ZDC 500MHz, SBF4089Z OT-89 SBF4089Z operati40 DS111011 HBT transistor SBF4089ZPCK1 PDF

    Untitled

    Abstract: No abstract text available
    Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet January 4, 2008 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed


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    EL5162, EL5163, EL5262, EL5263, EL5362 500MHz PDF

    BDA SOT23-5

    Abstract: FN7388 EL5164 EL5167 EL5262 EL5263 EL5362 EL5162 EL5163 INTERSIL marking 5 sot
    Text: EL5162, EL5163, EL5262, EL5263, EL5362 Data Sheet May 7, 2007 500MHz Low Power Current Feedback Amplifiers with Enable The EL5162, EL5163, EL5262, EL5263, and EL5362 are current feedback amplifiers with a bandwidth of 500MHz. This makes these amplifiers ideal for today’s high speed


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    EL5162, EL5163, EL5262, EL5263, EL5362 500MHz BDA SOT23-5 FN7388 EL5164 EL5167 EL5262 EL5263 EL5362 EL5162 EL5163 INTERSIL marking 5 sot PDF

    Untitled

    Abstract: No abstract text available
    Text: SBF4089Z SBF4089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF4089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal


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    SBF4089Z SBF4089ZDC 500MHz, OT-89 SBF4089Z DS111011 SBF4089ZSQ PDF

    SBF-5089Z

    Abstract: InP transistor HEMT InP HBT transistor low noise
    Text: SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD’s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5GHz with excellent thermal


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    SBF5089ZDC 500MHz, SBF5089Z OT-89 SBF5089Z DS111011 SBF5089ZSQ SBF-5089Z InP transistor HEMT InP HBT transistor low noise PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI ICs COMMUNICATION M64811AGP 1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE DESCRIPTION PIN CONFIGURATION (TOP VIEW) The M64811AGP is a 1.1GHz/500MHz band two-system one-chip PLL frequency synthesizer. Using a high performance Bi-CMOS process, the product


    OCR Scan
    M64811AGP 1GHz/500MHz M64811AGP 500MHz GGSS37Ã M5M4V4160J 4194304-BIT 262144-WORD 16-BIT) PDF

    le2m

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR RF TRANSISTOR IS S U E 2 - M A R C H 94 FEATURES * * High fT, 1.3GHz Low noise < 5dB at 500MHz * Power output at 500MHz >175mW ABSOLUTE M A XIM U M RATINGS. PARAM ETER SYM BO L Collector-Base Voltage V CBO Collector-Emitter Voltage VALU E


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    500MHz 175mW 0Q1Q354 001G35S le2m PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ FEATURES DC to >500MHz Operation Differential ±1V Full Scale Inputs Differential ±4mA Full Scale Output Current Low Distortion {<0.05% for OdBm Input Supply Voltages from ±4V to ±9V Low Power 280mW typical at VS= ± 5V ) 500MHz Four-Quadrant Multiplier


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    500MHz 280mW AD834 PDF

    Untitled

    Abstract: No abstract text available
    Text: ANALOG DEVICES □ FEATURES DC to >500MHz Operation Differential ±1V Full Scale Inputs Differential ±4mA Full Scale Output Current Low Distortion <0.05% for OdBm Input Supply Voltages from ±4V to ±9V Low Power (280mW typical at VS= ±5V ) 500MHz Four-Quadrant Multiplier


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    500MHz 280mW AD834 AD834 AD840 PDF