555 databook
Abstract: LMC555CN LMC555H 555 timer 38 khz H08C LMC555 LMC555CH LMC555CM LMC555CMM M08A
Text: General Description The LMC555 is a CMOS version of the industry standard 555 series general purpose timers. It offers the same capability of generating accurate time delays and frequencies but with much lower power dissipation and supply current spikes. When operated as a one-shot, the time delay is precisely controlled by a single external resistor and capacitor.
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LMC555
ds008669
555 databook
LMC555CN
LMC555H
555 timer 38 khz
H08C
LMC555CH
LMC555CM
LMC555CMM
M08A
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H5TQ2G63BFR-H9C
Abstract: H5TQ1G83BFR-H9C H26M42001EFR H5RS1H23MFR h27u1g8f2b H27U1G8F2 H27UBG8T2A H27UBG8T H5MS2G22MFR-J3M H26M54001BKR
Text: Rev 0.0 Q2’2010 Databook C omputing Memory DDR3 SDRAM : Component VDD DENSITY ORG. SPEED PART NUMBER PKG. FEATURE AVAIL. 1.5V 1Gb 256Mx4 DDR3 1333 H5TQ1G43BFR-H9C FBGA 78ball 8Bank, 1.5V, CL9,9-9-9 Now H5TQ1G43TFR-H9C FBGA(78ball) 8Bank, 1.5V, CL9,9-9-9
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256Mx4
H5TQ1G43BFR-H9C
78ball)
H5TQ1G43TFR-H9C
H5TQ1G43BFR-G7C
H5TQ1G43TFR-G7C
H5TQ1G83BFR-H9C
H5TQ2G63BFR-H9C
H5TQ1G83BFR-H9C
H26M42001EFR
H5RS1H23MFR
h27u1g8f2b
H27U1G8F2
H27UBG8T2A
H27UBG8T
H5MS2G22MFR-J3M
H26M54001BKR
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pwm 555 timer mosfet driver
Abstract: voltage to frequency converter using ic 555 timer 555 timer for boost converter design of PROCESS CONTROL TIMER using 555 ic 555 TIMER IC HV809 Application Note AN-H36 lm 555 timer ic Full bridge converter 200 watt ,50 KHz voltage to frequency converter using ic 555 a to d converter using ic 555 timer
Text: HV809 EL Lamp Driver HV809 Application Note AN-H36 HV809 EL Lamp Driver for Battery Powered and Off-line Equipment by Roshanak Aflatouni, Applications Engineer and Scott Lynch, Senior Applications Engineer FIGURE 2: HV809 Lamp Driver Introduction HVIN The Supertex HV809 is designed to drive large lamps at high
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HV809
HV809
AN-H36
pwm 555 timer mosfet driver
voltage to frequency converter using ic 555 timer
555 timer for boost converter
design of PROCESS CONTROL TIMER using 555 ic
555 TIMER IC
HV809 Application Note AN-H36
lm 555 timer ic
Full bridge converter 200 watt ,50 KHz
voltage to frequency converter using ic 555
a to d converter using ic 555 timer
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pwm 555 timer mosfet driver
Abstract: 555 TIMER IC voltage to frequency converter using ic 555 timer a to d converter using ic 555 timer 555 timer for boost converter PHV 10W PWM USING IC 555 TIMER 200 watt ,50 KHz Full bridge converter resistance to frequency converter using ic 555 voltage to frequency converter using ic 555
Text: HV809 Application Note AN-H36 HV809 EL Lamp Driver for Battery Powered and Off-line Equipment by Roshanak Aflatouni, Applications Engineer and Scott Lynch, Senior Applications Engineer FIGURE 2: HV809 Lamp Driver Introduction HVIN The Supertex HV809 is designed to drive large lamps at high
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HV809
AN-H36
HV809
pwm 555 timer mosfet driver
555 TIMER IC
voltage to frequency converter using ic 555 timer
a to d converter using ic 555 timer
555 timer for boost converter
PHV 10W
PWM USING IC 555 TIMER
200 watt ,50 KHz Full bridge converter
resistance to frequency converter using ic 555
voltage to frequency converter using ic 555
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AD578
Abstract: AD578K AD578L AD578SD AD579
Text: a Very Fast, Complete 10- or 12-Bit A/D Converters AD578/AD579 FUNCTIONAL BLOCK DIAGRAM AD578 BIT 12 1 (AD578) 2 BIT 11 BIT 10 3 BIT 9 BIT 8 AD578/AD579 32 –15V 31 +15V 100⍀ 4 5 BIT 7 6 BIT 6 7 DAC FEATURES Complete 12-Bit ADC with Reference and Clock
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12-Bit
AD578/AD579
AD578)
AD579)
AD578
AD578K
AD578L
AD578SD
AD579
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AD578
Abstract: AD578K AD578L AD578SD AD579
Text: a FUNCTIONAL BLOCK DIAGRAM AD578 BIT 12 1 (AD578) 2 BIT 11 BIT 10 3 BIT 9 BIT 8 AD578/AD579 32 –15V 31 +15V 100⍀ 4 D/A CONVERTER FEATURES Complete 12-Bit A/D Converter with Reference and Clock Fast Conversion: 3 s Max Buried Zener Reference for Long-Term Stability and
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AD578)
AD578/AD579
12-Bit
AD579)
MIL-STD-883
AD578
AD578K
AD578L
AD578SD
AD579
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sine wave generator using ic 555
Abstract: PWM USING IC 555 TIMER ic1 555 pwm sinewave timing Ic4 555 voltage to pwm converter 555 pwm circuits using 555 pwm 555 timer mosfet driver 555 TIMER IC pwm controller flyback HV430
