IRHM8450
Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Text: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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0673A
IRHM7450
IRHM8450
JANSR2N7270
JANSH2N7270
500Volt,
1x106
IRHM8450
2N7270
IRHM7450
JANSH2N7270
JANSR2N7270
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IRH7450
Abstract: IRH8450
Text: PD - 91807A IRH7450 IRH8450 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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1807A
IRH7450
IRH8450
500Volt,
1x106
IRH7450
IRH8450
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IRHF7430SE
Abstract: No abstract text available
Text: PD - 91863A IRHF7430SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 500Volt, 1.6Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. No compensation of gate drive circuitry is required because pre and post-irradiation electrical
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1863A
IRHF7430SE
500Volt,
IRHF7430SE
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IRHN7450SE
Abstract: No abstract text available
Text: PD - 91313B IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation
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91313B
IRHN7450SE
500Volt,
Rectifi10)
IRHN7450SE
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transistor gt 322
Abstract: No abstract text available
Text: PD - 91863 IRHF7430SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , SEE RAD HARD HEXFET 500Volt, 1.92Ω International Rectifier’s SEE RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation
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IRHF7430SE
500Volt,
transistor gt 322
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IRHM7460SE
Abstract: No abstract text available
Text: PD - 91394D IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-radiation test
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91394D
IRHM7460SE
500Volt,
IRHM7460SE
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IRHM7450SE
Abstract: aval
Text: PD - 91223C IRHM7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation
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91223C
IRHM7450SE
500Volt,
Rectifi10)
IRHM7450SE
aval
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"MOSFET Module"
Abstract: "dual MOSFET Module" mosfet 500 watt welding power FK20SM-10 QJD0512001 welding mosfet
Text: QJD0512001 Preliminary Dual MOSFET Module 120Amp/500Volts Powerex, Inc., 200 Hillis St., Youngwood 15697 724 925-7272 Description: Powerex Dual MosFet Module features low 60 mΩ rds(on) is specially designed for customer applications. The modules are isolated for easy mounting with other
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QJD0512001
120Amp/500Volts
FK20SM-10
-600A/
"MOSFET Module"
"dual MOSFET Module"
mosfet 500 watt
welding power
QJD0512001
welding mosfet
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IRH7450SE
Abstract: No abstract text available
Text: PD - 91390A IRH7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation
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1390A
IRH7450SE
500Volt,
Rectifie10)
IRH7450SE
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Untitled
Abstract: No abstract text available
Text: PD - 91807A IRH7450 IRH8450 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability and breakdown voltage stability at total
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1807A
IRH7450
IRH8450
500Volt,
1x106
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IRHN7450
Abstract: IRHN8450 JANSH2N7270U JANSR2N7270U 2N7270U
Text: PD - 90819A IRHN7450 IRHN8450 JANSR2N7270U JANSH2N7270U REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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0819A
IRHN7450
IRHN8450
JANSR2N7270U
JANSH2N7270U
500Volt,
1x106
IRHN7450
IRHN8450
JANSH2N7270U
JANSR2N7270U
2N7270U
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diode.18
Abstract: IRHM7460SE
Text: Provisional Data Sheet No. PD - 9.1394C IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω, (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate virtual immunity to SEE failure. Additionally, under identical pre- and post-radiation test conditions, International Rectifier’s RAD HARD
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1394C
IRHM7460SE
500Volt,
diode.18
IRHM7460SE
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8a 905 surface mount transistor
Abstract: IRHNB7460SE n-Channel mosfet 400v
Text: PD - 91741 REPETITIVE AVALANCHE AND dv/dt RATED IRHNB7460SE HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.32Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure.
