50N2 Search Results

50N2 Result Highlights (4)

Part	Manufacturer	Description
PTMA402050N2AZ	Texas Instruments	10W, 36V to 75V Input, 1500V Isolation, DC-DC Converter 6-Surface Mount Module -40 to 85
PTEA415050N2AD	Texas Instruments	1-OUTPUT 82.5W DC-DC REG PWR SUPPLY MODULE, LEAD FREE, PLASTIC, MODULE-8
PTMA402050N2AD	Texas Instruments	1-OUTPUT 10W DC-DC REG PWR SUPPLY MODULE, ROHS COMPLIANT, DIP-6
PTQA420050N2AD	Texas Instruments	1-OUTPUT 100W DC-DC REG PWR SUPPLY MODULE, ROHS COMPLIANT, DIP-8

50N2 Price and Stock

Filter by Manufacturer


Infineon Technologies AG BSC350N20NSFDATMA1 MOSFET N-CH 200V 35A TDSON-8-1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BSC350N20NSFDATMA1	Digi-Reel	2,362		1	1 $3.45 10 $2.397 100 $3.45 1000 $1.34124 10000 $1.32813	Buy Now
	BSC350N20NSFDATMA1	Cut Tape	2,362		1	1 $3.45 10 $2.397 100 $3.45 1000 $1.34124 10000 $1.32813	Buy Now
Avnet Americas	BSC350N20NSFDATMA1	Reel	5,000	16 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $1.28992	Buy Now
Newark	BSC350N20NSFDATMA1	Cut Tape	1,592		5	1 $3.28 10 $2.32 100 $1.76 1000 $1.44 10000 $1.44	Buy Now
Bristol Electronics	BSC350N20NSFDATMA1		894			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics	BSC350N20NSFDATMA1		5,000		1	1 $1.48 10 $1.48 100 $1.39 1000 $1.26 10000 $1.26	Buy Now

Chip One Stop	BSC350N20NSFDATMA1	Cut Tape	4,980	0 Weeks, 1 Days	1	1 $1.8 10 $1.57 100 $1.53 1000 $1.53 10000 $1.41	Buy Now
EBV Elektronik	BSC350N20NSFDATMA1			17 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	BSC350N20NSFDATMA1				5,000	1 - 10 - 100 - 1000 - 10000 $1.6758	Buy Now
Vyrian	BSC350N20NSFDATMA1		6,951			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Win Source Electronics	BSC350N20NSFDATMA1		20,000			1 - 10 - 100 $3.0208 1000 $2.7083 10000 $2.7083	Buy Now
Halo Electronics Inc TG110-S050N2LFTR ISO MOD 10/100 16P SMD T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TG110-S050N2LFTR	Reel	1,000		1,000	1 - 10 - 100 - 1000 $1.61493 10000 $1.50003	Buy Now
Mouser Electronics	TG110-S050N2LFTR		7,334			1 $4.6 10 $4.6 100 $1.96 1000 $1.36 10000 $1.23	Buy Now
Bristol Electronics	TG110-S050N2LFTR		252			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	TG110-S050N2LFTR			9 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IBS Electronics	TG110-S050N2LFTR				1,000	1 - 10 - 100 - 1000 $1.5029 10000 $1.5029	Buy Now

New Advantage Corporation	TG110-S050N2LFTR		2,000		1	1 - 10 - 100 - 1000 $1.61 10000 $1.51	Buy Now
Vyrian	TG110-S050N2LFTR		1,961			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Littelfuse Inc IXFH150N25X3 MOSFET N-CH 250V 150A TO247
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFH150N25X3	Tube	342		1	1 $17.94 10 $17.94 100 $11.162 1000 $17.94 10000 $17.94	Buy Now
Littelfuse Inc IXTA50N20P MOSFET N-CH 200V 50A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA50N20P	Tube	297		1	1 $5.14 10 $5.14 100 $5.14 1000 $2.30788 10000 $2.30788	Buy Now
Texas Instruments PTMA402050N2AD DC DC CONVERTER 5V 10W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	PTMA402050N2AD	Tray	255		1	1 $28.21 10 $28.21 100 $25.89133 1000 $25.89133 10000 $25.89133	Buy Now

