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    51V6 Search Results

    51V6 Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    RJE5918851V6N Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Cat6, THR, Standard Profile, Single Port, Shield With Top and Side EMI Tabs, With LEDs Visit Amphenol Communications Solutions
    RJE5818851V6N Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Cat5e, THR, Standard Profile, Single Port, Shield With Top and Side EMI Tabs, With LEDs Visit Amphenol Communications Solutions
    RJE6018851V6N Amphenol Communications Solutions Modular Jack - 8P8C, Right Angle, Cat6A, THR, Standard Profile, Single Port, Shield With Top and Side EMI Tabs, With LEDs Visit Amphenol Communications Solutions
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    51V6 Price and Stock

    ROHM Semiconductor MD51V65165E-50TAZ0AR

    IC DRAM 64MBIT PAR 50TSOP II
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    DigiKey MD51V65165E-50TAZ0AR Tray
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    TDK Corporation B72500T7151V60

    Var 14VAC 16VDC 150V 0603 SMD Cardboard T/R - Tape and Reel (Alt: B72500T7151V060)
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    Avnet Americas B72500T7151V60 Reel 14 Weeks 12,000
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    Avnet Abacus B72500T7151V60 13 Weeks 12,000
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    TDK Corporation B72500E7151V60

    Multilayer Varistor 14VAC/16VDC 5pF 1A 150V 0603 T/R - Tape and Reel (Alt: B72500E7151V060)
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    Avnet Americas B72500E7151V60 Reel 14 Weeks 8,000
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    TDK Corporation B72724A8151V62

    Var 14VAC 16VDC 1A 1206 SMD Blister T/R - Tape and Reel (Alt: B72724A8151V062)
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    Avnet Americas B72724A8151V62 Reel 14 Weeks 6,000
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    Mouser Electronics B72724A8151V62 1,497
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    Avnet Abacus B72724A8151V62 13 Weeks 6,000
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    United Chemi-Con Inc EKMZ451VSN681MR50S

    Aluminum Electrolytic Capacitors - Snap In 680uF 450V 20% 30X50
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    Mouser Electronics EKMZ451VSN681MR50S 304
    • 1 $14.56
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    51V6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CM C! Sem iconductor MSM 51V64805 E2G1015-17-42 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64805 is a 8,388,608-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64805 achieves high integration, high-speed operation, and low-power


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    PDF 51V64805 E2G1015-17-42 608-Word MSM51V64805 32-pin

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor E2G1013-17-43 M SM 51V64800_ 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The 51V64800is a 8388,608-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64800 achieves high integration, high-speed operation, and low-power


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    PDF 51V64800_ 608-Word E2G1013-17-43 MSM51V64800is MSM51V64800 32-pin

    S5400A

    Abstract: RO3035
    Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow


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    PDF V64400A V65400A 16Mx4, 128ms cycle/64ms) S5400A RO3035

    hy51v65804

    Abstract: No abstract text available
    Text: 51V65804, 51V64804 HYUNDAI 8M x 8-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 6 4 M bit d y n a m ic R A M o rg a n iz e d 8 ,3 8 8 .6 0 8 x 8 -b it c o n fig u ra tio n w ith E x te n d e d D ata


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    PDF HY51V65804, HY51V64804 64804JC 64804LJC 64804S HY51V64804TC HY51V64804SLTC 65804JC 65804LJC hy51v65804

    v64_5

    Abstract: 51V65400 HY51V65400
    Text: “HYUNDAI 51V64400, 51V65400 _16M x 4-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high


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    PDF HY51V64400, HY51V65400 HY51V64400JC HY51V64400LJC HY51V64400SLJC HY51V64400TC HY51V64400SLTC HY51V65400JC HY51V65400LJC v64_5 51V65400 HY51V65400

    Untitled

    Abstract: No abstract text available
    Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 |3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )


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    PDF 51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V65165 _ E 2 G 1 0 2 0 -1 7 -4 2 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V65165 is a 4,194304-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The 51V65165 achieves high integration, high-speed operation, and low-power


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    PDF MSM51 V65165 304-Word 16-Bit MSM51V65165 194304-word 50-pin

    MD51V64405

    Abstract: MD51V64405-50 MD51V64405-60
    Text: E2G0137-18-11 O K I Semiconductor Thisvereion:^ 1998 51V64405_ 16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO D ESC R IPTIO N The 51V64405 is a 16,777,216-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS


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    PDF E2G0137-18-11 MD51V64405 216-Word MD51V64405 32-pin MD51V64405-50 MD51V64405-60

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160


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    PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor 51V65800 E 2 G 1 0 1 4 -1 7 -4 3 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V65800 is a 8,388,608-word x 8-bit dynamic RAM fabricated in Oki's si!icon-gate CMOS technology. The 51V65800 achieves high integration, high-speed operation, and low-power


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    PDF MSM51V65800 608-Word MSM51V65800 32-pin cycles/64

    HY514260

    Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
    Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .


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    PDF HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616

    Untitled

    Abstract: No abstract text available
    Text: 51V65800, 51V64800 •HYUNDAI 8M x 8-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION T his fam ily is a 64M bit d yn a m ic RAM organized 8,388,608 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed


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    PDF HY51V65800, HY51V64800 HY51V64800JC HY51V64800LJC HY51V64800SLJC HY51V64800TC HY51V64800SLTC HY51V65800JC HY51V65800LJC

    Untitled

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM51 V64165 _ E 2 G 1 0 1 9 -1 7 -4 2 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64165 is a 4,194,304-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64165 achieves high integration, high-speed operation, and low-power


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    PDF MSM51 V64165 304-Word 16-Bit MSM51V64165 50-pin

    MSM51V64405

    Abstract: No abstract text available
    Text: O K I Semiconductor MSM5 1V64405_ E 2G 1011-17-42 16,777,216-Word x 4-Blt DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64405 is a 16,777,216-word x 4-bit dynamic RAM fabricated in Old's silicon-gate CMOS technology. The 51V64405 achieves high integration, high-speed operation, and low-power


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    PDF 1V64405_ 216-Word MSM51V64405 32-pin