k2624
Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Text: 作成 ：1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ
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5117405D
304-Word
MSM5117405D
SOJ26/24
300mil
SOJ26/24-P-300-1
MSM5117405D-xxSJ)
TSOPII26/24-P-300-1
MSM5117405D-xxTS-K)
k2624
D-50
MSM5117405
MSM5117405D
MSM5117405D-50
MSM5117405D-60
MSM5117405D-70
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SPT0305
Abstract: Q67100-Q1101 q67100-q1102 WCs MARKING SMD MARKING code ASC code marking rah
Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
405BJ-50/-60
405BJ/BT
P-TSOPII-26/24-1
GPX05857
SPT0305
Q67100-Q1101
q67100-q1102
WCs MARKING
SMD MARKING code ASC
code marking rah
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k2624
Abstract: D-50 MSM5117405 MSM5117405D MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Text: 作成 ：1999 年 1 月 電子デバイス M SM 5117405D 4,194,304-Word x 4-Bit DYNAMIC RAM : EDO 機 能 付 き 高 速 ペ ー ジ モ ー ド • 概要 5117405D はCMOS プロセス技術を用いた 4,194,304 ワードx4 ビット構成のダイナミックラ
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Original
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PDF
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5117405D
304-Word
MSM5117405D
SOJ26/24
300mil
SOJ26/24-P-300-1
MSM5117405D-xxSJ)
TSOPII26/24-P-300-1
MSM5117405D-xxTS-K)
k2624
D-50
MSM5117405
MSM5117405D
MSM5117405D-50
MSM5117405D-60
MSM5117405D-70
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marking wl3
Abstract: V53C517405A WL10 WL12 WL17
Text: MOSEL VITELIC V53C517405A 4M X 4 EDO PAGE MODE CMOS DYNAMIC RAM V53C517405A 50 60 Max. RAS Access Time, tRAC 50 ns 60 ns Max. Column Address Access Time, (tCAA) 25 ns 30 ns Min. Extended Data Out Page Mode Cycle Time, (tPC) 20 ns 25 ns Min. Read/Write Cycle Time, (tRC)
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V53C517405A
cycles/32
24/26-pin
marking wl3
V53C517405A
WL10
WL12
WL17
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hm5x1
Abstract: No abstract text available
Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi H M 5116405 Series, HM 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633
26-pin
ns/60
ns/70
hm5x1
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5117405
Abstract: No abstract text available
Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-633A Z Rev. 1.0 Oct. 14,1996 Description The Hitachi HM5116405 Series, H M 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word X 4-bit. They employ the m ost advanced CMOS technology for high performance and low power. The
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HM5116405
HM5117405
304-word
ADE-203-633A
26-pin
ns/70
5117405
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M5117405
Abstract: msm5117405a Q020G m51174
Text: O K I Semiconductor_ MSM5 1 174 05 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION T he M SM 5117405A is a4,194,304-word x 4-bit d yn am ic R A M fab ricated in O K I’s C M O S silico n gate technology. The M SM 5117405A ach ieves h ig h in teg ratio n , high-speed operatio n, and low -pow er
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MSM5117405A_
304-Word
MSM5117405A
26/24-pin
cycles/32
M5117405
Q020G
m51174
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Untitled
Abstract: No abstract text available
Text: SIEMENS HYB 5116405BJ/BT -50/-60/-70 HYB 5117405BJ/BT -50/-60/-70 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO P re lim in a ry In fo rm a tio n m ax. 6 6 0 m W a ctive • 4 194 3 0 4 w o rd s by 4 -b it o rg a n iz a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re
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THM324005BS
Abstract: No abstract text available
Text: TOSHIBA THM324005BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM 324005BS/BSG is a 4,194,304 w ords by 32 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem bled with 8 pcs of T C 5117405BSJ on the printed circuit board. This m odule is optimized for application to the systems which
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THM324005BS/BSG-60/70
324005BS/BSG
5117405BSJ
THMxxxxxx-60)
THMxxxxxx-70)
DM16020695
THM324005BS/BSG
08MAX.