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IRHNB7460SE
500Volt,
8a 905 surface mount transistor
IRHNB7460SE
n-Channel mosfet 400v
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IRF 725
Abstract: 2N6802U IRFE430 JANTX2N6802U JANTXV2N6802U rectifier diode for max 250v 1.5A
Text: Provisional Data Sheet No. PD - 9.1719 IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:MIL-PRF-19500/557] N-CHANNEL Ω , HEXFET 500Volt, 1.50Ω The leadless chip carrier LCC package represents the logical next step in the continual evolution of
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IRFE430
JANTX2N6802U
JANTXV2N6802U
MIL-PRF-19500/557]
500Volt,
IRF 725
2N6802U
IRFE430
JANTX2N6802U
JANTXV2N6802U
rectifier diode for max 250v 1.5A
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ISAOHM
Abstract: 200G
Text: FEATURES SPECIFICATIONS • WHM, UltraHigh ohmic value precision series, • WNM, Aryton Perry winding NonInductive available. Inductance <1nH at 1MHZ test, • Designed to meet the most stringent MIL-R-26F, MIL-STD-202 standard requirements • Miniaturized Better power to
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MIL-R-26F,
MIL-STD-202
WHA330FE
WHA470FE
WHA560FE
WNA250FE
WHB250FE
WHB330FE
WHB470FE
WHB560FE
ISAOHM
200G
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PL259
Abstract: No abstract text available
Text: The l-arsen [;lIl:/Mini-ljIlF connectors are popular and economical, used in caseswhere impedance mating is not required. General purpose units designed to operate satisfactorily up to 500 MHz. They have a peak voltage rating of 500Volts. E L E C T R I C A L S P E C I F I C A T I O N S UHF S ER I ES
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500Volts.
259/UTeflon
UG175
PL259
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1394C International IO R Rectifier IRHM7460SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0.32Q, (SEE) RAD HARD HEXFET
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1394C
IRHM7460SE
500Volt,
ionizati11
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1719 International IOR Rectifier IRFE430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6802U HEXFET TRANSISTOR JANTXV2N6802U [REF:M IL-PRF-19500/557] N -C H A N N E L Product Summary 500Volt, 1.50Q, HEXFET The leadless chip carrier LCC package represents
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IRFE430
JANTX2N6802U
JANTXV2N6802U
MIL-PRF-19500/557]
500Volt,
46SS452
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Untitled
Abstract: No abstract text available
Text: PD -91863A International I« R Rectifier IRHF7430SE R E P E T IT IV E A V A L A N C H E A N D d v /d t R A T E D HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 1.6£2, SEE RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technol
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-91863A
IRHF7430SE
500Volt,
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD 9.1291 B International I R Rectifier HEXFET PO W E R M O S F E T IRFY430CM N -C H A N N E L Product Summary 500Volt, 1.5£2 HEXFET HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The effi
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IRFY430CM
500Volt,
S5452
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Untitled
Abstract: No abstract text available
Text: P D - 91741 International I R Rectifier dv/dt HEXFET TRANSISTOR R EPETITIVE AVALANCHE AND RATED IRHNB7460SE N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0.32Q, (SEE) RAD HARD HEXFET Product Summary International R e ctifie r’s (SEE) RAD H AR D te c h n o l
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IRHNB7460SE
500Volt,
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD - 9.1394C International I R Rectifier IRHM7460SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL S IN G L E E V E N T E F F E C T S E E R A D H A R D 500Volt, 0 .3 2 a (SEE) RAD HARD HEXFET International Rectifier's (SEE) RAD HARD technology
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1394C
IRHM7460SE
500Volt,
G02T4b4
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IC 555 timer low volt
Abstract: Si9910
Text: ^ ^ ^ T in c o r p n r a t e d SÌ9910 Adaptive Power MOSFET Driver1 FEATURES dv/dt and d i/d t Control Undervoltage Protection Short-circuit Protection • tn- Shoot-through Current Limiting • Low Quiescent Current • Com patible with W id e Range of MOSFET Devices
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Si9910
IC 555 timer low volt
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pliotron fp
Abstract: pliotron
Text: FP-62 D E S C R IP T IO N A N D R A T IN G E T U I 61 PAGE 1 4-45 PLIOTRON D ESCRIPTIO N T he FP-62 ionization gage em bodies several unique design features which m ake this tu b e an efficient and reliable device for the m easurem ent of gas pressures. Stem leakage is entirely elim inated by m ounting
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FP-62
ETI-161
FP-62
K-4903555
pliotron fp
pliotron
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