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    Vishay Semiconductors VS-50MT060WHTAPBF

    IGBT MODULE 600V 114A 658W MTP
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    Vishay Intertechnologies VS-50MT060WHTAPBF

    Igbt Module, 600V, 114A, 658W; Continuous Collector Current:114A; Collector Emitter Saturation Voltage:3.2V; Power Dissipation:658W; Operating Temperature Max:150°C; Igbt Termination:Solder Pin; Collector Emitter Voltage Max:600V Rohs Compliant: Yes |Vishay VS-50MT060WHTAPBF
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    Newark VS-50MT060WHTAPBF Bulk 15
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    50MT060WHTAPB Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    thermistor ntc

    Abstract: E78996 bridge UPS circuit diagram pcb 50mt060whta 50MT060WHTAPB
    Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)


    Original     		PDF 50MT060WHTAPbF E78996 2002/95/EC 11-Mar-11 thermistor ntc E78996 bridge UPS circuit diagram pcb 50mt060whta 50MT060WHTAPB

    Untitled

    Abstract: No abstract text available
    Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)


    Original     		PDF 50MT060WHTAPbF E78996 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: 50MT060WHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery RoHS COMPLIANT • Very low conduction and switching losses


    Original     		PDF 50MT060WHTAPbF ULE78996 18-Jul-08

    94.468

    Abstract: No abstract text available
    Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)


    Original     		PDF 50MT060WHTAPbF E78996 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 94.468

    487 SMD DIODE

    Abstract: UPS circuit diagram pcb
    Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)


    Original     		PDF 50MT060WHTAPbF E78996 2002/95/EC 11-Mar-11 487 SMD DIODE UPS circuit diagram pcb

    50MT060WHTAPBF

    Abstract: E78996 datasheet bridge igbt h bridge application igbt "internal thermistor" E78996 bridge
    Text: 50MT060WHTAPbF Vishay High Power Products "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses • Optional SMD thermistor (NTC)


    Original     		PDF 50MT060WHTAPbF E78996 2002/95/EC 18-Jul-08 50MT060WHTAPBF E78996 datasheet bridge igbt h bridge application igbt "internal thermistor" E78996 bridge

    50mt060whtapbf

    Abstract: IR E78996
    Text: Bulletin I27228 09/06 50MT060WHTAPbF "HALF-BRIDGE" IGBT MTP Warp Speed IGBT Features • Gen. 4 Warp Speed IGBT Technology • HEXFRED TM Antiparallel Diodes with UltraSoft Reverse Recovery • Very Low Conduction and Switching Losses • Optional SMD Thermistor NTC


    Original     		PDF I27228 50MT060WHTAPbF E78996 12-Mar-07 50mt060whtapbf IR E78996

    Untitled

    Abstract: No abstract text available
    Text: VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors "Half Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses


    Original     		PDF VS-50MT060WHTAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    50MT060WHTAPBF

    Abstract: No abstract text available
    Text: 50MT060WHTAPbF Vishay High Power Products "Half-Bridge" IGBT MTP Warp Speed IGBT , 114 A FEATURES • Generation 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery RoHS COMPLIANT • Very low conduction and switching losses


    Original     		PDF 50MT060WHTAPbF ULE78996 18-Jul-08 50MT060WHTAPBF

    Untitled

    Abstract: No abstract text available
    Text: VS-50MT060WHTAPbF www.vishay.com Vishay Semiconductors “Half Bridge” IGBT MTP Warp Speed IGBT , 114 A FEATURES • Gen 4 warp speed IGBT technology • HEXFRED antiparallel diodes with ultrasoft reverse recovery • Very low conduction and switching losses


    Original     		PDF VS-50MT060WHTAPbF E78996 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRU1239SC

    Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
    Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK


    Original     		PDF 100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter

    TO-208AA

    Abstract: DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1
    Text: 2015-2012:QuarkCatalogTempNew 9/20/12 5:44 PM Page 2015 25 Diodes, Thyristors and Insulated Gate Bipolar Transistors IGBT 80-90 Amp RoHS DO-203AB (DO-5) INT-A-Pak VFM @ 25°C VRRM @ TC (°C) Package EACH 70079025 70078671 70078674 70078774 70078771 70078775


    Original     		PDF DO-204AR O-247AC DO-203AB 80SQ045 80EPS12PBF TO-208AA DO-203AB TO208AA scr 16RIA100 DO-205AA DO-8 diode 70HFR60 ST300C12C0 70HFR120 TO208AC scr 106-1