324005BS
THM324005BS
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ’C operating temperature • Performance: -50 -60 -70 ÍRAC
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5116405BJ
5117405BJ
5116405BJ-50)
5116405BJ-60)
5116405BJ-70)
5117405BJ-50)
5117405BJ-60)
5117405BJ-70)
405BJ-50/-60/-70
85max
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thm3640*5
Abstract: No abstract text available
Text: TOSHIBA THM3640F5BS/BSG-60/70 PRELIMINARY 4,194,304 WORDS X 36 BIT EDO DYNAMIC RAM MODULE Description The TH M 3640F5BS/BSG is a 4,194,304 w ords by 36 bits Hyper Page M ode (EDO) dynamic RAM m odule which is assem bled with 8 pcs of TC 5117405BSJ and 1 pc of TC 5117445BSJ on the printed circuit board. This m odule is optimized for
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THM3640F5BS/BSG-60/70
3640F5BS/BSG
5117405BSJ
5117445BSJ
198mW
THMxxxxxx-60)
489mW
THM364QF5BS/BSG-60A70
DM16040595
THM3640F5BS/BSG
thm3640*5
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5117405BJ-50
Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
405BJ/BT
405BJ-50/-60
GPX05857
5117405BJ-50
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MSM5117405D
Abstract: MSM5117405D-50 MSM5117405D-60 MSM5117405D-70
Text: O K I Semiconductor T h is v e rs io n :A p r.1 999 M S M 5 1 1 7 4 0 5 P _ 4,194,304-W o rd x 4-B it D Y N A M IC RAM : FA ST PAGE M O D E T Y P E W ITH EDO D ESC R IP TIO N The M SM 5117405D is a 4,194,304-w ord x 4-bit dynam ic RA M fabricated in O ki’s silicon-gate CM OS
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7405D
304-Word
MSM5117405D
26/24-pin
es/32
MSM5117405D-50
MSM5117405D-60
MSM5117405D-70
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Untitled
Abstract: No abstract text available
Text: SIEMENS 4M x 4-Bit Dynamic RAM 2k & 4k-Refresh Hyper Page Mode- EDO HYB 5116405BJ -50/-60/-70 HYB 5117405BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 ^R A C
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5116405BJ
5117405BJ
5116405BJ-50)
5116405BJ-60)
5116405BJ-70)
fi23Sb05
405BJ-50/-60/-70
P-SOJ-26/24
BI24X
A535b05
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Untitled
Abstract: No abstract text available
Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Hyper Page Mode - EDO HYB 5116405BJ-50/-60 HYB 5117405BJ-50/-60 HYB 3116405BJ/BT(L)-50/-60 HYB 3117405BJ/BT-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature
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OCR Scan
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PDF
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5116405BJ-50/-60
5117405BJ-50/-60
3116405BJ/BT
3117405BJ/BT-50/-60
-5J-26/24-1
300mil)
405BJ-50/-60
405BJ/BT
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300mil-wide trays
Abstract: Q67100-Q2156 Q67100-Q2157
Text: SIEM EN S 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organization • Fast access and cycle tim e 50 ns access time 84 ns cycle tim e -50 version 60 ns access tim e 104 ns cycle tim e (-60 version)
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32-Bit
324025S/GS-50/-60
324025S/GS-50)
324025S/GS-60)
ModufiE35bD5
L-SIM-72-12
B235b05
300mil-wide trays
Q67100-Q2156
Q67100-Q2157
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MSM5117405
Abstract: MSM5117405B
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 5117405B achieves high integration, high-speed operation, and low-power
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E2G0039-17-41
MSM5117405B_
304-Word
MSM5117405B
26/24-pin
MSM5117405
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Untitled
Abstract: No abstract text available
Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM5116405 Series, 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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OCR Scan
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PDF
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HM5116405
HM5117405
304-word
ADE-203-633
26-pin
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5116405
Abstract: Nippon capacitors
Text: H B 5 6 E 8 3 6 / H B 5 6 E 4 3 6 S e r i e s HB56E836 32 MB Unbuffered EDO DRAM SIMM 8-Mword X 36-bit, 2 k Refresh, 2-Bank Module 16 pcs of 4 M X 4 and 8 pcs of 4 M x 1 Components HB56E436 16 MB Unbuffered EDO DRAM SIMM 4-Mword x 36-bit, 2 k Refresh, 1-Bank Module
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HB56E836
36-bit,
HB56E436
ADE-203-673A
16-Mbit
HM5117405)
HM514105)
5116405
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: HM5116405 Series 5117405 Series 4,194,304-word x 4-bit Dynamic RAM HITACHI ADE-203-633 C Z Rev. 3.0 Feb. 27, 1997 Description The Hitachi HM5116405 Series, 5117405 Series are CMOS dynamic RAMs organized 4,194,304-word x 4-bit. They employ the most advanced CMOS technology for high performance and low power. The
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OCR Scan
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PDF
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HM5116405
HM5117405
304-word
ADE-203-633
304-word
26-pin
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Untitled
Abstract: No abstract text available
Text: SIEMENS 8M X 32-Bit EDO-DRAM Module HYM328025S/GS-50/-60 Advanced Information • 8 388 608 words by 32-bit organization • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time 104 ns cycle time (-60 version) • Hyper page mode (EDO) capability
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OCR Scan
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32-Bit
HYM328025S/GS-50/-60
DD653tiS
328025S/GS-50/-60
fl235bD5
D0fl53bb
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als31c
Abstract: No abstract text available
Text: SIEMENS 4M X 32-Bit EDO-DRAM Module HYM 324025S/GS-50/-60 Advanced Information • 4 194 304 words by 32-bit organized SIMM modules for PC main memory applications • Fast access and cycle time 50 ns access time 84 ns cycle time -50 version 60 ns access time
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OCR Scan
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PDF
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32-Bit
324025S/GS-50/-60
324025S/GS-50)
324025S/GS-60)
0235fci05
L-SIM-72-12
111111iTTTTTTT
als31c
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27C256AG
Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series
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512kx8512k
28512A
674100H
671400H
8128B
1664H
9127H
8127H
27C256AG
4265C
514270
101AG
BK 4367
4165A
5118160
4270-D
4096A
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Untitled
Abstract: No abstract text available
Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70
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P-SOJ-26/20-5
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