TEFABLOC
Abstract: DIN 46320 DIN VDE 470, DIN EN 60529, IEC 529 pg21 cable gland BRASS 11x34 kerosine Santoprene 70 shore A 4220351 NBR 70
Text: Table of Contents Standard Straight-Through Polyamide PG, Metric, NPT . . . . . . . . . . . . . . . . . . .4 Standard Straight-Through Nickel-Plated Brass PG, Metric, NPT . . . . . . . . . . . . . . . . . . .5 Flathead and Multi Conductor Sealing Inserts . . . . . . . . . . . . . . . . . . . . .6
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C113307
TEFABLOC
DIN 46320
DIN VDE 470, DIN EN 60529, IEC 529
pg21 cable gland BRASS
11x34
kerosine
Santoprene 70 shore A
4220351
NBR 70
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tefabloc
Abstract: TEFABLOC to TEFABLOC *823
Text: Cable Gland / Industrial Multi-Conductor PG - Polyamide Material: • Body: Polyamide PA 6 25 % Glass-fiber Reinforced • Seal: Tefabloc Characteristics: • PG thread • Multi-holed seal inserts Technical properties: • Gas- and watertight • Completely twist protected
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TEFABLOC *823
Abstract: No abstract text available
Text: 30478_LTSR_2014_Final.qxp_LTSR_2014.QXD 2014-06-10 5:49 PM Page 10 Body Polyamide Applications: • Machines and devices • Measuring and control engineering • Plant installations Temperature Range -30 to 120°C -22 to 248°F Outer thread H E L Hole Hole
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Untitled
Abstract: No abstract text available
Text: LTSR_012010.QXD_LTSR_062006 b .QXD 12/20/12 1:42 PM Page 9 Cable Gland / Industrial Multi-Conductor (PG) - Polyamide Material: • Body: Polyamide PA 6 25 % Glass-fiber Reinforced • Seal: Tefabloc Characteristics: • PG thread • Multi-holed seal inserts
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PG5/29
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Santoprene 70 shore A
Abstract: poly aluminium ferric chloride 74249 TEFABLOC Ethanoic acid glucose meter application note poly aluminum chloride reagens TEFABLOC to 70042
Text: Use Cover File Liquid Tight Strain Reliefs Altech’s Liquid Tight Strain Reliefs provide cost effective solutions to your sealing applications. Altech offers the broadest range of strain reliefs that comply with national and international standards. This broad line
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m32x1.5 metric thread data
Abstract: No abstract text available
Text: 30478_LTSR_Cover_2014.qxp_Altech_LGCover2005.QXD 2014-06-17 4:40 PM Page 1 Altech Corporation 35 Royal Road Flemington, NJ 08822-6000 P 908.806.9400 • F 908.806.9490 www.altechcorp.com Altech Corp. 365-062014-3000 Printed June 2014 30478_LTSR_2014_Final.qxp_LTSR_2014.QXD 2014-06-10 5:48 PM Page 2
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LGCover2005
m32x1.5 metric thread data
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5213402
Abstract: 25X15 TEFABLOC *823 TEFABLOC 3800369 NW79 M32 cable gland TEFABLOC 178 40 A 5212 72173-1
Text: Table of Contents Standard Straight-Through Polyamide PG, Metric, NPT . . . . . . . . . . . . . . . . . . .4 Standard Straight-Through Nickel-Plated Brass PG, Metric, NPT . . . . . . . . . . . . . . . . . . .5 Industrial Polystyrene Straight-Through PG, Metric . . . . . . . . . . . . . . . . . . . . .6
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Untitled
Abstract: No abstract text available
Text: LTSR_012010.QXD_LTSR_062006 b .QXD 12/20/12 1:42 PM Page 3 Table of Contents Standard Straight-Through Polyamide PG, Metric, NPT . . . . . . . . . . . . . .4 Standard Straight-Through Nickel-Plated Brass PG, Metric, NPT . . . . . . . . . . . . . .5 Flathead and Multi Conductor
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Untitled
Abstract: No abstract text available
Text: TOS H IB A LOGIC/MEMORY 42E D • cJDc)75Ma □ Q 2 1 t12b Q ■ T0S2 16M BIT (1M WORD X 16 BIT/2M WORD x 8BIT) CMOS MASK ROM ■ » n » ' 7 ^ - / 3 -J P R E L IM IN A R Y The T C 5316200A P / A F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16
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OCR Scan
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316200A
600mil
42pin
100/vA(
150ns
TC5316200AP/AF--
