2SC4450
Abstract: No abstract text available
Text: Ordering number:EN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .
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EN3101
2SC4450
500V/5mA
2010C
2SC4450]
O-220AB
SC-46
2SC4450
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PDF
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2SA1710
Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Text: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.
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Original
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ENN3097
2SA1710/2SC4490
VCEO300V)
2SA1710/2SC4490]
2SA1710
2SA1710
2SC4490
ITR04358
ITR04359
ITR04360
ITR04361
ITR04362
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PDF
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2SC4450
Abstract: ITR06957 ITR06958 ITR06959 ITR06960 ITR06961
Text: Ordering number:ENN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .
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Original
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ENN3101
2SC4450
500V/5mA
2010C
2SC4450]
O-220AB
2SC4450
ITR06957
ITR06958
ITR06959
ITR06960
ITR06961
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN3101 NPN Triple Diffused Planar Silicon Transistor 2SC4450 1500V/5mA High-Voltage Amplifier, High-Voltage Switching Applications Features Package Dimensions • High breakdown voltage. · Small Cob. · Wide ASO. · High reliability Adoption of HVP process .
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Original
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ENN3101
2SC4450
500V/5mA
2010C
2SC4450]
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PDF
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DCA015
Abstract: FC801
Text: Ordering number :EN3107A FC801 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features Package Dimensions • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.
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Original
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EN3107A
FC801
FC801
DCA015,
FC801]
DCA015
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PDF
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2SA1709
Abstract: No abstract text available
Text: Ordering number : EN3096A 2SA1709/2SC4489 Bipolar Transistor http://onsemi.com - 100V, (-)2A, Low VCE(sat), (PNP)NPN Single NMP Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity ( )2SA1709
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EN3096A
2SA1709/2SC4489
2SA1709
2SA1709
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PDF
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ICP30
Abstract: 2SA1709
Text: 2SA1709 / 2SC4489 Ordering number : EN3096A SANYO Semiconductors DATA SHEET 2SA1709/2SC4489 PNP/NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Features • • Adoption of FBET, MBIT processes Fast switching speed • High breakdown voltage, large current capacity
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2SA1709
2SC4489
EN3096A
2SA1709/2SC4489
2SA1709
ICP30
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PDF
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2SC3142
Abstract: FC120 marking 7T transistor
Text: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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Original
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EN3062A
FC120
FC120
2SC3142,
FC120]
2SC3142
marking 7T transistor
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PDF
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2SC3142
Abstract: FC120 marking 7T transistor
Text: Ordering number:EN3062A FC120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications Features Package Dimensions • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly.
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Original
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EN3062A
FC120
FC120
2SC3142,
FC120]
2SC3142
marking 7T transistor
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN2953 DD20R Diffused Junction Type Silicon Diode Damper Diode for Ultrahigh-Definition Display Applications Features Package Dimensions • High breakdown voltage VRRM : 1500V . · High reliability. · One-point fixing type plastic molded package
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EN2953
DD20R
DD20R]
O-220AB
SC-46
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PDF
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2sc4490
Abstract: 2SA1710 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Text: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.
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Original
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ENN3097
2SA1710/2SC4490
VCEO300V)
2SA1710/2SC4490]
2SA1710
2sc4490
2SA1710
ITR04358
ITR04359
ITR04360
ITR04361
ITR04362
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number :EN3107A FC801 Silicon Epitaxal Planar Diode Composite Diode for High-Speed Switching Applications Features Package Dimensions • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting efficiency greatly.
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Original
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EN3107A
FC801
FC801
DCA015,
FC801]
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PDF
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2SA1710
Abstract: No abstract text available
Text: Ordering number:EN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.
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Original
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EN3097
2SA1710/2SC4490
VCEO300V)
2SA1710/2SC4490]
2SA1710
2SA1710
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PDF
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2SA1709
Abstract: 2SC4489 ITR04340 ITR04341 ITR04342
Text: Ordering number:ENN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.
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Original
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ENN3096
2SA1709/2SC4489
2SA1709/2SC4489]
2SA1709
2SA1709
2SC4489
ITR04340
ITR04341
ITR04342
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PDF
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2SA1709
Abstract: No abstract text available
Text: Ordering number:EN3096 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1709/2SC4489 High-Voltage Switching Applications Features Package Dimensions • Adoption of FBET, MBIT processes. · High breakdown voltage, large current capacity. · Fast switching speed.
