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    MDD165 Search Results

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    mdd1655

    Abstract: MDD165 MDD1655T 0342F
    Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


    Original     		MDD1655 MDD1655 MDD165 MDD1655T 0342F PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 50A, 6.5mΩ General Description Features The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.


    Original     		MDD1654 MDD1654 PDF

    MOSFET 719

    Abstract: mdd1655 MDD165
    Text: 30V N-channel Trench MOSFET : 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load Switching and


    Original     		MDD1655 MDD1655 MOSFET 719 MDD165 PDF

    mdd1655

    Abstract: No abstract text available
    Text: Single N-channel Trench MOSFET 30V, 25A, 15mΩ General Description Features The MDD1655 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1655 is suitable device for PWM, Load


    Original     		MDD1655 100oC MDD1655 PDF

    MDD1654

    Abstract: mdd1654 MOSFET MDD*1654 MagnaChip Semiconductor Ltd. MDD1654 MDD1654R 30V 20A power p MOSFET MDD165 MagnaChip Semiconductor
    Text: 30V N-channel Trench MOSFET : 30V, 55A, 6.0mΩ Features General Description The MDD1654 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load Switching and


    Original     		MDD1654 MDD1654 mdd1654 MOSFET MDD*1654 MagnaChip Semiconductor Ltd. MDD1654 MDD1654R 30V 20A power p MOSFET MDD165 MagnaChip Semiconductor PDF

    MDD1654

    Abstract: MDD*1654 mdd1654 MOSFET MagnaChip Semiconductor Ltd. MDD1654 MDD1654RH MDD165 30V 20A power p MOSFET TO 252 dimensions
    Text: Single N-channel Trench MOSFET 30V, 55A, 6.0mΩ General Description Features The MDD1654 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD1654 is suitable device for PWM, Load


    Original     		MDD1654 MDD1654 MDD*1654 mdd1654 MOSFET MagnaChip Semiconductor Ltd. MDD1654 MDD1654RH MDD165 30V 20A power p MOSFET TO 252 dimensions PDF

    MDD1653

    Abstract: MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R
    Text: Single N-channel Trench MOSFET 30V, 50A, 8.5mΩ General Description Features VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced MagnaChip’s MOSFET Technology, which provides high performance in on-state


    Original     		MDD1653 MDD1653 MDD*1653 mdd1653 MOSFET MDD1653rh MDD1653RP MagnaChip Semiconductor Ltd. MDD1653 MagnaChip Semiconductor Ltd. MDD1653 rg 1E52 MDD165 MDD1653R PDF

    mdd1653

    Abstract: mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP
    Text: 30V N-channel Trench MOSFET : 30V, 50A, 8.5mΩ Features General Description VDS = 30V ID = 50A @VGS = 10V RDS ON < 8.5mΩ @VGS = 10V < 14.0mΩ @VGS = 4.5V The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching


    Original     		MDD1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 MDD*1653 50a 30v 8.5m MOSFET MDD1653R 30V 20A power p MOSFET MagnaChip Semiconductor Ltd. MDD1653 rg MDD1653T MAGNACHIP PDF

    MDS1653

    Abstract: MDD*1653 MDD1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 mdS1653 MOSFET MDD1653R MDD165 MDD1653T 190NC
    Text: Preliminary – Subject to change without notice 30V N-Channel Trench MOSFET 30V, 55A, 8.5mΩ General Description Features The MDD1653 uses advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent reliability.


    Original     		MDD1653 MDS1653 MDD1653 MDD*1653 mdd1653 MOSFET MagnaChip Semiconductor Ltd. MDD1653 mdS1653 MOSFET MDD1653R MDD165 MDD1653T 190NC PDF

    Untitled

    Abstract: No abstract text available
    Text: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _POW ER_ _ _ _BE OCRS no \P J » I B THREE-PHASE I „ N=4 0 -1 2 0 A RECJTIEIER S.A. ROTATING / SILIC O N T C= 8 5°C REC TIFIER


    OCR Scan     		MDD76N M5D76N fCD76N MDD86N PDF

    MDD 42-12-N1

    Abstract: MDD 25-08 n1 mdd 42 mdd 90-04 DIODE REDRESSEMENT 12nl MDD165 mdd 42-08 ASEA abb diode MDD 65
    Text: A S E A BROüJN/ABB A3 SENICOR Netz-Dioden-Module D I 004030a 00001ÖS T | Diode Modules for mains frequency D aten pro D io d e / d a ta p er d io d e /fe s ca ra cté ristiq u e s s e rap porten t à 1 d iod e V rhm If r m s 10 ms 8,3 m s Typ/type V A A


    OCR Scan     		100-C K21-0265 K21-0120 K21-0180 K21-0120' MDD 42-12-N1 MDD 25-08 n1 mdd 42 mdd 90-04 DIODE REDRESSEMENT 12nl MDD165 mdd 42-08 ASEA abb diode MDD 65 PDF