Text: HV430 Application Note AN-H42 HV430 Application Note 105 Volt RMS Ring Generator by Scott Lynch, Senior Applications Engineer Introduction Phones require at least 40VRMS for the proper detection of a ringing signal. Therefore, ringing amplitude at the phone company
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HV430
AN-H42
HV430
40VRMS
220pF
VN2224
BAS16
IRFR9214
sine wave generator using ic 555
PWM USING IC 555 TIMER
ic1 555
pwm sinewave timing
Ic4 555
voltage to pwm converter 555
pwm circuits using 555
pwm 555 timer mosfet driver
555 TIMER IC pwm controller flyback
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sine wave generator using ic 555
Abstract: pwm 555 timer mosfet driver PWM USING IC 555 TIMER ic1 555 HV430 dc pwm generator duty cycle ring SHOW IMAGE OF lm2903 IC 555 pwm mosfet pwm circuits using 555 555 TIMER IC pwm controller flyback
Text: HV430 Application Note AN-H42 HV430 Application Note 105 Volt RMS Ring Generator by Scott Lynch, Senior Applications Engineer Introduction Phones require at least 40VRMS for the proper detection of a ringing signal. Therefore, ringing amplitude at the phone company
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HV430
AN-H42
HV430
40VRMS
220pF
VN2224
BAS16
IRFR9214
sine wave generator using ic 555
pwm 555 timer mosfet driver
PWM USING IC 555 TIMER
ic1 555
dc pwm generator duty cycle ring
SHOW IMAGE OF lm2903 IC
555 pwm mosfet
pwm circuits using 555
555 TIMER IC pwm controller flyback
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Delay linear sweep generator using 555 timer
Abstract: uc3843 design guide UCN5821A equivalent UCQ5801A EL7272CN MIC29302BT led blinker using 555 timer mic4426cn MIC4426AJ MIC4426CM
Text: 1997 CD-ROM Quick Reference Micrel 1997 Databook Databook.pdf Designing with Low-Dropout Voltage Regulators (LDOBk.pdf) Designing PCMCIA Power Control (PCCardBk.pdf) Acrobat Reader copyright 1987–1996 Adobe Systems Incorporated. All rights reserved.
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MX-1610
Abstract: intel 28f200 db86082 mx1610 intel 80586 MX28F002 MXIC flash disk controller db86082b MX26C1000A KM29N32000
Text: APPLICATION NOTES 1. TYPICAL NONVOLATILE MEMORY APPLICATION 2.) ON-BOARD PROGRAMMING DESIGN CONSIDERATIONS FOR THE MX26C512A 3.) ON-BOARD PROGRAMMING OF THE MX26C1000A 4.) IN-CIRCUIT PROGRAMMING OF THE MX26C1024A 5.) 2M FLASH MEMORY 6.) 8M FLASH MEMORY 7.) MX25L4004A 4M-BIT 4MX1) CMOS SERIAL FLASH MEMORY
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MX26C512A
MX26C1000A
MX26C1024A
MX25L4004A
MX29F1610
MX26C512A,
512K-bit
MX26C512A
MX9691
MX-1610
intel 28f200
db86082
mx1610
intel 80586
MX28F002
MXIC flash disk controller
db86082b
MX26C1000A
KM29N32000
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555 databook
Abstract: FMC1718LN-02 "ku band" amplifier
Text: FMC1718LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)
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FMC1718LN-02
12dBm
FMC1718LN-02
555 databook
"ku band" amplifier
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njm074
Abstract: No abstract text available
Text: Automotive NJM074 QUAD J-FET INPUT OPERATIONAL AMPLIFIER • PACKAGE OUTLINE ■ FEATURES ● Operating Voltage ● J-FET Input ● High Input Resistance ● Low Input Bias Current ● High Slew Rate ● Wide Unity Gain Bandwidth ● Bipolar Technology ● Operating Temperature
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NJM074
NJM074V-Z
SSOP14
njm074
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Untitled
Abstract: No abstract text available
Text: FMCI 718LN-02 FUJITSU Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P-|<jB = 12dBm Typ. High Gain: G-ih r = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 17.7 ~ 18.7GHz Impedance Matched Zin/Zout = 50Q
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718LN-02
12dBm
FMC1718LN-02
-15dBm
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Untitled
Abstract: No abstract text available
Text: FLU17XM L - B an d M edium & High Power GaAs FETs ABSOLUTE MAXIMUM RATINGS Ambient Temperature Ta=25°C Hem Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 7.5 w °c °c Total Power Dissipation Tc = 25°C PT Storage Temperature
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FLU17XM
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Untitled
Abstract: No abstract text available
Text: FLC053WG C-Bcinci Power d a As FETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 3.75 w Total Power Dissipation pt Tc = 25°C Storage Temperature Tstg -65 t o +175
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FLC053WG
1000Q.