Find more 50N2 price and stock on Findchips.com

50N2 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V ID25 = 50 A Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient	Original	50N20 O-247 O-204 O-247	PDF
IXTP50N20PM Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTP 50N20PM VDSS ID25 RDS on (Electrically Isolated Tab) = 200 V = 20 A ≤ 60 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Maximum Ratings OVERMOLDED TO-220 (IXTP.M) OUTLINE Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C	Original	50N20PM O-220 50N20P 02-16-06-E IXTP50N20PM	PDF
50N28T Abstract: 50N28 DS99378 50N2 ixTA50N28T Text: Advance Technical Information IXTQ 50N28T IXTA 50N28T IXTP 50N28T Trench Gate Power MOSFET VDSS ID25 = 280 V = 50 A Ω < 60 mΩ RDS on N-Channel Enhancement Mode For PDP drivers TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	50N28T O-220 O-263 50N28T 50N28 DS99378 50N2 ixTA50N28T	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Text: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B	PDF
d2s diode Abstract: IXTH50N20 Text: aixYS MegaMOS FET IXTH/IXTM 50N20 VDSS lD25 = 200 V = 50 A ^D S on = ^ N-Channel Enhancement Mode Maximum Ratings Symbol Test Conditions VDSS T j =25°C to150°C 200 V V oor T J = 25° C to 150° C; RQS= 1 Mi2 200 V Vos vt g s m Continuous +20 V Transient	OCR Scan	50N20 to150 O-247 T0-204 T0-204 O-247 IXTM50N20 d2s diode IXTH50N20	PDF
50N20P Abstract: 50n20 50n2 Text: PolarHTTM Power MOSFET IXTA 50N20P IXTP 50N20P IXTQ 50N20P VDSS ID25 = 200 V = 50 A ≤ 60 mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	50N20P O-220 50N20P 50n20 50n2	PDF
IXTN 36N50 C Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50 Text: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20	OCR Scan	O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50	PDF
50N20P Abstract: No abstract text available Text: PolarHTTM Power MOSFET IXTQ 50N20P IXTA 50N20P IXTP 50N20P = 200 V = 50 A Ω = 60 mΩ VDSS ID25 RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-3P (IXTQ) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	50N20P O-220 065B1 728B1 123B1 728B1 50N20P	PDF
40N25 Abstract: 100N45 60N652 0101T photron Text: CHIP SIZE mil wafer form chip form IR@VR (mA@V) 7,081 40x40 38.8+/-0.5 ≦0.2@23 ≦0.44@1 S40CT1 40N451 7,081 40x40 38.8+/-0.5 ≦0.2@43 ≦0.50@1 S40CT1 40N651 7,081 40x40 38.8+/-0.5 ≦0.2@63 ≦0.65@1 S40CT1 50N251 4,450 50x50 48.8+-/0.5 ≦0.2@23 ≦0.42@1	Original	40N251 40N451 40N651 50N251 50N451 60N252 60N452 60N652 66N253 66N453 40N25 100N45 0101T photron	PDF
42n20 Abstract: ixys ml 075 50N20 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083 Text: □IXYS IXFH 42N20 IXFM 42N20 HiPerFET Power MOSFETs IXFH 50N20 IXFM 50N20 IXFH/FM 42N20 IXFH/FM 50N20 IXFH 58N20 IXFH 58N20 V DSS ^D25 D DS on 200 V 200 V 200 V 42 A 50 A 58 A 60 mQ 45 m£2 40 mQ 200 ns 200 ns 200 ns N-Channel Enhancement Mode High dv/dt, Low t^, HDMOS™ Family	OCR Scan	42N20 50N20 50N20 58N20 ixys ml 075 15bs 3H DIODE smd A2075 58N20 D-68623 IXFH50N20S J083	PDF
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Text: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	O-247 O-251 O-204 O-264 15N60 20N60 15N70 01N80* 35N30 40N30 11n80 ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80	PDF
50n20 Abstract: 42N20 Text: MegaMOSTMFET IXTH 50N20 IXTM 50N20 VDSS = 200 V = 50 A ID25 Ω RDS on = 45 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 200 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 200 V VGS Continuous ±20 V VGSM Transient	Original	50N20 O-247 O-204 O-247 O-204 50n20 42N20	PDF
58N20 Abstract: IXFH58N20 50n20 Text: EUXYS VDSS HiPerFET Power MOSFETs IXFH/IXFT 50N20 IXFH 58N20 200 V 200 V Symbol Test Conditions Maximum Ratings VDSS T j =25°C to150°C 200 V V TCR Tj = 25° C to 150° C; RQS= 1 200 V Vos Continuous ±20 V v GSM Transient ±30 V 50 58 200 232 50 58 A	OCR Scan	50N20 58N20 to150 58N20 O-247 IXFH58N20	PDF
RAS 0510 SUN HOLD Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 Text: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.	Original	mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03	PDF

