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    5309T Search Results

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    5309T Price and Stock

    Microchip Technology Inc 1N5309-TR

    DIODE CUR REG 100V 3.3MA 500MW
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    DigiKey 1N5309-TR Reel 100
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    Ameya Holding Limited 1N5309-TR 119
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    Microchip Technology Inc CDLL5309-TR

    DIODE CUR REG 100V 500MW DO213AB
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    DigiKey CDLL5309-TR Reel 100
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    • 100 $21.92
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    onsemi HUF75309T3ST

    MOSFET N-CH 55V 3A SOT223-4
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    DigiKey HUF75309T3ST Reel 2,500
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    Rochester Electronics LLC HUFA75309T3ST

    MOSFET N-CH 55V 3A SOT223-4
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    DigiKey HUFA75309T3ST Bulk 807
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    onsemi HUFA75309T3ST

    MOSFET N-CH 55V 3A SOT223-4
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUFA75309T3ST Reel 2,500
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    5309T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :


    Original
    PDF 5309T 100US 5309T" MIL-STD-130. 824W170 824F036 755W002. 423F006

    Untitled

    Abstract: No abstract text available
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :


    Original
    PDF 5309T 100US 5309T" MIL-STD-130. QA0006 FORM0357 MC0023.

    FORM0357

    Abstract: MIL-STD-130
    Text: TITLE: SPECIFICATION CONTROL DRAWING PART IDENTIFIER: 5309T DESCRIPTION: HIGH POWER LOAD, BERYLLIA ASSEMBLY DWG: 1700494 1.0 SPECIFICATIONS: 1.1 ELECTRICAL: 1.1.1 RESISTANCE VALUE: 50Ω NOMINAL. 1.1.2 INPUT POWER: @ 100°C HEAT SINK, DERATED LINEARLY TO ZERO POWER AT 150°C :


    Original
    PDF 5309T 100US 5309T" MIL-STD-130. QA0006 FORM0357 MC0023. 08-E1008 MIL-STD-130

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    PDF IDT71V67703 IDT71V67903 IDT71V67703/7903 BG119 119BGS IDT71V67703 IDT71V67903 71V67903

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    PDF IDT71V67703 IDT71V67903 IDT71V67703/7903 119BGS IDT71V67703 IDT71V67903 71V67903

    71V67903

    Abstract: No abstract text available
    Text: 256K X 36, 512K X 18 Advance 3.3V Synchronous SRAMs Information 3.3V I/O, Burst Counter IDT71V67703 Flow-Through Outputs, Single Cycle Deselect IDT71V67903 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data


    Original
    PDF IDT71V67703 IDT71V67903 117MHz 100MHz 87MHz 100-pin BQ165 BG119 x4033 71V67903

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    PDF IDT71V67703 IDT71V67903 IDT71V67703/7903 119BGS IDT71V67703 IDT71V67903 71V67903

    71V67903

    Abstract: No abstract text available
    Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    PDF IDT71V67703 IDT71V67903 IDT71V67703/7903 BQ165 BG119 x4033 71V67903

    IDT71V67703

    Abstract: IDT71V67903 71V67903
    Text: 256K X 36, 512K X 18 Advance 3.3V Synchronous SRAMs Information 3.3V I/O, Burst Counter IDT71V67703 Flow-Through Outputs, Single Cycle Deselect IDT71V67903 Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data


    Original
    PDF IDT71V67703 IDT71V67903 IDT71V67703/7903 BQ165 BG119 x4033 IDT71V67703 IDT71V67903 71V67903

    71V67903

    Abstract: No abstract text available
    Text: 256K X 36, 512K X 18 IDT71V67703 3.3V Synchronous SRAMs IDT71V67903 3.3V I/O, Burst Counter Flow-Through Outputs, Single Cycle Deselect Features ◆ ◆ ◆ ◆ ◆ ◆ ◆ ◆ data, address and control registers. There are no registers in the data output path flow-through architecture . Internal logic allows the SRAM to


    Original
    PDF IDT71V67703 IDT71V67903 117MHz 100MHz 87MHz 100-pin BQ165 BG119 x4033 71V67903

    Untitled

    Abstract: No abstract text available
    Text: TERMINATIONS AND RESISTORS HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified


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    5309L

    Abstract: No abstract text available
    Text: HIGH POWER LOADS GENERAL SPECIFICATIONS: NOTES: Power Handling: Impedance: Element: Substrate: Top Plate: • Peak power is based on 100 microsecond pulse width and 1% duty cycle. Full power at 100°C heat sink 50Q nominal Thick film, unless otherwise specified


    OCR Scan
    PDF