IP42--P
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Untitled
Abstract: No abstract text available
Text: 16M BIT 1 M W O R D X 16 B IT /2 M W O R D X 8B IT CMOS MASK RO M PRELIMINARY DESCRIPTION T h e T C 5316200A P / A F is a 16,777,216 b its read only m em ory organized as 1,048,576 w ords by 16 b its w h e n BYTE is logical hig h , an d is organized a s 2,097,152 w ords by 8 b its w hen BYTE is logical
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OCR Scan
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TC5316200AP
TC5316200AP/
600mil
42pin
150ns
TC5316200AP
D1P42-P-600
D8-D15
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TC5716200D-150
Abstract: 5716200D
Text: TOSHIBA TC5716200D-150, -200 SILICON STACKED GATE CMOS 1,048,576 WORD x 16 BIT/2,097,152 WORD x 8 BIT CMOS UV ERASABLE AND ELECTRICALLY PROGRAMMABLE READ ONLY MEMORY D escription T heT C 5716200D is a 16,777,216 bit CMOS ultraviolet light erasable and electrically programmable read only memory. It is
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TC5716200D-150,
5716200D
TC5716200D
42-pin
150ns/200ns
60rrvV6
5716200D
TC5716200D.
TC5716200D-150
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Untitled
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - 5316200AP/AF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD x 8 B IT C M O S M A S K RO M DESCRIPTIO N T h e T C 5 3 1 6 2 0 0 A P / A F is a 1 6 ,7 7 7 ,2 1 6 b its r e a d o n ly m e m o ry o rg a n iz e d a s 1 ,0 4 8 ,5 7 6 w o rd s b y 1 6
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TC5316200AP/AF
A0-A19
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MB8316200
Abstract: uPD23C4000S TC533200 23C4000C UPD23C4000 23C32000a 624116 HN62318/338B
Text: MEMORY ICS FUNCTION GUIDE 3. CROSS REFERENCE GUIDE Density 4M bit 8M bit Samsung NEC Hitachi Sharp Toshiba Fujitsu K M 23C4000C UPD23C4001EB HN62344B LH534700 TC534000C M B834000A K M 23C4100C UPD23C4000S HN62444 LH534600B TC534200C M B834200A K M 23C 4; OOCET UPD23C4000S
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23C4000C
23C4100C
23C4200C
23V4000C
KM23V41
KM23V41OOCET
UPD23C4001EB
UPD23C4000S
HN62344B
HN62444
MB8316200
uPD23C4000S
TC533200
UPD23C4000
23C32000a
624116
HN62318/338B
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Untitled
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TC5716200D-150, -200-16 M E G A BIT 1,048,576 W O R D x 16 B IT / 2,097,152 W O R D X 8BIT C M O S U.V. ERA SA B LE A N D ELECTRICALLY PR O G R A M M A B L E R EA D O N LY M E M O R Y D ESCRIPTIO N
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TC5716200D-150,
5716200D
5716200D
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531620
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - 5316200BP/BF 16M BIT 1M W O R D x 16 B IT / 2 M W ORD 8 B IT C M O S M A S K R O M X D ESCRIPTIO N T h e T C 5 3 1 6 2 0 0 B P / B F is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16
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TC5316200BP/BF
A0-A19
531620
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Untitled
Abstract: No abstract text available
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT TENTATIVE 16M BIT 1M W O R D x 16 B 1 T /2 M WORD x 8 B IT CMOS M A S K ROM DESCRIPTION T h e T C 5 3 1 6 2 0 0 A F T is a 1 6 ,7 7 7 ,2 1 6 b its re a d on ly m em ory o rgan ize d a s 1 ,0 4 8 ,5 7 6 w ords by 16 b its
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OCR Scan
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316200A
TC5316200AFT
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Untitled
Abstract: No abstract text available
Text: w îîisaï iijlili 16M BIT 1 M W O RD x 16 B1T/2M W O RD x 8BIT CM O S M ASK ROM DESCRIPTION The 5316200P/F is a 16,777,216 bits read only memory organized as 1,048,576 words by 16 bits when BYTE is logical high, and is organized as 2,097,152 words by 8 bits, when BYTE is logical low.
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OCR Scan
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TC5316200P/F
600mil
42pin
TC5316200P/Fâ
DIP42â
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