GE Power Management multilin SR 750 Abstract: GE multilin 750 GE multilin 750 relay relay GE multilin 760 multilin multilin 750 BS142 data sheet relay GE multilin 760 GE Power Management multilin SR 750 faults aeg power base 60 b Text: SR Feeder Management Relay 6 Complete, economical protection and monitoring of industrial and utility feeders. Features and Benefits Q Digital relay Q Tracks power system frequency Q Adjusts sampling rate to maintain accuracy Q Incorporates protection, control and	Original		PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Text: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original		PDF
1534F Abstract: 50n20 Text: IXTH/IXTM 42 N20 IXTH/IXTM 50 N20 MegaMOS FET V " dss ^D25 200 V 200 V 42 A 50 A D DS on 60 mi2 45 mQ N-Channel Enhancement Mode Symbol Test Conditions V ' DSS T, = 2S°C to 150°C V„GR T, = 25°C to 150°C; Po Maximum Ratings = 1 M£i 200 V 200 V Continuous	OCR Scan	42N20 50N20 50N20 O-247 O-204 O-247 1534F	PDF
mosfet 4400 Abstract: MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS Text: Power MOSFETs and MOSFET Modules N-Channel Enhancement-Mode HiPerFET Power MOSFETs Standard and MegaMO£ ™FETs HDMOS II Eliminates Tradeoffs The High Performance MOSFET family of Power MOSFETs is designed to provide superior dv/dt performance while eliminating the need for discrete,	OCR Scan	100N10 90N20 73N30 44N50 48N50 36N60 67N10 75N10 42N20 50N20 mosfet 4400 MOSFET 11N80 mosfet 20n60 7n80 20N60 mosfet 4800 mosfet mosfet 4800 circuit 4500 MOS	PDF
50N15 Abstract: TL 1074 CT megamos 46 08 09 6 megamos 48 ixth50n20 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet Text: IDE D I 4bfibE5b □ 0 0 D 3 b 5 0 \| I X Y S CORP — ~ r 73 f ^ / s / ^ □ I X Y S 50N20, 15 50N20, 15 MAXIMUM RATINGS Sym . IXTH50N15 IXTM 50N15 50N20 IXTM 50N 20 Drain-Source Voltage 1 Vd s s 150 200 Vdc Drain-Gate Voltage (R g s = 1-OMft) (1)	OCR Scan	IXTH50N15 IXTH50N20 IXTM50N15 IXTM50N20 00D3b5 IXTH50N20, IXTM50N20, 50-200V, 50N15 TL 1074 CT megamos 46 08 09 6 megamos 48 f g megamos 00D03 50N20 ID 48 Megamos a 1712 mosfet	PDF
Untitled Abstract: No abstract text available Text: 50N25M5 N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in D²PAK package Datasheet — production data Features Type VDSS RDS on max ID 50N25M5 250 V < 0.075 Ω 28 A • Amongst the best RDS(on)* area ■ High dv/dt capability ■ Excellent switching performance	Original	STB50N25M5	PDF
T7213 Abstract: No abstract text available Text: Preliminary Data Sheet January 1995 ' • -aa A T b T " m i * Microelectronics ATT2MD01 100VG/1 OBase-T MAC and EISA/ISA System Interface CMOS Integrated Circuit Features and Benefits ■ Supports the proposed IEEE* 802.12 100VGAnyLAN specification. — Enables 100 Mbits/s transmissions over	OCR Scan	ATT2MD01 100VG/1 100VGAnyLAN 10Base-T ATT2X01 100VG-AnyLAN 1995AT DS94-032LAN 005002ki T7213	PDF
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs VDSS N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFH/IXFM42N20 IXFH/IXFM/50N20 IXFH/IXFT58N20 ID25 200 V 200 V 200 V RDS on 42 A 60mW 50 A 45mW 58 A 40mW trr £ 200 ns TO-247 AD (IXFH) Symbol Test Conditions	Original	IXFH/IXFM42N20 IXFH/IXFM/IXFT50N20 IXFH/IXFT58N20 O-247 O-268 dv/00	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Text: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10A 52-14N01 52-16N01 55-12N 55-14N07 55-18N 60-08N 60-16N 62-08N 62-12N 40n80 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI	PDF
SMD diode N20 Abstract: IXFH58N20 30n20 Text: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2	OCR Scan	IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20	PDF

50N2 Search Results

50N2 Result Highlights (4)

50N2 Price and Stock

Infineon Technologies AG BSC350N20NSFDATMA1

Halo Electronics Inc TG110-S050N2LFTR

Littelfuse Inc IXFH150N25X3

Littelfuse Inc IXTA50N20P

Texas Instruments PTMA402050N2AD

50N2 Datasheets Context Search

Untitled

IXTP50N20PM

50N28T

75N1

d2s diode

50N20P

IXTN 36N50 C

50N20P

40N25

42n20

11n80

50n20

58N20

RAS 0510 SUN HOLD

GE Power Management multilin SR 750

IXTD08N100P-1A

1534F

mosfet 4400

50N15

Untitled

T7213

Untitled

40n80

SMD diode N20