pa3017
Abstract: 8ohm 1W speaker
Text: UNISONIC TECHNOLOGIES CO., LTD PA3017 CMOS IC 2W STEREO AUDIO AMPLIFIER DESCRIPTION As a stereo audio speaker which is operating on a single 5V supply, the UTC PA3017 is capable of delivering 2W of output power per channel into 3Ω loads with less than 1% THD+N. Way of
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PA3017
PA3017
PA3017L
QW-R502-184
8ohm 1W speaker
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K411
Abstract: LDTB113ELT1G
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTB113ELT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTB113ELT1G
OT-23
K411
LDTB113ELT1G
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LDTD113ZET1G
Abstract: SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD113ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTD113ZET1G
SC-89
100m200m
50m100m200m
463C-01
463C-02.
LDTD113ZET1G
SC-89
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DTB114ES
Abstract: B114E DTB114EK SC-72 T146
Text: DTB114EK / DTB114ES Transistors -500mA / -50V Digital transistors with built-in resistors DTB114EK / DTB114ES zExternal dimensions (Unit : mm) DTB114EK 2.9 1.1 0.4 1.6 2.8 (3) (2) (1) 0.95 0.95 0.15 ROHM : SMT3 EIAJ : SC-59 1.9 (1) GND (2) IN (3) OUT Each lead has same dimensions
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DTB114EK
DTB114ES
-500mA
DTB114EK
SC-59
15Min.
DTB114ES
B114E
SC-72
T146
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Untitled
Abstract: No abstract text available
Text: LM49153 www.ti.com SNAS496B – JANUARY 2011 – REVISED APRIL 2011 LM49153 Boomer Mono Audio Subsystem with Class G Headphone Amplifier, Class D Speaker Amplifier, Noise Gate and Speaker Protection Check for Samples: LM49153 FEATURES DESCRIPTION • The LM49153 is a fully integrated audio subsystem
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LM49153
SNAS496B
LM49153
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Untitled
Abstract: No abstract text available
Text: LM49153 www.ti.com SNAS496B – JANUARY 2011 – REVISED APRIL 2011 LM49153 Boomer Mono Audio Subsystem with Class G Headphone Amplifier, Class D Speaker Amplifier, Noise Gate and Speaker Protection Check for Samples: LM49153 FEATURES DESCRIPTION • The LM49153 is a fully integrated audio subsystem
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LM49153
SNAS496B
LM49153
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GI115
Abstract: SC-75A
Text: Low VCE sat Digital transistors (with built-in resistors) DTD543EE / DTD543EM zDimensions (Unit : mm) zApplications Inverter, Interface, Driver DTD543EE 0.7 1.6 0.55 0.3 zStructure NPN digital transistor (Built-in resistor type) (2) 1.6 0.8 (3) 0.2 0.15
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DTD543EE
DTD543EM
DTD543EE
SC-75A)
OT-416>
R0039A
GI115
SC-75A
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Untitled
Abstract: No abstract text available
Text: UNISONICTECHNOLOGIESCO., LTD PA3017 CMOS IC 2 W ST EREO AU DI O AM PLI FI ER ̈ DESCRI PT I ON As a stereo audio speaker which is operating on a single 5V supply, the UTC PA3017 is capable of delivering 2W of output power per channel into 3 loads with less than 1% THD+N. Way of
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PA3017
PA3017
QW-R502-224
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LDTB114EET1G
Abstract: SC-89
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • • LDTB114EET1G Applications Inverter, Interface, Driver 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB114EET1G
-500m
-200m
-100m
-200m
LDTB114EET1G
SC-89
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LDTB113ZWT1G
Abstract: k8 marking transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTB113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTB113ZWT1G
LDTB113ZWT1G
k8 marking transistor
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LDTB113ZET1G
Abstract: SC-89 k8 marking transistor
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTB113ZET1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB113ZET1G
SC-89
-200m
-100m
-50m-100m-200m
-500m
LDTB113ZET1G
SC-89
k8 marking transistor
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTD113ZWT1G Applications Inverter, Interface, Driver 3 • Features 1 Built-in bias resistors enable the configuration of an
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LDTD113ZWT1G
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LDTB113ZLT1G
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network • LDTB113ZLT1G Applications Inverter, Interface, Driver • 3 Features 1 Built-in bias resistors enable the configuration of an
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LDTB113ZLT1G
OT-23
LDTB113ZLT1G
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Untitled
Abstract: No abstract text available
Text: LM49153 www.ti.com SNAS496B – JANUARY 2011 – REVISED APRIL 2011 LM49153 Boomer Mono Audio Subsystem with Class G Headphone Amplifier, Class D Speaker Amplifier, Noise Gate and Speaker Protection Check for Samples: LM49153 FEATURES DESCRIPTION • The LM49153 is a fully integrated audio subsystem
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LM49153
SNAS496B
LM49153
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DTB113ZK
Abstract: T146
Text: -500mA / -50V Digital transistors with built-in resistors DTB113ZK z Applications Inverter, Interface, Driver z Dimensions (Unit : mm) 2.9 DTB113ZK z Feature 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input
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-500mA
DTB113ZK
SC-59
R0039A
DTB113ZK
T146
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DTB114EK
Abstract: DTB114ES T146
Text: -500mA / -50V Digital transistors with built-in resistors DTB114EK Dimensions (Unit : mm) DTB114EK 2.9 1.1 0.4 Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit).