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Original
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EN3096
2SA1709/2SC4489
2SA1709/2SC4489]
2SA1709
2SA1709
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PDF
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2SA1710
Abstract: 2SC4490 ITR04358 ITR04359 ITR04360 ITR04361 ITR04362
Text: Ordering number:ENN3097 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1710/2SC4490 High-Definition CRT Display Video Output Applications Features Package Dimensions • High breakdown voltage VCEO≥300V . · Excellent high frequency characteristic. · Adoption of MBIT process.
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Original
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ENN3097
2SA1710/2SC4490
VCEO300V)
2SA1710/2SC4490]
2SA1710
2SA1710
2SC4490
ITR04358
ITR04359
ITR04360
ITR04361
ITR04362
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number: EN 3097 2SA1710/2SC4490 PNP/NPN Epitaxial Planar Silicon Transistors SAtVO High-Defmition CRT Display Video Output Applications '• iV V y ■' 1 I • Features ■High breakdown voltage V ceo — 300V ■ Excellent high frequency characteristic
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OCR Scan
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2SA1710/2SC4490
2SA1710
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PDF
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Untitled
Abstract: No abstract text available
Text: O rdering num ber: EN3101 _ 2SC4450 NPN Triple Diffused Planar Silicon Transistor 1500V/5mA High-Voltage Amp, High-Voltage Switching Applications F e a tu re s • High breakdown voltage • Small Cob • Wide ASO • High reliability Adoption of II VP process
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OCR Scan
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EN3101
2SC4450
500V/5mA
5169MO
G0SDS13
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PDF
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30621
Abstract: No abstract text available
Text: O rd e rin g n u m b e r: EN3Q62A FC 120 NPN Epitaxial Planar Silicon Composite Transistor High-Frequency General-Purpose Amp, Differential Amp Applications F e a tu re s • Composite type with 2 transistors contained in the CP package currently in use, improving the
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OCR Scan
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EN3Q62A
FC120
2SC3142,
30621
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PDF
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JC448
Abstract: 2SC1489 AFiB 2SA1709 A170 C448 C448S SA17
Text: Ordering num ber:EN 3096 2SA1709/2SC4489 No.3096 SAXYO PN P/N PN E pitaxial P lanar Silicon T ransistors High-Voltage Switching Applications F e a tu r e s •Adoption of FBET, MBIT processes • H igh breakdow n voltage, large cu rre n t capacity • F a st sw itching speed
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OCR Scan
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2SA1709/2SC4489
2SA1709
JC448
2SC1489
AFiB
2SA1709
A170
C448
C448S
SA17
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PDF
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EN3101
Abstract: 2SC4450
Text: Ordering number : EN3101 2SC4450 No.3101 NPN Triple Diffused Planar Silicon Transistor H igh-Voltage Sw itching Applications F e a tu re s •High breakdown voltage • Small c0b • Wide ASO • High reliability Adoption of IIVP process A bsolute M axim um R atings at Ta = 25°C
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OCR Scan
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EN3101
2SC4450
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PDF
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31Q7A
Abstract: sanyo AG
Text: O rd e rin g n u m b e r : EN 31Q7A ; _ F C 8 0 1 No.3107A Silicon Epitaxial Planar Type Composite Diode for H igh-Speed Sw itching Applications Features • Composite type with 4 diodes contained in the CP package currently in use, improving the mounting
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OCR Scan
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31Q7A
FC801
DCA015,
31Q7A
sanyo AG
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number:EN 3 0 9 6 _2SA1709/2SC4489 PNP/NPN Epitaxial P lanar Silicon Transistors High-Voltage Switching Applications J F e a tu re s •Adoption of FBET, MBIT processes • High breakdown voltage, large current capacity ■F ast switching speed
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OCR Scan
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2SA1709/2SC4489
2SA1709
5169MO
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PDF
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1211A
Abstract: 2953 DD20R 5169MO
Text: Ordering num ber :EN2953 SAmro i i No^953 I D D 2 OR Diffused Junction Type Silicon Diode Damper Diode for Very H igh-D efinition Display Applications F e a tu re s - High breakdown voltage Vrrm : “ 1500V - High reliability •One-point fixing type plastic molded package facilitating easy mounting and heat dissipation
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OCR Scan
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EN2953
DD20R
1211A
2953
DD20R
5169MO
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PDF
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