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Untitled
Abstract: No abstract text available
Text: FLM4450-HC Internally Matched Power GaAs / / : 7 s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage Vd S 15 V Gate-Source Voltage vgs -5 V 42.8 w Total Power Dissipation Pt Tc = 25°C Storage Temperature
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FLM4450-HC
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information applikation
Abstract: U2716C35 U214D30 U2732 V40511D K573P "information applikation" U2732C35 U555C 2732A INTEL
Text: m o G ^ ^ e le l^ t e n o r iîl-i Information Applikation i m f l k F a i ° o l B l H t 3 n a r Information Applikation HEFT =41 MOS-Speicher 3 - E PROM v o b h a lb le it o r w r f c f r a n k f u r c / o d a r im v b ko m b in at m jkro a W tt r onMi KAMMER DER TECHNIK
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Untitled
Abstract: No abstract text available
Text: FLM4450-8E Internally Matched Power GaAs l 'li i s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Symbol Hem Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage VGS -5 V 42.8 w °c °c Total Power Dissipation Tc = 25°C Pt Storage Temperature
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FLM4450-8E
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Untitled
Abstract: No abstract text available
Text: FLM1011-6F Internally M a tch ed Power GaAs l ETs ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 31.2 w Total Power Dissipation Tc = 25°C pt Storage Temperature
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FLM1011-6F
26dBm
24dBm
22dBm
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FLC053
Abstract: FLC053WG
Text: FLC053WG FUJITSU C-Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 9.0dB(Typ.) High PAE: r iadd = 38%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLC053WG is a power GaAs FET that is designed for general
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FLC053WG
FLC053WG
FLC053
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FLM4450-8C
Abstract: FLM4450-4C
Text: FLM4450-8C FUJITSU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39dBm Typ. High Gain: G ^ b = 10dB (Typ.) High PAE: riadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed Package
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FLM4450-8C
39dBm
FLM4450-4C
FLM4450-8C
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Untitled
Abstract: No abstract text available
Text: FLK052WG Film ali rU JIl X-Ku Band Power GaAs FETs FEATURES • • • • • High Output Power: P-|<jB = 27.0dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: = 32%(Typ.) Proven Reliability Hermetic Metal/Ceramic Package DESCRIPTION The FLK052WG is a power GaAs FET that is designed for general
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FLK052WG
FLK052WG
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AD578
Abstract: AD578K AD578L AD579 ad578ln
Text: ANALOG DEVICES FEATURES Performance Com plete 12-Bit A /D Converter w ith Reference and Clock Fast Conversion: 3 jjis max Buried Zener Reference for Long Term Stability and Low Gain T.C.: ± 3 0 ppm /°C max (AD578) ± 4 0 ppm /°C max (AD579) M ax Nonlinearity: < ± 0 .0 1 2 %
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12-Bit
AD578)
AD579)
MIL-STD-883
ad578/ad579
-IAD578)
AD578
AD578K
AD578L
AD579
ad578ln
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FLM4450-8C
Abstract: No abstract text available
Text: FLM4450-8C FI if m - i I I Internally Matched Power GaAs F E Ts FEATURES • High Output Power: P-idg = 39dBm Typ. • • • • • High Gain: G -j^B = 10dB (Typ.) High PAE: r iadd = 32% (Typ.) Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q
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FLM4450-8C
39dBm
FLM4450-4C
FLM4450-8C
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