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    50A 30V 8.5M MOSFET Search Results

    50A 30V 8.5M MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    HAT2270H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 3.4Mohm Lfpak Visit Renesas Electronics Corporation
    HAT2099H-EL-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 3.7Mohm Lfpak Visit Renesas Electronics Corporation
    RJK0391DPA-00#J53 Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 2.9Mohm Wpak Visit Renesas Electronics Corporation
    2SK2959-E Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 10Mohm To-220Ab Visit Renesas Electronics Corporation
    RJK03M1DPA-00#J5A Renesas Electronics Corporation Nch Single Power Mosfet 30V 50A 2.3Mohm Wpak Visit Renesas Electronics Corporation

    50A 30V 8.5M MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MDD1653

    Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
    Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state


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    MDD1653 MDD1653 MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R PDF

    mdd1653

    Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
    Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


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    MDD1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP PDF

    AP-08

    Abstract: AP0803GMT-A-HF 50a 30v 8.5m MOSFET
    Text: AP0803GMT-A-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Low On-resistance 30V RDS ON 8.5mΩ ID G ▼ RoHS Compliant & Halogen-Free BVDSS 50A S D Description


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    AP0803GMT-A-HF 100us 100ms AP-08 AP0803GMT-A-HF 50a 30v 8.5m MOSFET PDF

    A102

    Abstract: APM3007N APM3007NU STD-020C
    Text: APM3007NU N-Channel Enhancement Mode MOSFET Features • Pin Description 30V/50A, RDS ON =5.5mΩ (typ.) @ VGS=10V RDS(ON)=8.5mΩ (typ.) @ VGS=4.5V • • • G Super High Dense Cell Design D S Reliable and Rugged Top View of TO-252 Lead Free Available (RoHS Compliant)


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    APM3007NU 0V/50A, O-252 APM3007N APM3007N Date-252 A102 APM3007NU STD-020C PDF

    TSM35N03

    Abstract: TSM35N03CP 50a 30v 8.5m MOSFET
    Text: TSM35N03 Preliminary N-Channel Enhancement Mode MOSFET VDS = 30V ID = 50A RDS on , Vgs @ 10V, Ids @ 30A = 8.5mΩ RDS (on), Vgs @ 4.5V, Ids @ 30A = 13mΩ Pin assignment: 1. Gate 2. Drain 3. Source Features — — — High Density Cell Design for Ultra Low On-Resistance —


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    TSM35N03 TSM35N03CP O-252 300uS, O-252 TSM35N03 TSM35N03CP 50a 30v 8.5m MOSFET PDF

    0803GMT

    Abstract: No abstract text available
    Text: AP0803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Simple Drive Requirement D BVDSS 30V RDS ON SO-8 Compatible Low On-resistance ID G RoHS Compliant 8.5m 50A S D Description D D D Advanced Power MOSFETs from APEC provide the


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    AP0803GMT-HF 0803GMT 0803GMT PDF

    0803GMT

    Abstract: AP0803GMT-HF 12-HK
    Text: AP0803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Low On-resistance 30V RDS ON 8.5mΩ ID G ▼ RoHS Compliant BVDSS 50A S D Description Advanced Power MOSFETs from APEC provide the


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    AP0803GMT-HF 0803GMT 0803GMT AP0803GMT-HF 12-HK PDF

    Untitled

    Abstract: No abstract text available
    Text: AP0803GMT-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ SO-8 Compatible ▼ Low On-resistance 30V RDS ON 8.5mΩ ID G ▼ RoHS Compliant BVDSS 50A S D Description Advanced Power MOSFETs from APEC provide the


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    AP0803GMT-HF 100us 100ms PDF

    0803GMT

    Abstract: AP0803
    Text: Advanced Power Electronics Corp. AP0803GMT-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D BV DSS SO-8 Compatible with Heatsink 30V R DS ON Low On-resistance G 8.5mΩ ID RoHS-compliant, halogen-free 50A S D Description D D D Advanced Power MOSFETs from APEC provide the designer with


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    AP0803GMT-HF-3 AP0803 0803GMT 0803GMT AP0803 PDF

    FDD8447L

    Abstract: 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK
    Text: FDD8447L 40V N-Channel PowerTrench MOSFET 40V, 50A, 8.5m: Features General Description „ Max rDS on = 8.5m: at VGS = 10V, ID = 14A This N-Channel MOSFET has been produced using Fairchild Semiconductor’s proprietary PowerTrench® technology to deliver low rDS(on) and optimized BVDSS capability to offer


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    FDD8447L 50a 30v 8.5m MOSFET fdd8447 fdd*8447l 40V 14A DPAK PDF

    MT1115

    Abstract: 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117
    Text: Fairchild Semiconductor T ransistor and Diode Data Catalog 1970 The Fairchild Semiconductor Transistor anc Diode Data Catalog is an all-inclusive volume of product information covering diodes anc transistors. Selection guides and data sheets fot each category of products assist you ir


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    108th MT1115 2N3303 FPT100 phototransistor UA739 equivalent transistor bc 554 pnp mt1039 ft2974 fairchild 2N3565 FD6666 diode transistor npn Epitaxial Silicon SST 117 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Text: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


    OCR Scan
    AN-134 transistor c2060 Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor PDF