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-500mA
DTB114EK
SC-59
R0039A
DTB114EK
DTB114ES
T146
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Untitled
Abstract: No abstract text available
Text: LM49153 www.ti.com SNAS496B – JANUARY 2011 – REVISED APRIL 2011 LM49153 Boomer Mono Audio Subsystem with Class G Headphone Amplifier, Class D Speaker Amplifier, Noise Gate and Speaker Protection Check for Samples: LM49153 FEATURES DESCRIPTION • The LM49153 is a fully integrated audio subsystem
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LM49153
SNAS496B
LM49153
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Untitled
Abstract: No abstract text available
Text: DTB114EK / DTB114ES Transistors Digital transistors built-in resistors DTB114EK / DTB114ES zExternal dimensions (Unit : mm) 2.9 + − 0.2 DTB114EK 1.1+0.2 −0.1 1.9 + − 0.2 0.8 + − 0.1 0.95 0.95 1.6+0.2 −0.1 2.8 + − 0.2 (2) (1) 0~0.1 0.4 +0.1 −0.05
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DTB114EK
DTB114ES
DTB114EK
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all mosfet equivalent book
Abstract: transistor equivalent book bc 149 mosfet catalogue 2SK2731 T146 free transistor equivalent book
Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F eatu re s 1 ) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E xte rn a l dimensions (Units: mm) 2.9±0.2
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200mA)
2SK2731
SC-59
all mosfet equivalent book
transistor equivalent book bc 149
mosfet catalogue
2SK2731
T146
free transistor equivalent book
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors D T B 1 2 3 Y K /D T B 1 2 3 Y C /D T B 1 2 3 Y S •F eatu re s 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (se e th e equivalent cir
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DTB123YK
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Untitled
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTB113ZK/DTB113ZS •F e a tu re s ►External dimensions (Units: mm) 1 ) Built-in bias resistors enable the configuration of an inverter circuit 2 .9 + 0 .2 DTB113ZK + 0.1 1 1 0-2 — without connecting external input
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DTB113ZK/DTB113ZS
DTB113ZK
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
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BL-5j
Abstract: No abstract text available
Text: Transistors Interface and switching 30V, 200mA 2SK2731 •F e a tu re s 1) Low on-resistance. 2) High-speed switching. 3) Low-voltage drive (4V). 4) Easily designed drive circuits. 5) Easy to use in parallel. •E x te rn a l dimensions (Units: mm) 2.9±0.2
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200mA)
2SK2731
SC-59
BL-5j
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96286B
Abstract: No abstract text available
Text: Transistors Digital transistors built-in resistors DTB113EK/DTB113ES •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1 ) B u ilt-in b ia s re s is to rs e n a b le th e 2 .9 ± 0 .2 DTB113EK co n fig u ra tio n o f an inverter c ircu it 11+0-2
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DTB113EK/DTB113ES
DTB113EK
SC-59
0Dlb713
O-220FN
O-220FN
O220FP
T0-220FP,
O-220FP.
7020c
96286B
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5490A
Abstract: B 1359 970-900 2SB798 2SD999 IEI-1213 MEI-1202 MF-1134 marking dk sot-89
Text: DATA SHEET • NEC SILICON TRANSISTOR 2SB798 PNP SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SB798 is designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package
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2SB798
2SD999
5490A
B 1359
970-900
2SD999
IEI-1213
MEI-1202
MF-1134
marking dk sot-89
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