Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    52506PE Search Results

    52506PE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: VEC2813 Ordering number : ENA0384 VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package


    Original
    VEC2813 ENA0384 A0384-6/6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6613 Ordering number : EN6920A SANYO Semiconductors DATA SHEET MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low


    Original
    EN6920A MCH6613 MCH6613 900mm2information PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6613 Ordering number : EN6920B SANYO Semiconductors DATA SHEET N-Channel and P-Channel Silicon MOSFET MCH6613 General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low


    Original
    EN6920B MCH6613 MCH6613 PW10s, 900movement, PDF

    diode sy 710

    Abstract: VEC2813 N1407
    Text: VEC2813 Ordering number : ENA0384B SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package


    Original
    VEC2813 ENA0384B A0384-6/6 diode sy 710 VEC2813 N1407 PDF

    70306

    Abstract: MCH6615 IT0251
    Text: MCH6615 Ordering number : EN6796A SANYO Semiconductors DATA SHEET MCH6615 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6615 incorporates two elements in the same package which are N-channel and P-channel low


    Original
    MCH6615 EN6796A MCH6615 70306 IT0251 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6606 Ordering number : EN6461A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original
    EN6461A MCH6606 900mm2 PDF

    IT0251

    Abstract: ta2909 MCH6614 TA-2909
    Text: MCH6614 注文コード No. N 6 7 9 5 A 三洋半導体データシート 半導体ニューズ No.N6795 をさしかえてください。 MCH6614 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


    Original
    MCH6614 N6795 900mm2 --200mA 900mm2 IT02517 IT02516 IT02518 IT0251 ta2909 MCH6614 TA-2909 PDF

    VEC2813

    Abstract: No abstract text available
    Text: VEC2813 注文コード No. N A 0 3 8 4 B 三洋半導体データシート 半導体データシート No.NA0384A をさしかえてください。 VEC2813 MOSFET : N チャネル MOS 型シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original
    VEC2813 NA0384A 900mm2 N0106 TC-00000299 52506PE TB-000002333 A0384-1/6 N1407 VEC2813 PDF

    MCH6618

    Abstract: TA-3264
    Text: MCH6618 注文コード No. N 6 9 7 3 A 三洋半導体データシート 半導体ニューズ No.N6973 をさしかえてください。 MCH6618 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


    Original
    MCH6618 N6973 900mm2 IT00113 IT00040 --10V --70mA 150mA 900mm2 MCH6618 TA-3264 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6604 Ordering number : EN6459B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6604 General-Purpose Switching Device Applications Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting


    Original
    MCH6604 EN6459B 900mm2Ã PDF

    MCH6606

    Abstract: IT00049
    Text: MCH6606 注文コード No. N 6 4 6 1 B 三洋半導体データシート 半導体データシート No.N6461A をさしかえてください。 MCH6606 N チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


    Original
    MCH6606 N6461A 900mm2 IT00052 900mm2 IT01731 IT01732 MCH6606 IT00049 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6459C MCH6604 N-Channel Power MOSFET http://onsemi.com 50V, 0.25A, 7.8Ω, Dual MCPH6 Features • • • • Low ON-resistance Ultrahigh-speed switching 1.5V drive Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting


    Original
    EN6459C MCH6604 PW10s, 900mm2 PDF

    MCH6613

    Abstract: PG 014 69-206
    Text: MCH6613 Ordering number : EN6920A SANYO Semiconductors DATA SHEET MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low


    Original
    MCH6613 EN6920A MCH6613 PG 014 69-206 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6606 Ordering number : EN6461A N-Channel Silicon MOSFET MCH6606 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original
    MCH6606 EN6461A PDF

    MCH6618

    Abstract: No abstract text available
    Text: MCH6618 Ordering number : EN6973A SANYO Semiconductors DATA SHEET MCH6618 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • Composite type with an N-channel and a P-channel MOSFET, allowing high-density mounting.


    Original
    MCH6618 EN6973A 900mm2 MCH6618 PDF

    MCH6604

    Abstract: No abstract text available
    Text: MCH6604 Ordering number : EN6459A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET MCH6604 General-Purpose Switching Device Applications Features • • • • Low ON-resistance. Ultrahigh-speed switching. 1.5V drive. Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.


    Original
    MCH6604 EN6459A MCH6604 PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : EN6920C MCH6613 Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting


    Original
    EN6920C MCH6613 MCH6613 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6613 Ordering number : EN6920A MCH6613 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.


    Original
    EN6920A MCH6613 MCH6613 900mm2 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCH6614 Ordering number : EN6795A MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting.


    Original
    MCH6614 EN6795A MCH6614 PDF

    MCH6613

    Abstract: No abstract text available
    Text: Ordering number : EN6920C MCH6613 Power MOSFET http://onsemi.com 30V, 0.35A, 3.7Ω –30V, –0.2A, 10.4Ω, Complementary Dual MCPH6 Features • • • The MCH6613 incorporates two elements in the same package which are N-channel and P-channel low ON resistance and high-speed switching MOSFETs, thereby enabling high-density mounting


    Original
    EN6920C MCH6613 MCH6613 PW10s, 900mm2 PDF

    MCH6614

    Abstract: TA-2909
    Text: MCH6614 Ordering number : EN6795A SANYO Semiconductors DATA SHEET MCH6614 N-Channel and P-Channel Silicon MOSFETs General-Purpose Switching Device Applications Features • • • The MCH6614 incorporates two elements in the same package which are N-channel and P-channel low


    Original
    MCH6614 EN6795A MCH6614 TA-2909 PDF

    69-206

    Abstract: MCH6613 TA-3241
    Text: MCH6613 注文コード No. N 6 9 2 0 A 三洋半導体データシート 半導体ニューズ No.N6920 をさしかえてください。 MCH6613 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


    Original
    MCH6613 N6920 900mm2 IT00040 --10V --100mA 900mm2 IT02878 IT02879 69-206 MCH6613 TA-3241 PDF

    IT0251

    Abstract: MCH6615 TA2910
    Text: MCH6615 注文コード No. N 6 7 9 6 A 三洋半導体データシート 半導体ニューズ No.N6796 をさしかえてください。 MCH6615 N チャネルおよび P チャネル MOS 型シリコン電界効果トランジスタ 汎用スイッチングデバイス


    Original
    MCH6615 N6796 900mm2 150mA 150mA, 10his 900mm2 IT02520 --10V IT0251 MCH6615 TA2910 PDF

    15A50

    Abstract: diode sy 710 VEC2813
    Text: VEC2813 Ordering number : ENA0384A SANYO Semiconductors DATA SHEET VEC2813 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package


    Original
    VEC2813 ENA0384A A0384-6/6 15A50 diode sy 710 VEC2813 PDF